• Title/Summary/Keyword: Co deposition

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Perpendicular Magenetic Anisotropy in TbFeCo Magneto Optic Recording Thin Films

  • Lee, Yong-Ho-;Lee, Sang-Soo-
    • Proceedings of the Optical Society of Korea Conference
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    • 1988.06a
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    • pp.127-131
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    • 1988
  • In order to clarify the origin of perpendicular anisotropy in thermally evaporated TbFeCo amorphous thin films, we have investigated the effects of deposition angle on magnetic Kerr hysteresis loop, perpendicular magnetic anisotropy and internal stress depend strongly on the deposition angle and above a threshold value(30$^{\circ}$), the perpendicular anisotropy disapperars and the in-plane anisotropy appears. The measurement of internal stress is the major contribution to the perpendicular anisotropy. The measurements of Kerr hysteresis loops in the polar and the longitudinal directions show that as the deposition angle increases the polar kerr hystresis loop deteriorates while the longitudinal Kerr hystersis loop becomes prominent.

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Effect of underlayer electroless Ni-P plating on deposition behavior of cyanide-free electroless Au plating (비시안 무전해 Au 도금의 석출거동에 미치는 하지층 무전해 Ni-P 도금 조건의 영향)

  • Kim, DongHyun;Han, Jaeho
    • Journal of the Korean institute of surface engineering
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    • v.55 no.5
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    • pp.299-307
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    • 2022
  • Gold plating is used as a coating of connector in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. In most cases, internal connection between device and package and external terminals for connecting packaging and printed circuit board are electroless Ni-P plating followed by immersion Au plating (ENIG) to ensure connection reliability. The deposition behavior and film properties of electroless Au plating are affected by P content, grain size and mixed impurity components in the electroless Ni-P alloy film used as the underlayer plating. In this study, the correlation between electroless nickel plating used as a underlayer layer and cyanide-free electroless Au plating using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated.

Reactive Co-Evaporation of YBCO for Coated Conductors

  • Matias, V.;Hanisch, J.;Sheehan, C.;Ugurlu, O.;Storer, J.
    • Progress in Superconductivity and Cryogenics
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    • v.9 no.4
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    • pp.1-6
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    • 2007
  • We describe methods for depositing high temperature superconducting films on textured metal tapes by reactive co-evaporation (RCE). We discuss how RCE can be used to deposit on moving tape in a continuous fashion in a Garching-style process. Results are presented on films deposited by RCE at Los Alamos on IBAD-MgO textured tapes. The performance achieved, attaining over 500A/cm-width in self-field at 75.5 K, is competitive with the best results obtained by other processes for coated conductors. Tape production throughput is critical for the economics of the process and high deposition rates achieved in RCE are attractive for this. We present a detailed cost analysis model for HTS deposition using an RCE Garching process. The results indicate that HTS deposition can cost $<$5/kA{\cdot}m$ in a scaled up manufacturing environment.

Effect of residual oxygen in a vacuum chamber on the deposition of cubic boron nitride thin film

  • Oh, Seung-Keun;Kang, Sang Do;Kim, Youngman;Park, Soon Sub
    • Journal of Ceramic Processing Research
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    • v.17 no.7
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    • pp.763-767
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    • 2016
  • The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.

Electroless Plating of Co-Alloy Thin Films using Alkali-Free Chemicals (Alkali 물질이 포함되지 않은 화학물질을 이용한 Co 합금박막의 무전해도금)

  • Kim, Tae Ho;Yun, Hyeong Jin;Kim, Chang-Koo
    • Korean Chemical Engineering Research
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    • v.45 no.6
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    • pp.633-637
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    • 2007
  • Electroless plating of Co-alloy thin films as capping layers for Cu interconnection has been investigated using alkali-free precursors such as $(NH_4)_2Co(SO_4)_2{\cdot}6H_2O$, $(NH_4)_2WO_4$, $(NH_4)H_2PO_4$, etc. The characteristics of the Co-alloy thin films were discussed by analyses of the effects of pH, Co-precursor concentration, and deposition temperature on the thickness and surface morphology of the films. The thickness of the Co-alloy thin films increased with increasing pH, Co-precursor concentration, and deposition temperature, similarly to the results of electroless plating of Co-alloy thin films using alkali-containing chemicals. The SEM images of the surface of the Co-alloy thin films showed that the proper ranges of pH and deposition temperature were 8.5~9.5 and $75{\sim}85^{\circ}C$, respectively. This work found a feasibility that Co-alloy thin films as capping layers for Cu interconnection could be electroless plated using alkali-free chemicals.

Deposition Optimization and Bonding Strength of AuSn Solder Film (AuSn 솔더 박막의 스퍼터 증착 최적화와 접합강도에 관한 연구)

  • Kim, D.J.;Lee, T.Y.;Lee, H.K.;Kim, G.N.;Lee, J.W.
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.2 s.43
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    • pp.49-57
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    • 2007
  • Au-Sn solder alloy were deposited in multilayer and co-sputtered film by rf-magnetron sputter and the composition control and analysis were studied. For the alloy deposition condition, each components of Au or Sn were deposited separately. On the basis of pure Sn and Au deposition, the deposition condition for Au-Sn solder alloy were set up. As variables, the substrate temperature, the rf-power, and the thickness ratio were used for the optimum composition. For multilayer solder alloy, the roughness and the composition of solder alloy were controlled more accurately at the higher substrate temperature. In contrast, for co-sputtered solder, the substrate temperature influenced little to the composition, but the composition could be controlled easily by rf-power. In addition, the co-sputtered solder film mostly consisted of intermetallic compound, which formed during deposition. The compound were confirmed by XRD. Without flux during bonding of solder alloy film on leadframe, the adhesion strength were measured. The maximum shear stress was $330(N/mm^2)$ for multilayer solder with Au 10wt% and $460(N/mm^2)$ for co-sputtered solder with Au 5wt%.

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