• 제목/요약/키워드: Coating film

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Structural Analysis Comparison of Continuous Casting Mold (연속주조 몰드의 구조해석 비교)

  • 원종진;이종선;홍석주;이현곤
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2000.10a
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    • pp.181-187
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    • 2000
  • This study is object to structural analysis comparison of continuous casting mold. A two-dimensional finite element model was developed to compute the temperature distribution, thermal stress and thermal strain behavior for continuous casting mold. For structural analysis using thermal analysis result from ANSYS. In other to structural analysis of continuous casting mold, many variables such as casting speed, cooling condition, film coefficient, convection and load condition are considered.

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Thermal Analysis Comparison of Continuous Casting Mold (연속주조 몰드의 열해석 비교)

  • 원종진;이종선;윤희중;이현곤
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2000.10a
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    • pp.200-205
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    • 2000
  • This study is object to thermal analysis comparison of continuous casting mold. A two-dimensional transient finite element model was developed to compute the temperature distribution for continuous casting mold. For thermal analysis using analysis result from ANSYS. In other to thermal analysis of continuous casting mold, many variables such as casting speed, cooling condition, film coefficient, convection and load condition are considered.

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Changes in Quality of Pine Nuts (Pinus koraiensis) and Walnuts (Juglans regia) Coated with Protein Film Containing Green Tea Extract during Storage (녹차 추출물을 함유한 단백질 필름으로 코팅한 잣(Pinus koraiensis)과 호두(Juglans regia)의 저장 중 품질 변화)

  • Lee, Myoung-Suk;Lee, Se-Hee;Park, Sang-Kyu;Bae, Dong-Ho;Ha, Sang-Do;Song, Kyung-Bin
    • Korean Journal of Food Science and Technology
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    • v.36 no.5
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    • pp.842-846
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    • 2004
  • To elucidate quality changes of pine nuts and walnuts coated with green tea extract-containing protein film during storage, pine nuts and walnuts were coated with soy protein isolate (SPI) and zein film containing green tea extract, and stored at $35^{\circ}C$ for 4 weeks. During storage, peroxide, acid, and 2-thiobarbituric acid (TBA) values increased with increasing storage time regardless of treatments. Degrees of lipid oxidation were lowest in protein coating containing green tea extract, followed by protein coating and control. After 4 weeks, for pine nuts, 40, 32, and 21% of peroxide, acid, and TBA values respectively decreased by treatment of zein film coating containing green tea extract compared with control. For walnuts, 29, 24, and 21% of peroxide, acid, and TBA values respectively decreased. With SPI film coating, 41, 36, and 8% of peroxide, acid, and TBA values of pine nuts respectively decreased. For walnuts, 26, 28, and 5% of peroxide, acid, and TBA values respectively decreased by treatment of SPI film coating containing green tea extract.

A Novel Atomic Layer Deposited Al2O3 Film with Diluted NH4OH for High-Efficient c-Si Solar Cell

  • Oh, Sung-Kwen;Shin, Hong-Sik;Jeong, Kwang-Seok;Li, Meng;Lee, Horyeong;Han, Kyumin;Lee, Yongwoo;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.40-47
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    • 2014
  • In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

Application of CBD Zinc Sulfide (ZnS) Film to Low Cost Antireflection Coating on Large Area Industrial Silicon Solar Cell

  • U. Gangopadhyay;Kim, Kyung-Hea;S.K. Dhungel;D. Mangalaraj;Park, J.H.;J. Yi
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.1
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    • pp.1-6
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    • 2004
  • Zinc sulfide is a semiconductor with wide band gap and high refractive index and hence promising material to be used as ARC on commercial silicon solar cells. Uniform deposition of zinc sulfide (ZnS) by using chemical bath deposition (CBD) method over a large area of silicon surface is an emerging field of research because ZnS film can be used as a low cost antireflection coating (ARC). The main problem of the CBD bath process is the huge amount of precipitation that occurs during heterogeneous reaction leading to hamper the rate of deposition as well as uniformity and chemical stoichiometry of deposited film. Molar concentration of thiorea plays an important role in varying the percentage of reflectance and refractive index of as-deposited CBD ZnS film. Desirable rate of film deposition (19.6 ${\AA}$ / min), film uniformity (Std. dev. < 1.8), high value of refractive index (2.35), low reflectance (0.655) have been achieved with proper optimization of ZnS bath. Decrease in refractive index of CBD ZnS film due to high temperature treatment in air ambiance has been pointed out in this paper. Solar cells of conversion efficiency 13.8 % have been successfully achieved with a large area (103 mm ${\times}$ 103 mm) mono-crystalline silicon wafers by using CBD ZnS antireflection coating in this modified approach.

Tribological properties of DLC films on polymers

  • Hashizume, T.;Miyake, S.;Watanabe, S.;Sato, M.
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.175-176
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    • 2002
  • Our study is to search for tribological properties of diamond-like carbon (DLC) films as known as anti- wear hard thin film on various polymers. This report deals with the deposition of DLC films on various polymer substrates in vacuum by magnetron radio frequency (RF) sputtering method with using argon plasma and graphite, titanium target. The properties of friction and wear are measured using a ball-on-disk wear -testing machine. The properties of friction and wear have been remarkably improved by DLC coating. Moreover the composition of DLC films has been analyzed by using auger electron spectroscopy(AES). The wear rate of titanium-containing DLC film is lower than that of no-metal-containing DLC film.

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The Dielectric Characteristics of BST Thin Film Devices (BST 박막 소자의 유전특성)

  • 홍경진;민용기;신훈규;조재철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.660-663
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    • 2001
  • The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

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Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

  • Dao, Tung Duy;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.35 no.11
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    • pp.3299-3302
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    • 2014
  • The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

Development of thin film getters for field emission display

  • Yoon, Young-Joon;Kim, Kyoung chan;Baik, Hong-Koo;Lee, Sung-Man
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.1
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    • pp.74-78
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    • 1999
  • For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

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