• 한국정보통신학회논문지
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• 제20권5호
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• pp.923-930
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• 2016

상 하수도, 해양플랜트 등 다양한 배관이 산업현장에 이용되고 있으며, 이러한 배관의 유지보수 작업은 필수적이다. 특히 산업현장에서 배관 유지보수 작업은 전문 인력이 배관 내 투입되어 작업이 진행되거나, 인력 투입이 불가능한 경우 와이어에 연결된 스크래퍼를 배관에 삽입하는 방식을 이용한다. 그러나 이 방식은 교통체증, 막대한 예산의 투입 등의 문제를 야기한다. 이런 문제점을 해결하기 위한 배관 청소 로봇의 연구, 개발이 진행되고 있다. 현재 배관청소 로봇은 작업 및 운용 상태를 실시간으로 확인할 수 없는 문제점이 있다. 본 논문에서는 배관 청소로봇의 운용, 배관 내부 및 청소 상태를 확인할 수 있도록 카메라로부터 촬영된 영상을 수집하며, 수집된 데이터는 RS-485 통신을 이용하여 모니터링 시스템에 전송하여 사용자가 실시간으로 상태를 확인할 수 있게 구성하였다.

• 공업화학
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• 제29권2호
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• pp.229-236
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• 2018

섬유산업에서 배출되는 오일미스트를 함유한 배기가스를 처리하기 위해 개발되어 실제 현장에 적용되고 있는 electric fume collector (EFC) 설비의 집진판 오염에 의한 성능저하를 개선하기 위한 맞춤형 세정제를 검토하였다. 집진판 표면의 오염물질은 오일미스트가 장기간 축적되면서 심하게 탄화되어 일반 세정제로는 쉽게 제거하기 어려운 상태였다. 오염물질의 특성과 집진판 모재의 손상 등을 고려하여, 알칼리, 알코올, 글리콜 및 비이온계 계면활성제로 구성된 최적의 세정제 성분 조성을 결정하였다. 현장실증실험에는 개발된 세정제 원액을 9.1%로 희석한 용액을 이용하였으며, 단순한 분무방식으로 심하게 점착된 집진판 표면의 오염물질을 성공적으로 제거할 수 있었다. 집진판의 세척에 의하여 EFC 설비의 배기가스 정화성능 개선효과도 크게 향상되었다.

• 전자공학회논문지SC
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• 제45권5호
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• pp.44-51
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• 2008

UV 램프 시스템은 오랫동안 TFT LCD 나 PDP 의 패널 세정에 사용되어 왔으나, 저렴한 가격의 고성능 세정에 대한 필요성 때문에 고전압 플라즈마 세정에 대한 기술이 개발되고 그 성능이 향상되어 왔다. 장벽방전 (barrier discharge) 혹은 무성방전 (silent discharge)으로 불리는 유전체 장벽 방전 (Dielectric-Barrier Discharges, DBDs) 는 오존 발생기에 주로 이용되어 왔다. 본 논문에서는 LCD 세정용으로 6kW 급 고전압 플라즈마 발생장치를 구현하였다. 3상 입력전압을 직류로 정류한 뒤, 인버터 시스템에 의해 고주파 펄스로 바꾸고 고압 트랜스퍼머를 거쳐 다이오드로 정류한다. 마지막으로, 고압 플라즈마를 발생시키기 위해 양방향 고전압 펄스 스위칭회로가 사용되었다. 실험을 통해 상압 플라즈마가 LCD 패널 세정에 크게 유용함을 보였다.

• 한국산업보건학회지
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• 제15권1호
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• pp.19-26
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• 2005

In previous report, we presented that petroleum based solvents used in dry cleaning shop was almost similar to stoddard solvent defined by ACGIH and NIOSH, and the occupational exposure standard of stoddard solvent could be used in total exposure assessment of those solvents. The specific aim of the this study was to evaluate of the solvent exposure used in commercial dry cleaning shops by using occupational exposure standard of stoddard solvent. We conducted first survey of 8 self-employed dry cleaning shops and 5 factory type dry cleaning shops from July to August, and second survey of the same shops from October to November in 2002. The exposure concentration to the solvent during loading and unloading activity of vented dry cleaning machine was 489.2ppm(GM), 270.3ppm(GM), respectively, which was almost excursion limit(500ppm) of ACGIH, and exceed the ceiling limit(312ppm) of NIOSH. The time-weighted average (TWA) worker exposure to the solvent was 21.3ppm(GM) at self-employed shops, 20.7ppm(GM) at factory type shops on first survey, and 31.1ppm(GM), 33.7ppm(GM), respectively on second survey. The TWA exposure concentration of workers with spotting and cleaning machine operating job was 25.4ppm(GM), which was 2.9 times higher than the TWA exposure concentration, 8.8ppm(GM) of press workers. All TWA exposure concentrations was lower than OEL(100ppm) of stoddard solvent. We found that the most heavy exposure process at dry cleaning was loading, unloading process, and the vent of dry cleaning machine was the main emission source for workers exposure to petroleum based solvent.

• 한국컴퓨터정보학회논문지
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• 제25권4호
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• pp.37-45
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• 2020

딥러닝의 개발 프로세스는 대량의 수작업이 요구되는 반복적인 작업으로 그 중 학습 데이터 전처리는 매우 큰 비용이 요구되며 학습 결과에 중요한 영향을 주는 단계이다. AI의 알고리즘 연구 초기에는 주로 데이터 과학자들에 의해 완벽하게 정리하여 제공된 공개 DB형태의 학습데이터를 주로 사용하였다. 실제 환경에서 수집된 학습 데이터는 주로 센서들의 운영 데이터이며 필연적으로 노이즈가 많이 발생할 수 있다. 따라서 노이즈를 제거하기 위한 다양한 데이터 클리닝 프레임워크와 방법들이 연구되었다. 본 논문에서는 IoT환경에서 발생 될 수 있는 센서 데이터와 같은 시계열 데이터에서 노이즈를 감지하고 제거하는 방법을 제안하였다. 이 방법은 선형회귀 방법을 사용하여 시스템이 반복적으로 노이즈를 찾아내고, 이를 대체할 수 있는 데이터를 제공하여 학습데이터를 클리닝한다. 제안된 방법의 효과를 검증하기 위해서 본 연구에서 시뮬레이션을 수행하여, 최적의 클리닝 결과를 얻을 수 있는 인자들의 결정 방법을 확인하였다.

• Corrosion Science and Technology
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• 제9권6호
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• 한국산업보건학회지
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• 제33권2호
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• pp.171-187
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• 2023

Objectives: Aircraft cabin cleaning work is characterized by being performed within a limited time in a narrow and enclosed space. The objective of this study was to evaluate the exposure levels to dust, ultra fine dust(PM2.5) and black carbon(BC) among aircraft cabin cleaners. Methods: Active personal air sampling for respirable dust(n=73) and BC(n=47) was conducted during quick transit cleaning(cabin general and vacuum-specific) and seat cover replacement and total dust and PM2.5 were area-air-sampled as well. Also, size distribution of particle was identified with the cleaning workers targeted. Dusts were collected with PVC filters using gravimetric analysis. The concentration of PM2.5 and the particle size distribution were measured with real-time direct reading portable equipment using light scattering analysis. The concentration of BC was measured by aethalometer(filter-based real-time light absorption analysis instrument). Results: The geometric mean of respirable dust was the highest at vacuum cleaning as 74.4 ㎍/m³, following by replacing seat covers as 49.3 ㎍/m³ and cabin general cleaning as 47.8 ㎍/m³ . The arithmetic mean of PM2.5 was 4.83 ~ 9.89 ㎍/m³ inside the cabin, and 28.5~44.5 ㎍/m³ outside the cabin(from bus and outdoor waiting space). From size distribution, PM_2.5/PM₁₀ ratio was 0.54 at quick transit cleaning and 0.41 at replacing seat covers. The average concentration of BC was 2~7 ㎍/m³, showing a high correlation with the PM2.5 concentration. Conclusions: The hazards concentration levels of aircraft cabin cleaners were very similar to those of roadside outdoor workers. As the main source of pollution is estimated to be diesel vehicles operating at airports, and it is necessary to replace older vehicles, strengthen pollutant emission control regulations, and introduce electric vehicles. In addition, it is necessary to provide as part of airport-inftastructure a stable standby waiting space for aircraft cabin cleaners and introduce a systematic safety and health management system for all workers in the aviation industry.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2002년도 춘계학술발표논문집 (상)
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• pp.631-634
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• 2002

In this paper we improved that hump occurrence by increased oxidation thickness, and control field oxide recess$(\leq20nm)$, wet oxidation etch time(19HF, 30sec), STI nitride wet cleaning time(99 HF, 60sec + P 90min) and gate pre-oxidation cleaning time(U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• 한국시뮬레이션학회논문지
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• 제11권1호
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.