• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.119-124
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• 1992

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pd superlattice thin films. The samples were prepared by dc magnetron sputtering from 2-in.-diam Co and Pd targets by alternately exposing the substrates to targets. Sputtering Ar gas pressure was varied from 2 to 30 mTorr. All samples had same bilayer thicknesses composed of 2-$\AA$-thick Co and 9-$\AA$-thick Pd sublayers. It was observed that the colum-nar structure was more distinctively developed with increasing Ar gas pressure. We observed that the intrinsic uniaxial anisotropy energy, magnetization and polar Kerr rotation were decreased with increasing Ar gas pressures. Large coercivity and perfect squareness were attained by the deposition at the high Ar gas pressure. We believe that the results are mainly ascribed the variation of micro-structure with sputtering Ar gas pressure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.43-50
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• 2007

We have investigated the electro-optical characteristics and reliability of LEDs with the Indium-Tin-Oxide (ITO) electrodes formed by different deposition methods: electron beam evaporation, sputtering, and hybrid method of electron beam evaporation and subsequent sputtering. The deposition method of the ITO electrode has significant influence on the electro-optical characteristics and reliability of LEDs. The LEDs with the ITO electrodes formed by sputtering and electron beam evaporation have problems caused by sputtering damage and increased electrical resistance, respectively, and the problems have been solved by the hybrid method.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.416-419
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• 2008

In this study, we report on the characteristics of Aldoped ZnO (AZO) co-sputtered indium tin oxide (ITO) films prepared by dual target direct current (DC) magnetron sputtering at room temperature for organic light emitting diodes (OLEDs). The electrical and optical properties of co-sputtered IAZTO electrode were critically dependent on the DC power of AZO. Furthermore, the characteristics of co-sputtered IAZTO electrode were influenced by rapid thermal annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.363-366
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• 1998

Shuttered Co-Cr thin films have been developed continuously as one of the major candidates for high density recording media. In this study, Co-26at%Cr thin films with c-axis oriented h.c.p. structure prepared by a improved facing targets sputtering system. We find that the effect of microstructural changes of sputtered Co-Cr thin films on magnetic properties and changes of crystal orientation due to variation substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.10a
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.796-800
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO) thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.230-234
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• 2000

Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{y}$(n$\geq$0; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-law growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.on.n.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.122-127
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• 2009

Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO ($Al_2O_3$:2.0 wt%) target and GZO ($Ga_2O_3$:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity $1.95{\times}10^{-3}{\Omega}cm$ was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of $7.47{\times}10^{-4}{\Omega}cm$ at below $300^{\circ}C$. Furthermore, when 0.05% $H_2$ gas was introduced, resistivity of GAZO film decreased to $6.69{\times}10^{-4}{\Omega}cm$. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.60-61
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• 2007

IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity($2.32{\times}10^{-4}{\Omega}.cm$) and high transparency(approximately 80%) in the visible range were obtained even at low temperature deposition. Finally, J-V-L characteristics of phosphorescent OLED with IAZO anode were studied by Keithley 2400 and compared with phosphorescent OLED with conventional ITO anode.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.282-283
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• 2003

TiO$_2$ 박막은 높은 굴절률과 유전 상수를 가지며, 가시광선과 근적외선 영역에서 우수한 투과성을 나타낸다. 따라서, 전기적, 광학적 특성이 우수한 광학코팅에 응용되고 있다. 또한 화학적으로 안정하고 비교적 큰 에너지 밴드 갭을 지닌 반도체 물질로서 유전체 다층 박막을 제작하는데 있어서 중요한 물질로 사용되고 있다. TiO$_2$ 박막을 제작하기 위한 물리적인 방법으로는 sputtering, anodic 또는 thermal, e-beam evaporation 등이 이용되고 있으며, sol-gel법, CVD 등과 같은 화학적인 방법도 이용되고 있다. (중략)