• Korean Journal of Materials Research
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• v.14 no.11
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.109-113
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• 2013

ZnO thin films were synthesized on Si substrates by MOCVD using diethyl zinc as a precursor. Effects of $O_2$/DEZ gas mixing ratio on the growth rate, surface morphology, preferred orientation, and electrical properties of the ZnO thin films were investigated with SEM, XRD, and Hall measurement. The surface reflectance variations of ZnO thin films were analyzed using laser-photometer apparatus. As the $O_2$/DEZ mixing ratio increased, growth rate and $I_{(002)}/I_{(101)}$ in XRD of ZnO thin films decreased, and the crystal structure was changed from columnar to planar structure. All ZnO films deposited at various CVD conditions exhibited c-axis (002) plane preferred orientation. The electrical properties of ZnO thin films mainly depended on the carrier mobility.

• Journal of the Korean Society for Heat Treatment
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• v.9 no.1
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• pp.19-26
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• 1996

Melt-quenching of steels leads to various metallographic effects such as refinement of grain size, extension of the solid solubility of carbon and alloying elements, and is expected to improve the mechanical properties of conventional steels. Furthermore, this technique is a useful method for producing sheet directly from liquid state. And it will lend itself to development as a continuous cast process which offers significant savings in energy and product costs. The purpose of this study is to present the microstructures of melt-quenched austenitic stainless steels. As the results of this study, the morphology of melt-quenched microstructure show that the roll contact area is columnar structure, and the free surface area is dendrite structure. As the line speed increases, the ratio of $d_{colunnar}/d_{total}$ increases from 0.12 to 0.60, but the ribbon thickness decreases from $150{\mu}m$ to $30{\mu}m$.

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.258-261
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• 2007

Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.29-34
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• 2008

In this paper, the DE(double erosion) cathode for the reactive magnetron sputtering system is developed for high deposition rate and high target utilization efficiency. The utilization efficiency of the developed DE cathode is 22% higher than that of normal SE(single erosion) cathode. Sputtering process for the nickel oxide thin films with the DE cathode is performed under the following conditions; power with $1kW{\sim}3kW$, pressure with 4mtorr and 8mtorr, oxygen flow ratio with $0%{\sim}80%$. As a result, the hysteresis phenomenon of discharge voltage in 4mtorr is lower than that in 8mtorr and the hysteresis phenomenon of discharge voltage is getting lower as the applied power is getting higher. The structure of cross section and surface roughness of the thin films are observed by FE-SEM and AFM. The structure of cross section of the thin films is columnar and the average surface roughness under oxygen flow ratio of 0%, 52.5% and 65.0% are $2.08{\AA}$, $2.20{\AA}$ and $0.854{\AA}$, respectively.

• Animal cells and systems
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• v.6 no.4
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• pp.327-333
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• 2002

Among the silk glands in the black widow spider Latrodectus mactans, the ampullate one is the most predominant gland in both sexes, and is com-posed of three functional parts - excretory duct, storage ampulla and convoluted tail regions. This experiment was performed using mechanical pulling stimulation with electric motor equipment to reveal a correlation between silk usage and silk producing system in this poisonous spider. The mature secretory products in glandular epithelium are closely packed and appear as electron-opaque spherical vesicles. A part of the vesicles with fine fibrillar paracrystalline texture seems to store some proteins which will function at the time of final assembly into fibrils. Most of the secretory silk products which originated from the rough endoplasmic reticula of the glandular epithelial cells are grown by fusion with surrounding small vesi-cles. However, the Golgi complex does not seem to play an important role in this process of secretion. According to progressive maturation of secre-tory silk product, these granules are progressively filled with a fine fibrillar material, and thus appear much more electron-dense than those of earlier states. When the secretory product is extruded from the glandular cavity, the epithelium is rapidly changed to a thinner layer of tall columnar cells with less definitive cell membranes. After extruding there ave a few secre-tory droplets within these cells, thus causing this region to stain much lighter.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.276-281
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• 2000

Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.341-345
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• 2002

The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.32-38
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• 1994

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pt superlattice thin films. The samples were prepared by dc magnetron sputtering. Sputtrering Ar gas pressure was varied from 2 to 30 mTorr. The microstructure of the samples was examined by scanning electron microscope and the x-ray diffractometry. The magnetization, the Kerr rotation angle, and the reflectivity of the samples were measured. The columnar structure was developed, and the coercivity was drasti- cally increased, when the sputtering Ar gas pressure was higher than 20 mTorr. We explained that the variation of the magnetization, the Kerr rotation angle, and the reflectivity was related with the microstructure influenced by the variation of the Ar gas pressure.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.8
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• pp.721-724
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• 2016

Because of the inherent uncertainties caused by the manufacturing process variations, future loading conditions, and incomplete damage models, the lifetimes of mechanical structures under field conditions are significantly different from the results obtained in the laboratories. In this study, a dual sensor was developed to prognosticate the fatigue failure of structures under these uncertain conditions, and its effectiveness was demonstrated on a rectangular columnar structure under repeated uni-axial loading. The dual sensor is a slightly weaker structure embedded in the target structure, so that failure occurs in the sensor earlier than in the target structure. From the signal differences in the strain gauges in the embedded dual sensor, it is possible to differentiate between the normal status and warning status, even under variable loads.