• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.472-476
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• 2007

In this study, we investigated methods for p-type ZnO deposition as well as stability enhancement of its properties. The film was prepared by co-depositing AlAs and ZnO in a RF magnetron sputtering system. Property variation was monitored with photoluminescence and Hall measurements by stressing the films at $250^{\circ}C$ for various duration upto 144 hours. Results indicated that co-deposition is a useful method for p-type ZnO preparation. In particular, pre-treatment in 30% $H_2O_2$ for 1min was observed to be effective in reducing the property variation taking place during the subsequent high temperature processes.

• Journal of the Korean Magnetics Society
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• v.7 no.3
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• pp.146-151
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• 1997

Buffer (t $\AA$)/ CoFe(35$\AA$)/Cu (50$\AA$)/Co (35$\AA$) sandwiches prepared by dc magnetron sputtering on Corning glass substrates using the $Co_{90}Fe_{10}$ and Co layers with different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layers, and on the thickness of Cu and the magnetic layers in buffer/ CoFe/Cu /Co sandwiches were investigated. Magnetoresistance ratio and saturation field $H_s$ increased as thickness of the buffer layer becomes thicker, then decreased smoothly after a maximum value. An improved filed sensitivity was realized with the $Ni_{81}Fe_{19}$ buffer layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.995-997
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• 2005

A plastic substrate for flexible display is developed. The gas barrier and optical properties of the substrate is improved through depositing silicon oxide/nitride layer and coating polymer layer on plastic film by sputtering process and wet coating process. Roll to roll processes will guarantee the productivity in the whole production process of the plastic substrate.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.176-186
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• 1998

Pure Pt, Co and their alloy thin films with three different compositions (Pt66-Co34, Pt40-Co60 and Pt18-Co82) were deposited on Si(100) wafers and proposed as a set of certified reference materials (CRM) for the quantification and standardization of surface compositional analysis. The compositions of the binary alloy thin films were controlled by in-situ XPS analyses and the certified compositions of the films have been determined by ICP-AES and RBS analyses after thin film growth. Through comparison of the compositions determined by in-situ XPS with those by ICP, relatively accurate compositions could be obtained with a matrix effect correction. Standard deviations of XPS and AES round robin tests with the Pt-Co alloy thin films were large up to about 4%. On the other hand, the average compositions of the Pt-Co alloy thin films by two methods were in a good agreement within 1%. The formation of a Pt rich surface layer by ion beam sputtering indicates that the surface modification by preferential sputtering must be understood for a better compositional analysis.

• Textile Coloration and Finishing
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• v.18 no.4
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• pp.11-19
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• 2006

Black-dyed PET fabrics were sputtered with stainless steel through DC-magnetron type device to investigate the possibility of coloration effect, and then considered the morphological structure and physical characteristics such as water permeation ability and washing fastness. Change in color was estimated on the basis of CIELAB color system. The color coordination of metal plated PET was shifted to yellow-red from red-blue. Colour difference$({\Delta}E^*)$ was increased by sputtering conditions with increasing ion current and treatment time. Especially, $Lightness(L^*)$ value of PET was remarkably increased by sputtering, whereas $Chroma(C^*)$ increased gradually. From SEM analysis, rough and uneven craters were found and thickened on the fiber surfaces with longer sputtering time. And washing fastness was a little poor and absorption ability slightly decreased. There were little changes of breaking load and breaking extension. It was evident that observed uneven craters in the plated thin layer resulted in the colour change of PET fabrics by sputtering treatments.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.519-523
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• 2003

We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.61-68
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• 1992

Structural, magnetic and magneto-optical(1.0~3.2eV) properties of rare earth (Ce, Pr, Eu), transition metal(Ni, Co), and Al substituted polycrystalline Ba ferrite films grown by rf sputtering have been investigated. TEM studies revealed that crystal grains in the films were reduced in size from several hundred nm to the order of 1 nm with the decrease of rf power density during sputtering. By substituting Al, square hysteresis loops have successfully been obtained. It has been found that Niions strongly enhances Faraday rotation of the films in the visible range. It has been confirmed that Co ions also strongly enhances Faraday rotation of the films in the near infrared. En- hancement in Faraday rotation by Ce, Pr, and Eu ions has not been observed. The origin of the enhancement in magnetic and magneto-optical properties of the films is discussed.

• Journal of Integrative Natural Science
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• v.9 no.4
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• pp.223-227
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• 2016

The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron co-sputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.