• 한국재료학회지
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• 제33권3호
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• pp.101-105
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• 2023

A mixture of elemental Co₅₀Si₅₀ powders was subjected to mechanical alloying (MA) at room temperature to prepare a CoSi thermoelectric compound. Consolidation of the Co₅₀Si₅₀ mechanically alloyed powders was performed in a spark plasma sintering (SPS) machine using graphite dies up to 800 ℃ and 1,000 ℃ under 50 MPa. We have revealed that a nanocrystalline CoSi thermoelectric compound can be produced from a mixture of elemental Co₅₀Si₅₀ powders by mechanical alloying after 20 hours. The average grain size estimated from a Hall plot of the CoSi intermetallic compound prepared after 40 hours of MA was 65 nm. The degree of shrinkage of the consolidated samples during SPS became significant at about 450 ℃. All of the compact bodies had a high relative density of more than 94 % with a metallic glare on the surface. X-ray diffraction data showed that the SPS compact produced by sintering mechanically alloyed powders for 40-hours up to 800 ℃ consisted of only nanocrystalline CoSi with a grain size of 110 nm.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.59-59
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• 1996

• 전자공학회논문지A
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• 제33A권2호
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• pp.122-130
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• 1996

In an effort to learn more about the reaction mechanisms which lead to the compound nucleation at the interface of cobalt and silicon, electrical noise properties has been investigated for cobalt thin films deposited on silicon substrates by the electron beam evaporation and rf sputtering techniques. Microstructural variations at the Co/Si interfaces have been observed by transmission electronmicroscopy. Amorphous structures are observed at the Co/Si interfaces for samples whose cobalt thicknesses are less than 4nm and a polycrystalline compound nucleation has been occurred for thicker films. 1/f noise power same samples, and the spetral density has been normalized. The amplitude of 1/f noise power spectral density shows a gradual increase as the cobalt thickness is increased, and the amplitude has dropped abruptly after the compound nucleation. The variations of the noise parameters areassumed to be an indiction of the phase transformation along the nucleation reaction path, and amplitude has been interpreted as instabilities of the Co/Si interfacial structures.

• 전자통신동향분석
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• 제32권6호
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• pp.8-16
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• 2017

In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

• 한국재료학회지
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• 제13권2호
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• pp.88-93
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• 2003

Co/Ti bilayer structure in Co salicide process helps to the improvement of device speed by lowering contact resistance due to the epitaxial growth of $CoSi_2$layers. We investigated the epitaxial growth and interfacial mass transport of $CoSi_2$layers formed from $150 \AA$-Co/Ti structure with two step rapid thermal annealing (RTA). The thicknesses of Ti layers were varied from 20 $\AA$ to 100 $\AA$. After we confirmed the appropriate deposition of Ti film even below $100\AA$-thick, we investigated the cross sectional microstructure, surface roughness, eptiaxial growth, and mass transportation of$ CoSi_2$films formed from various Ti thickness with a cross sectional transmission electron microscopy XTEM), scanning probe microscopy (SPM), X-ray diffractometery (XRD), and Auger electron depth profiling, respectively. We found that all Ti interlayer led to$ CoSi_2$epitaxial growth, while $20 \AA$-thick Ti caused imperfect epitaxy. Ti interlayer also caused Co-Ti-Si compounds on top of $CoSi_2$, which were very hard to remove selectively. Our result implied that we need to employ appropriate Ti thickness to enhance the epitaxial growth as well as to lessen Co-Ti-Si compound formation.

• 한국재료학회지
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• 제8권6호
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• pp.484-492
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• 1998

단결정 Si기판위의 Co/Ti 이중층으로부터 형성된 Co 실리사이드의 에피텍셜 성장기구에 대하여 조사하였다. 실리사이드화 과정중 Ti원자들이 저온상의 CoSi결정구조의 tetrahedral site들을 미리 점유해 있음으로 인하여, $CoSi_{2}$ 결정구조로 바뀌는 과정에서 Si원자들이 나중에 제위치를 차지하기 어렵게 되는 효과 때문이다. 그리고 Ti중간층은 반응의 초기단계에 Co-Ti-O 삼원계 화합물을 형성하는데, 이 화합물은 실리사이드화 과정중 반응 제어층으로 작용하여 에피텍셜 실리사이드 형성에 중요한 역할을 한다. 최종 열처리 층구조 Ti oxide/Co-Ti-Si/epi/$Cosi_{2}$(100) Si 이었다.

• 한국정밀공학회지
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• 제29권9호
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• pp.931-937
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• 2012

In this study, we assessed environmental impacts of compound humidifiers using environmental life cycle assessment and presented the ways to improvements in energy consumption of them. We found eco-design parameters and $CO_2$-eq emissions in each stage of raw material acquisition, manufacturing, transportation, use and disuse in life cycle of the compound humidifiers. The highest $CO_2$ emission is found to be in the stage of use among all stages of life cycle, which is mainly due to power consumption in thermal heating of heating coil for sterilization during humidification. The power consumption and $CO_2$ emission in the stage of use can be reduced to 1/4 and 1/3 at the highest estimate through improvement of sterilization method, respectively. We suggested the replacement of conventional thermal heating coil by ultra violet light-emitting diodes (UV-LED) for sterilization and then presented the experimental results on the sterilization effects of UV-LEDs.

• Journal of Magnetics
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• 제16권3호
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• pp.318-321
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• 2011

A new Fe-based amorphous compound powder was prepared from Fe-Si-B amorphous powder by crushing amorphous ribbons as the first magnetic component and Fe-Cr-Mo metallic glassy powder by water atomization as the second magnetic component. Subsequently by adding organic and inorganic binders to the compound powder and cold pressing, the new Fe-based amorphous compound powder cores were fabricated. This new Fe-based amorphous compound powder cores combine the superior DC-Bias properties and the excellent core loss. The core loss of 500 kW/$m^3$ at $B_m$ = 0.1T and f = 100 kHz was obtained When the mass ratio of FeSiB/FeCrMo equals 3:2, and meanwhile the DC-bias properties of the new Fe-based amorphous compound powder cores just decreased by 10% compared with that of the FeSiB powder cores. In addition, with the increasing of the content of the FeCrMo metallic glassy powder, the core loss tends to decrease.

• 콘크리트학회논문집
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• 제18권1호
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• pp.57-64
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• 2006

콘크리트에 균열이 발생하면 구조물의 구조적인 결함, 내구성 저하, 외관손상 등을 유발하여 치명적인 손실을 초래하기 때문에 균열제어를 통한 내구성능의 증대가 필수적이다. 국내 콘크리트 구조물의 동향을 살펴보면 LCC개념에 비추어 구조물의 신축비용이 25%에 불과하고, 다양한 형태의 균열보수, 개수, 유지관리 및 폐기처분에 대한 비용이 75%를 차지함에 따라 구조물의 시공시 콘크리트의 균열발생과 시공 후 콘크리트 내 철근부식을 억제하는 기술이 요구된다고 할 수 있다. 본 연구에서는 1990년대 후반부터 인산(H3PO4) 및 불산(HF)을 제조하는 공정 중에 액상형태의 부산물로 회수되는 불화규산(H2SiF6)을 활용하여 안정한 액상형태로 제조되는 규불화염계 화합물에 의한 균열저감 특성과 내구성에 대한 검토를 수행한 결과, 규불화염계 무기 조성물의 첨가로 수밀성이 증진되어 치밀한 경화조직을 형성함으로써 경화 후 급격한 수분의 손실에 따른 경화수축이 억제되어 건조수축을 저감시키는 특성을 발휘하였다. 또한 수화온도 및 수축 저감에 의해 조기에 균열발생을 억제하고, 수밀성을 증진시킴으로써 중성화, 동결융해저항성 및 염소이온침투깊이에 있어서 무첨가 콘크리트에 비해 상당히 개선되는 효과를 확인하였다. 마지막으로, 콘크리트 변형이 크게 발생되는 복합열화 환경 하에서도 SWP-2에 의한 내구성 향상 효과가 확인되었다.

• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.1-5
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• 2008

Silicide formation process and the formation sequence were investigated in this study. It was postulated that the formation of the second silicide phase involves glass formation between the first silicide phase and Si given that a thin metal film is deposited on a Si substrate. The concentration of glass was assumed to be located where the free energy of the liquid alloy with respect to the first nucleated compound and solid Si (${\Delta}$G') is most negative. It was also mentioned that the glass concentration is close to the composition of the second phase in order to achieve the maximum energy degradation. It was shown that the minimum ${\Delta}$G' concentration can be estimated by interpolating the portion of the liquidus where the liquid alloy is in equilibrium with the two solid constituents, namely the first compound phase and Si, thereby forming a hypothetical eutectic.