• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.12
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• pp.2439-2447
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• 1994

In this paper, We analyze Colpitts type voltage contrqlled oscillator(VCO) used in personal handheld phone using a nonlinear analysis with third-order model. The resul shows the non-exponentially decaying shifting bias superimposed on the oscillator output which is different with the exponentially decaying shifting bias from the linear analysis. The stable oscillation criterion during a frequency change in a design of VOC can be also determined using proposed non-linear analysis. The theory is confirmed using PSPICE simulation and the experimental result of GaAs VCO matched very well with the theory.

• Journal of electromagnetic engineering and science
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• v.16 no.4
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• pp.229-231
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• 2016

A 180-GHz signal source based on a 65-nm CMOS technology has been developed in this study. The 180-GHz signal source consists of a 90-GHz fundamental-mode Colpitts oscillator and a 180-GHz frequency doubler. A coupled-line is employed to couple two oscillator cores for generating a differential signal, which is delivered to the input of the differential-mode doubler. The fabricated signal source operates from 181.2 to 182.4 GHz with output power varying from -15.3 to -10.8 dBm. The peak output power was -10.53 dBm at 181.3 GHz with a DC power consumption of 42 mW, and the associated phase noise was -71 dBc/Hz at 1 MHz offset.

• Journal of the Korea Society of Computer and Information
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• v.7 no.3
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• pp.109-114
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• 2002

This thesis analysed the characteristics of the performance degradation due to the bias resistance on the existing Colpitts VCO and Proposed the new structure of bias which removed the effect of bias resister to degrade the performance of oscillator. Also, we designed and implemented the high efficiency and low power VCO for International Mobile Telecommunication by using this technique.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1104-1112
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• 2013

This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1~7.5 dBm and the startup time of less than 2 nsec.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.7A
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• pp.935-942
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• 2000

In this paper, miniature voltage-controlled oscillator(VCO) for 1.6GHz PCS band is designed and implemented. Colpitts type LC resonating oscillator is designed with multilayer PCB and circuit parameters are optimized using the circuit simulator. Using the optimized design parameters, miniature VCO with 6X6X1.8mm3 (0.065cc)dimensions is fabricated and experimented. Developed VCO has -1.67dBm $\pm$0.5dBm output power level in52.5MHz tunung range, and has -99.33dBc/Hz phase noise performance at 10 KHz frequency offset.

• Journal of electromagnetic engineering and science
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• v.17 no.2
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• pp.98-104
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• 2017

This work describes the development and comparison of two phase-locked loops (PLLs) based on a 65-nm CMOS technology. The PLLs incorporate two different topologies for the output voltage-controlled oscillator (VCO): LC cross-coupled and differential Colpitts. The measured locking ranges of the LC cross-coupled VCO-based phase-locked loop (PLL1) and the Colpitts VCO-based phase-locked loop (PLL2) are 119.84-122.61 GHz and 126.53-129.29 GHz, respectively. Th e output powers of PLL1 and PLL2 are -8.6 dBm and -10.5 dBm with DC power consumptions of 127.3 mW and 142.8 mW, respectively. Th e measured phase noise of PLL1 is -59.2 at 10 kHz offset and -104.5 at 10 MHz offset, and the phase noise of PLL2 is -60.9 dBc/Hz at 10 kHz offset and -104.4 dBc/Hz at 10 MHz offset. The chip sizes are $1,080{\mu}m{\times}760{\mu}m$ (PLL1) and $1,100{\mu}m{\times}800{\mu}m$ (PLL2), including the probing pads.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.260-260
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• 2006

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.6
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• pp.1037-1044
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• 2019

This study describes injection locking phenomena for multi-frequency generator design. For the design of the multi-frequency generator, we describe the basic theory of injection locking phenomenon and conduct a single injection locking experiment based on it. The experiments was conducted by applying injection signals that vibrates consistently to oscillators which vibrates unstablely compared to injection signals. Injection signal was applied using a Howland current source and circuit was designed using a Colpitts oscillator. The results of the experiment showed that each oscillator oscillates reliable when injection signals(840kHz, 500kHz) are injected. Through the results of a single injection locking experiment, it is confirmed that injection locking phenomena can be applied in the design of the multi-frequency generator.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.29-34
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• 2015

This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.