• Korean Chemical Engineering Research
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• 제57권2호
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• pp.177-184
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• 2019

Methyltrimethoxysilane (MTMS)과 trimethylethoxysilane (TMES)을 전구체로 사용하여 비 불소계 발수 코팅 용액을 제조하였다. 이 코팅 용액을 냉연 강판 위에 스핀 코팅하고 열 경화시켜 발수 코팅 도막을 제조 하였다. 이 과정 중 코팅 도막의 소수성에 미치는 TMES/MTMS의 몰 비 영향이 연구되었다. 코팅 도막의 소수성은 접촉각 측정, 표면 형상 분석 및 적외선 분광법을 사용하여 연구되었다. TMES/MTMS의 몰 비를 0에서 30까지 변화 시켰을 때, 코팅되지 않은 냉연강판의 접촉각은 $30^{\circ}$인 반면에 TMES/MTMS의 몰 비가 1인 경우는 접촉각이 $104^{\circ}$로 크게 증가하여 발수성이 향상되었다. 또한 TMES/MTMS의 몰 비가 10, 15, 25, 30인 경우는 각각 접촉각이 $109^{\circ}$, $114^{\circ}$, $117^{\circ}$, $144^{\circ}$로 TMES/MTMS의 몰 비가 증가할수록 냉연강판의 접촉각이 점차 증가하는 경향을 보였다. 이때 코팅 도막의 소수성은 표면 거칠기의 증가와 코팅 표면에서의 메틸 성분의 함량 증가로 인해 향상되었다. 특히 TMES/MTMS의 몰 비가 30인 경우에는 TMES의 메틸기로 인한 발수성뿐만 아니라 표면 입자의 존재로 인해 전체적인 표면 거칠기가 크게 증가하였기 때문에 $144^{\circ}$의 초발수성을 나타내었다.

• 한국재료학회지
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• 제12권3호
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• Korean Chemical Engineering Research
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• 제46권2호
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• pp.310-315
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• 2008

실란커플링제인 glycidoxypropyl trimethoxysilane(GPTMS)과 vinyltriethoxysilane(VTES)을 출발물질로 하여 sol-gel 법에 의해 유-무기 혼성 용액을 제조하였다. 이 용액에 spiropyran계 광 변색 염료를 ethylacetate에 용해시킨 용액을 혼합하여 광 변색 코팅 용액을 제조하였다. 그 후 기재인 polycarbonate 시트에 스핀 코팅 시키고 $100^{\circ}C$에서 2 h 동안 열 경화시켜 광 변색성을 갖는 하드 코팅 막을 제조하였다. 코팅 막은 UV 광을 조사함에 의해 투명색으로부터 푸른색으로 변했다가 다시 투명색으로 변하는 가역적인 색변화를 보여주었다. 이때 코팅 막의 소색속도 및 연필경도는 코팅 용액 중의 GPTMS의 mol비가 증가됨에 따라 증가하였다.

• Korean Chemical Engineering Research
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• 제53권6호
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• pp.776-782
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• 2015

$TiO_2$ 나노입자의 광촉매 반응을 억제하기 위해 평균 직경 3~5 nm의 $TiO_2-SnO_2$ 나노입자가 titanium tetraisopropoxide(TTIP)와 tin chloride의 가수분해 반응에 의해 합성되었다. 생성된 $TiO_2-SnO_2$ 나노입자를 졸-겔법에 의해 3-glycidoxypropyl trimethoxysilane(GPTMS)과 반응시킴에 의해 유-무기 혼성 코팅 용액이 제조되었다. 그 후 코팅 용액을 기재인 polycarbonate(PC) 시트 위에 스핀 코팅시키고, $120^{\circ}C$에서 열경화 시켜 고굴절률 하드코팅 도막이 제조되었다. $TiO_2-SnO_2$ 나노입자로부터의 코팅 도막은 $TiO_2$ 나노입자로부터 얻어진 코팅 도막의 2H에 비해 증가된 3H의 연필경도를 보였다. 또한 $TiO_2-SnO_2$ 나노입자로부터의 코팅 도막의 굴절률은 Sn/Ti 몰 비가 0에서 0.5로 증가함에 따라 633 nm 파장에서 1.543으로부터 1.623으로 향상되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.429-433
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• 2006

PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.665-668
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• 1999

Thin films of Pb(Zr,Ti)O$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[ $\mu$ C/$\textrm{cm}^2$], 13.7[ $\mu$ C/$\textrm{cm}^2$], 55.6(kV/cm), 786 and 6.4(%) respectively.

• Environmental Engineering Research
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• 제19권3호
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• pp.255-259
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• 2014

In this research, we compared the COD removal efficiencies of titanium dioxide ($TiO_2$) thin films coated on the surfaces of borosilicate glass that prepared by three different numbers of coating layer; i) 3 layers ii) 4 layers and iii) 5 layers by sol-gel method. All of the prepared $TiO_2$ thin films consisted of pure anatase crystalline structure with grain sizes in the range 20-250 nm. The calculated optical band gaps of the $TiO_2$ thin films were 3.24. The total apparent surface area per total weight of $TiO_2$ thin films were 4.74, 3.86 and $2.79m^2g^{-1}$ for 3, 4 and 5 layers coating, respectively. The kinetics of the photodegradation reactions of COD under UVA light source were described by the Langmuir-Hinshelwood (L-H) kinetic model. The specific rates of the photodegradation of $TiO_2$ thin films at 3 layers coating was $1.40{\times}10^{-4}min^{-1}mW^{-1}$, while for the 4 layers coating and the 5 layers coating were $1.50{\times}10^{-4}$ and $4.60{\times}10^{-4}min^{-1}mW^{-1}$, respectively. The photocatalytic performance of COD degradation was higher with smaller grain size, higher surface area and narrow optical band gaps. Moreover, the numbers of coating layer on substrate also have great influence for kinetic of COD removal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.179-179
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• 2009

For the deposition of the semiconductor nanocrystals or quantum dots, it is required to have the substrates with smooth surface roughness. Slot-die coating method wad adopted and optimized varying the processing parameters like coating speed, gap distance, solution concentration, etc to get the smooth coated films on flexible substrates. The coating speed in slot-die method was varied from 1 m/min to 2.5 m/min focusing especially on its industrial usage. The gap distance between the substrate surface and slot-die lip was changed also to control mainly the thickness of coated films.

• Journal of Advanced Marine Engineering and Technology
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• 제24권6호
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• pp.139-146
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• 2000

The development of high performance materials is very important subject in order to enhance the properties of bearings whose role is to transfer energy harmoniously by reducing the problem of friction and wear down, etc. between the interacting solid surfaces in relative motion under high loads in comply with mechanical operating mechanism of engines. In this study, several (100-x)Al-xSn coating films (where x=85, 75, 65 atomic % at Al) on substrates which are abt. 2mm thickenss of Kelmet layer sintered back steel were prepared by using RF sputtering system. These coating films were observed the morphology by SEM(Scanning Electron Microscope) and investigated the crystal structure by XRD(X-ray Diffractor) for their properties. And friction coefficient of these films was measured by ball-on-disc tester for their tribological properties. From the experimental results, it was shown that high performance properties of bearing can be improved greatly by controlling the composition and morphology of material surface with effective use of the plasma-assisted sputtering process.

• Journal of Electrical Engineering and Technology
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• 제8권1호
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• pp.163-167
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• 2013

Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{\times}10^{-3}{\Omega}cm$ was observed at $650^{\circ}C$.