• 제목/요약/키워드: CoTi

검색결과 1,687건 처리시간 0.034초

BaTiO3 저온 소결 및 유전상에 미치는 Bi2O3/Li2CO3의 영향 (Effect of Bi2O3/Li2CO3 on Low Temperature Sintering and Dielectrics of BaTiO3 Ceramics)

  • 윤기현;신현민;강동헌
    • 한국세라믹학회지
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    • 제26권6호
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    • pp.843-849
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    • 1989

  • Effect of Bi2O3/Li2CO3 on low temperature sinteirng and dielectric property of BaTiO3 ceramics has been investigated. For the specimen sintered at 110$0^{\circ}C$, it was densified to 96% of BaTiO3 theoretical density by the addition of 1.0-1.25w/o Bi2O3/Li2CO3. Maximum dielectric constant increased and Curie temperature lowered with the increase of Bi2O3/Li2CO3 content, which probably can be explained by thne substitution of Bi3+, Li1+ on BaTiO3 lattice. The volatilization of Li1+, resulting from the increase of soaking time at 110$0^{\circ}C$ leads to the increase of Curie temperature and tetragonality of the specimen.

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Nb$_2$O$_5$와 CoO의 복합첨가가 BaTiO$_3$ 유전특성의 온도안전성에 미치는 효과 (Temperature Dependence of Dielectric Properties of BaTiO$_3$ doped with Nb$_2$O$_5$ and CoO)

  • 최광휘;황진현;한영호
    • 한국세라믹학회지
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    • 제35권8호
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    • pp.864-870
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    • 1998

  • The effect of {{{{ {{Nb }_{2 }O }_{5 } }} and CoO addition on the temperature dependence of the {{{{ {BaTiO }_{3 } }}-based ceramic capa-citor has been studied. X7R with moderate temperature dependence has been developed by means of pre-cisely controlled {{{{ {{Nb }_{2 }O }_{5 } }}/CoO ratio. Dielectric constant(K) and dissipation factor(DF) were 3500 and 1.5% respectively. As the content of {{{{ {{Nb }_{2 }O }_{5 } }} was increased the curie temperature(Tc) was shifted to lower tem-perature and the dielectric constant at Tc was decreased. The proper addition of CoO with {{{{ {{Nb }_{2 }O }_{5 } }} improved the temperature dependence of dielectric properties of the {{{{ {BaTiO }_{3 } }}-based ceramic capacitor.

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Nano-scale CMOS를 위한 Ni-germano Silicide의 열 안정성 연구 (Study of Ni-germano Silicide Thermal Stability for Nano-scale CMOS Technology)

  • 황빈봉;오순영;윤장근;김용진;지희환;김용구;왕진석;이희덕
    • 한국전기전자재료학회논문지
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    • 제17권11호
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    • pp.1149-1155
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    • 2004

  • In this paper, novel methods for improvement of thermal stability of Ni-germano Silicide were proposed for nano CMOS applications. It was shown that there happened agglomeration and abnormal oxidation in case of Ni-germano Silicide using Ni only structure. Therefore, 4 kinds of tri-layer structure, such as, Ti/Ni/TiN, Ni/Ti/TiN, Co/Ni/TiN and Ni/Co/TiN were proposed utilizing Co and Ti interlayer to improve thermal stability of Ni-germano Silicide. Ti/Ni/TiN structure showed the best improvement of thermal stability and suppression of abnormal oxidation although all kinds of structures showed improvement of sheet resistance. That is, Ti/Ni/TiN structure showed only 11 ohm/sq. in spite of 600 $^{\circ}C$, 30 min post silicidation annealing while Ni-only structure show 42 ohm/sq. Therefore, Ti/Ni/TiN structure is highly promising for nano-scale CMOS technology.

  • https://doi.org/10.4313/JKEM.2004.17.11.1149 인용 PDF KSCI