• Title/Summary/Keyword: CoO doping

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Characteristics of LaCo1-xNixO3-δ Coated on Ni/YSZ Anode using CH4 Fuel in Solid Oxide Fuel Cells

  • Kim, Jun Ho;Jang, Geun Young;Yun, Jeong Woo
    • Journal of Electrochemical Science and Technology
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    • v.11 no.4
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    • pp.336-345
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    • 2020
  • Nickel-doped lanthanum cobalt oxide (LaCo1-xNixO3-δ, LCN) was investigated as an alternative anode material for solid oxide fuel cells. To improve its catalytic activity for steam methane reforming (SMR) reaction, Ni2+ was substituted into Co3+ lattice in LaCoO3. LCN anode, synthesized using the Pechini method, reacts with yttria-stabilized zirconia (YSZ) electrolyte at high temperatures to form an electrochemically inactive phase such as La2Zr2O7. To minimize the interlayer by-products, the LCN was coated via a double-tape casting method on the Ni/YSZ anode as a catalytic functional layer. By increasing the Ni doping amount, oxygen vacancies in the LCN increased and the cell performance improved. CH4 fuel decomposed to H2 and CO via SMR reaction in the LCN functional layer. Hence, the LCN-coated Ni/YSZ anode exhibited better cell performance than the Ni/YSZ anode under H2 and CH4 fuels. LCN with 12 mol% of Ni (LCN12)-modified Ni/YSZ anode showed excellent long-term stability under H2 and CH4 conditions.

Temperature Dependence of Resistivity in As Implanted LPCVD Polycrystalline Silicon Films (LPCVD로 제조된 다결정실리콘에 As를 주입한 시료의 비저항에 대한 온도의존성 연구)

  • Ha, Hyoung-Chan;Kim, Chung-Tae;Ko, Chul-Gi;Chun, Hui-Gon;Oh, Kye-Hwan
    • Korean Journal of Materials Research
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    • v.1 no.1
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    • pp.23-28
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    • 1991
  • The resistivity of polycrystalline silicon film deposited by low pressure chemical vapor deposition and doped by arsenic Implantation has been investigated as a function of dopant concentration and testing temperature ranging from $25^{\circ}C$ to $105^{\circ}C$ . The resistivity vs. doping concentration curve had a peak point with highest activation energy with respect to the dependence of the resistivity on temperature. We showed that $O_2$ plasma anneal followed by heat-treatment in $N_2$ ambient was able to recover the resistivity degraded by the plasma deposited passivation layers.

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Influence of Yb2O3 Doping Amount on Screen-printed Barium Strontium Calcium Titanate Thick Films

  • Noh, Hyun-Ji;Lee, Sung-Gap;Ahn, Byeong-Lib;Lee, Ju
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.6
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    • pp.241-245
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    • 2007
  • [ $(Ba_{0.9-x}Sr_xCa_{0.10})TiO_3$ ] (x=0.33, 0.36) powders were prepared by sol-gel method. $(Ba,Sr,Ca)TiO_3$(BSCT) thick films, undoped and doped with $MnCO_3$ and $Yb_2O_3(0.1{\sim}0.7mol%)$, were fabricated by the screen printing method on the alumina substrate. The coating and drying procedure was repeated 6-times. The Pt bottom electrode was screen printing method on the alumina substrate. These BSCT thick films were annealed at $1420^{\circ}C$ for 2 hr in atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at $590^{\circ}C$ for 10 min. And then the structured and dielectric properties as a function of the doping amount of $Yb_2O_3$ were studied. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed XRD patterns of typical cubic peroveskite structure. The average thickness of BSCT thick films was about $70^{\mu}m$. The curie temperature and the dielectric constant decreased with increasing $Yb_2O_3$ doped content and the relative dielectric constant of the specimen, doped with 0.5 mol% $Yb_2O_3$ at BSCT(54/36/10), showed a best value of 5018 at curie temperature.

Optical Properties of HVPE Grown Thick-film GaN on $MgAl_2O_4$ Substrate ($MgAl_2O_4$ 기판위에 HVPE법으로 성장된 후막 GaN의 광학적 특성)

  • Lee, Yeong-Ju;Kim, Seon-Tae
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.526-531
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    • 1998
  • A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

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A Study on Oxygen Evolution Activity of Co3O4 with different morphology prepared by Ultrasonic Spray Pyrolysis for Water Electrolysis (분무열분해로 합성한 수전해용 Co3O4의 입자형태에 따른 산소발생 활성에 관한 연구)

  • Kim, Ingyeom;Nah, In Wook;Park, Sehkyu
    • Korean Chemical Engineering Research
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    • v.54 no.6
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    • pp.854-862
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    • 2016
  • As the demand for a clean energy to replace fossil fuel being depleted increases, hydrogen energy is considered as a promising candidate for future energy source. Water electrolysis which produces hydrogen has high energy efficiency and stability but still has a large overpotential for oxygen evolution reaction (OER). In this study, $Co_3O_4$ catalysts with different morphology were prepared by spray pyrolysis from solutions which contain Co precursor and various organic additives (urea, sucrose, and citric acid), followed by post heat treatment. For the catalysts synthesized, X-ray diffraction (XRD) measurements were performed to identify their crystal structure. Morphology and surface shape of the catalysts were observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Surface area and pore volume were examined by nitrogen adsortpion & desorption tests and X-ray photoelectron spectroscopy (XPS) was conducted to confirm nitrogen doping. Linear sweep voltammetry (LSV) was carried out to investigate OER activity of $Co_3O_4$ catalysts. As a result, bare-$Co_3O_4$ which has high surface area and small particle size determined by spray pyrolysis showed high activity toward OER.

Piezoelectric and Dielectric Characteristics of Low Temperature Sintering PMN-PNN-PZT Ceramics according to the addition of dopant (불순물 첨가에 따른 저온소결 PMN-PNN-PZT 세라믹스의 압전 및 유전특성)

  • Lee, Sang-Ho;Lee, Chang-Bae;Jeong, Gwang-Hyeon;Yoo, Joo-Hyun;Hong, Jae-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.33-34
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    • 2005
  • In this study, in odor to develop low temperature sintering multilayer piezoelectric actuator and ultrasonic vibrator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3$ and $Na_2CO_3$ as sintering aids and their piezoelectric and dielectric characteristics were investigated according to the addition of dopant CuO and $Fe_2O_3$, respectively. The CuO added PMN-PNN-PZT ceramics improved mechanical quality factor Qm due to the acceptor doping effect. And also, $Fe_2O_3$ reacted as softner in this composition system in addition to the increase of grain size and sinterability. Taking into consideration electromechanical coupling factor kp of 0.62, dielectric constant $\varepsilon_r$, of 1275, Piezoelectric $d_{33}$ constant of 377[pC/N] and mechanical quality factor Qm of 975, it was concluded that the ceramics with the $Fe_2O_3$, added composition sintered at 900[$^{\circ}C$] were best for the multilayer piezoelectric actuator and ultrasonic vibrator application.

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The Initial Irreversible Capacity of the First Doping/Undoping of Lithium into Carbon

  • Doh, Chil-Hoon;Kim, Hyun-Soo;Moon, Seong-In
    • Carbon letters
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    • v.1 no.3_4
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    • pp.148-153
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    • 2001
  • The initial irreversible capacity, $Q_i$, is one of the parameters to express the material balancing of the cathode to anode. We introduced new terms, which are the initial intercalation Ah efficiency (IIE) and the initial irreversible specific capacity at the surface ($Q_{is}$), to express precisely the irreversibility of an electrode/electrolyte system. Two terms depended on kinds of active-materials and compositions of the electrode, but did not change with charging state. MPCF had the highest value of IIE and the lowest value of $Q_{is}$ in 1M $LiPE_6$/EC + DEC (1 : 1 volume ratio) electrolyte. IIE value of $LiCoO_2$ electrode was 97-98%, although the preparation condition of the material and the electrolyte were different. $Q_{is}$ value of $LiCoO_2$ was 0~1 mAh/g. MPCF-$LiCoO_2$ cell system had the lowest of the latent capacity. $Q_{is}$ value increased slightly by adding conductive material. IIE and $Q_{is}$ value varied with the electrolyte. By introducing PC to EC+DEC mixed solvent, IIE values were retained, but $Q_{is}$ increased. In case of addition of MP, IIE value increased and $Q_{is}$ value also increased a little.

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Resistive Switching Properties of N and F co-doped ZnO

  • Kim, Minjae;Kang, Kyung-Mun;Wang, Yue;Chabungbam, Akendra Singh;Kim, Dong-eun;Kim, Hyung Nam;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.2
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    • pp.53-58
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    • 2022
  • One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

Surface Characterization of Carbon Fibers as Anode Materials for Li Secondary Batteries

  • Takamura, Tsutomu;Awano, Hidekazu;Ura, Tetsuya;Ikezawa, Yasunari
    • Analytical Science and Technology
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    • v.8 no.4
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    • pp.583-590
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    • 1995
  • Pitch-based mesophase carbon fibers prepared at different temperatures were heat-treated at temperatures lower than those of the preparation and the electrochemical Li doping/undoping characteristics were evaluated in relation to the data of IR, mass, etc. Presence of surface hydroxyls were confirmed by FTIR for lower temperature sample which showed poor anode characteristics. Upon oxidative heating, removal of surface hydroxyls took place, resulting in a remarkable improvement of the electrode characteristics. At the same time, surface roughening took place, which was confirmed by SEM and double layer capacity measurements. In situ mass spectra obesrved during the heat-treatments showed gas evolution of $H_2O$, CO, $CO_2$, $C_2H_4$, and/or $H_2$ depending on the conditions. These data together with those of weight loss and conductivity provided us a valuable information in regard to the evaluation of the electrochemical characteristics.

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Buffer and Anode Combined Ta Doped In2O2 Electrodes Prepared by Co-sputtering for PEDOT:PSS-free Organic Solar Cells

  • Lee, Hye-Min;Noh, Yong-Jin;Na, Seok-In;Park, Hyun-Woo;Chung, Kwun-Bum;Kima, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.168.1-168.1
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    • 2014
  • We developed poly (3,4-ethylene dioxylene thiophene):poly (styrene sulfonic acid) (PEDOT:PSS)-free organic solar cells (OSCs) using buffer and anode combined Ta doped $In_2O_3$ (ITaO) electrodes. To optimize the ITaO electrodes, we investigated the effect of $Ta_2O_5$ doping power on the electrical, optical, and structural properties of the co-sputtered ITaO films. The optimized ITaO film doped with 20 W $Ta_2O_5$ radio frequency power showed sheet resistance of 17.11 Ohm/square, a transmittance of 93.45%, and a work function of 4.9 eV, all of which are comparable to the value of conventional ITO electrodes. The conventional bulk heterojunction OSC with ITaO anode showed a power conversion efficiency (PCE) of 3.348% similar to the OSCs (3.541%) with an ITO anode. In addition, OSCs fabricated on an ITaO electrode successfully operated without an acidic PEDOT:PSS buffer layer and showed a PCE of 2.634%, which was much higher than the comparable no buffer OSC with an ITO anode. Therefore, co-sputtered ITaO electrodes simultaneously acting as a buffer and an anode layer can be considered promising transparent electrodes for cost-efficient and reliable OSCs because they can eliminate the use of an acidic PEDOT:PSS buffer layer.

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