• Journal of Conservation Science
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• v.27 no.3
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• pp.333-344
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• 2011

Cleaning of foreign matter and corrosion products on surface among conservation treatment of iron artifacts is an important part for looking up a original form. The sand blaster is the most popular equipment when it removes the foreign matter and corrosion products on iron artifacts surface. Current foreign matter and corrosion products equipment, which mostly uses, is sand blaster. Glass dust which sprayed from sand blaster is harmful and causing environmental pollution. In order to solve these problems, we investigated the $CO_2$ snow cleaning that use a eco-friendly equipment to apply for cleaning foreign matter and corrosion products on surface of iron artifacts. It examined by using sand blaster and $CO_2$ snow cleaning to aged steel coupon and iron artifacts. In case of aged steel coupon, the result showed that the sand blaster and $CO_2$ snow cleaning methods were similar to the degrees of cleaning foreign matter and corrosion products, through surface roughness, color measurement and SEM. $CO_2$ snow cleaning applied to aged steel coupons weren't worn out the surface in comparison with sand blaster by SEM. When applied to the iron artifacts, power nozzle of the $CO_2$ snow cleaning was an excellent cleaning effect that surface wern't worn out in comparison with sand blaster. And, it showed that internal structure change of metal was no found before and after cleaning by X-ray radiography. Consequently, we confirmed that cleaning of the sand blaster and power nozzle of $CO_2$ snow cleaning were similar to the effect. But, it's very careful to use this method because of high outlet pressure of power nozzle for applying to the iron artifacts. As a result of experiments, it could be found that the cleaning methods should be selected depending on internal state of the artifacts.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.8-14
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• 1997

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.

• Journal of Power System Engineering
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• v.14 no.1
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• pp.22-26
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• 2010

Generally, it is a method to remove the fouling cleaning the plate heat exchanger with chemicals or polishing with a brush or cloth after stopping the equipment and disassembling heat exchanger. However, the equipment must be stopped and taken apart when using this method, which causes an unnecessary work to assemble again after cleaning it. In this study, it has developed and tested the equipment which can automatically clean the fouling on plate heat exchanger at regular intervals with air bubbles. It indicated that the overall heat transfer coefficient had decreased without significant differences similar to that calculated without air bubbles until after 72 hours when making air bubbles to remove fouling ingredient on the surface of heat transfer area every 10 minutes per 2 hours. However, it showed that there was a 10% higher of heat transfer effect compared to the case without air bubbles of after 192 hours.

• The Transactions of the Korea Information Processing Society
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• v.7 no.1
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• pp.115-125
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• 2000

In this paper, we suggest the basic components of monitoring system for the semiconductor wafer cleaning equipment and a monitoring system model based on these components. Basic component is defined as a mandatory function which consists of communication with the control system, user interface, communication with the remote monitoring system, management of monitoring data and inter-task communication. We have defined the function of each component and the relation among them, and designed each component as a task. To evaluate the validity of the suggested model, we have implemented the basic components using the Visual C++ on Windows NT and applied them to the Monitoring System for the semiconductor wafer cleaning equipment.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.42 no.5
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• pp.31-40
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• 2005

In this study, we study measurement of wafer processing throughput and sequence simulation of single wafer type for wafer cleaning equipments that were used for etching, cleaning and polishing of wafer. Based on finite state machine, simulation model was built with identification of robot's status according to scheduling algorithm. Moreover, through performance of simulation as above, throughput per hour of cleaning equipment was measured. By the simulation method that are proposed in this paper, we could measure the wafer throughput per hour according to recipe and robot motion speed, and find optimal recipe and moving sequence of robot that maximize the throughput.

• Journal of the Korean Society of Visualization
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• v.19 no.3
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• pp.123-129
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• 2021

Many plants and animals in nature have superhydrophobic surfaces. This superhydrophobic surface has various properties such as self-cleaning, moisture collection, and anti-icing. In this study, the superhydrophobic properties of PTFE surface were treated by plasma etching. There were four important factors that changed the surface properties. Micro-sized protrusions were formed by plasma etching. The most influential parameter was RF Power. The contact angle of the pristine PTFE surface was about 113.8°. The maximum contact angle of the surface after plasma treatment with optimized parameters was about 168.1°. In this case, the sliding angle was quite small about 1°. These properties made it possible to remove droplets easily from the surface. To verify the self-cleaning effect of the surface, graphite was used to contaminate the surface and remove it with water droplets. Graphite particles were easily removed from the optimized surface compared to the pristine surface. As a result, a surface having water repellency and self-cleaning effects could be produced with optimized plasma etching parameters.

• Korean Journal of Computational Design and Engineering
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• v.20 no.3
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• pp.291-297
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• 2015

A water jet cleaning robot system for micro drill bits is to refurbish micro drill bits used for the PCB manufacturing process. It can refurbish drill bits with the minimum diameter of ${\phi}0.15{\sim}0.075mm$ of which the total quantity have been discarded before. Micro drill bits with the minimum diameter of ${\phi}0.075mm$ can be cleaned by applying the water jet cleaning robot system out of the manual ultrasonic cleaning in the past for the cleaning equipment as the initial process in refurbishing. This study analyzed problems, while applying the apparatus mechanism for the workability such as the robot traces of Transfer Robot I and II, drill bit loading and unloading, and cleaning tasks in the water jet cleaning robot system in an effort to carry out simulations. In addition, the cleaning work process was optimized as the work process was verified in advance and the production quantity was analyzed through simulations.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.174-178
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• 2007

The cleaning process to remove small particles, ions, and other polluted sources is one of the major parts in the recent semiconductor industry because it can cause fatal errors on the quality of the final products. According to the other reports, the major factors of bath's fluid motion are the cleaning method, nozzle, the geometry (of bath, guide and wafer), and the position (of guide and wafer). So to enhance cleaning efficiency in the bath, these factors must be controlled. The purpose of this study is to analyze and visualize fluid motion in the cleaning bath as basic data for designing the nozzle system and finding the process control parameters. For that, we used the general CFD code FLUENT.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.612-618
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• 2020

In recent years, the demand for external window cleaning has increased, but the process is a very dangerous manpower-dependent operation. In addition, it is difficult to clean at the desired frequency in a business that values cleanliness. Therefore, there is a need to automate this work. This paper presents the concept of a device that can be attached to a specific window and clean the window continuously. The economic feasibility of this device was analyzed. The estimated manufacturing cost of the equipment was approximately 10 million won, but the possible investment cost was at least 9.8 million won for five years of endurance and 103 million won for 10 years of endurance. Therefore, the expected savings well exceed the equipment cost, and it was evaluated as having economic feasibility. Since this study analyzed only quantitative indicators, the expected cost reduction due to a reduction in safety accidents, productivity improvement, construction time reduction, and quality improvement was not considered. Therefore, it is expected that the calculated economic feasibility will be more accurate if the cost reduction effect by the automation equipment is calculated by adding the expected values not considered in this study.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.139-144
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• 2011

CMP process is an essential element in the semiconductor product processes in Chemical Mechanical Polishing. Taken as a whole, CMP is one process, but concretely, it is a detail process which consists of polishing, cleaning, and so on. Especially, the polishing and cleaning are key points in the whole process. Polishing rate is the most important factor and is related with deposition of slurry in the polishing process. Each outlet velocities is the most important factors in cleaning process. And when the velocities are more uniform, the cleaning becomes more effective. In this research, based on these factors, we performed a numerical analysis for effective polishing and cleaning which can be applied to industrial field. Consequently, we figured out that more than one opened nozzle is more effective than one opened nozzle at the polishing pad in case of this research. And we confirmed that the revised models have the uniform velocity distribution more than the previous model of the cleaning nozzle.