• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.12
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• pp.1-6
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• 2008

In this paper, bias control circuit structure have been employed to improve the power added efficiency of the CMOS class-E power amplifier on low input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal. The proposed CMOS class-E power amplifier using bias controlled circuit has been improved the PAE on low output power level. The operating frequency is 2.14GHz and the output power is 22dBm to 25dBm. In addition to, it has been evident that the designed the structure has showed more than a 80% increase in PAE for flatness over all input power level, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.41-45
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• 2014

In this paper, a high-efficiency power amplifier is implemented by using a drain bias control circuit operated at low input power for WPT(Wireless Power Transfer). Adaptive bias control circuit was added to high-efficiency class-E amplifier. It was possible to obtain the overall improvement in efficiency by adjusting the drain bias at low input power. The proposed adaptive class-E amplifier is implemented by using the input and output matching network and serial resonant circuit for improvement in efficiency. Drain bias control circuit consists of a directional coupler, power detector, and operational amplifier for adjusting the drain bias according to the input power. The measured results show that output powers of 41.83 dBm were obtained at 13.56 MHz. At this frequency, we have obtained the power added efficiency(PAE) of 85.67 %. It was confirmed increase of PAE of an average of 8 % than the fixed bias from the low input power level of 0 dBm ~ 6 dBm.

• Journal of Advanced Navigation Technology
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• v.24 no.2
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• pp.107-114
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• 2020

A power amplifier of 2.4 GHz ISM band is designed to implement a transmitter system. High efficiency amplifiers can be implemented as class E or class F amplifiers. This study has designed a 20 W high efficiency class E amplifier that has simple circuit structure in order to utilize for the ISM band application. The impedance matching circuit was designed by class E design theory and circuit simulation. The designed amplifier has the output power of 44.2 dBm and the power added efficiency of 69% at 2.45 GHz. In order to apply 30 dBm input power to the designed power amplifier, voltage controlled oscillator (VCO) and driving amplifier have been fabricated for the input feeding circuit. The measurement of the power amplifier shows 43.2 dBm output and 65% power added efficiency. This study can be applied to the design of power amplifiers for various wireless communication systems such as wireless power transfer, radio jamming device and high power transmitter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.2
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• pp.295-300
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• 2005

In this paper we have designed a two-stage Class I power amplifier operated at 2.4CHz for Class-1 Bluetooth application. The power amplifier employs class-I topology to exploit its soft-switching property for high efficiency. The latch-structured pre-amplifier with amplifiers makes its output signal as sharp as possible for soft switching of the next power amplifier. It improves the overall efficiency of the proposed power amplifier. It shows 65.8$\%$ PAE, 20dB power gain and 20dBm output power.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.79-81
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• 2007

본 논문에서는 소나용 고출력 전력증폭기의 효율을 향상시키기 위하여 Class E 설계 기법을 분석하고 소나 시스템의 송신기에 적용하였다. Class E 기법에 기반하여 전력소자를 스위칭 모드로 동작시켜서 Zero Voltage Switching(ZVS)이 발생하도록 회로를 설계함으로써 전력 소자의 전력 손실을 최소화하고 전력 증폭기의 효율을 최대화하여 주었다. 설계된 Class E 기법의 전력 증폭기의 동작 및 타당성을 시뮬레이션을 통하여 검증하였다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.2
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• pp.85-89
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• 2011

In this paper, a novel Class-E power amplifier using metamaterials has been realized with one RF LDMOS diffusion metal-oxide-semiconductor field effect transistor. The CRLH structure can lead to metamaterial transmission line with the Class-E power amplifier tuning capability. The CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Also, the proposed power amplifier has been realized by using the CRLH structure in the output matching network for better efficiency. Operating frequencies are chosen at 13.56 MHz in this work. The measured results show that the output power of 39.83 dBm and the gain of 11.83dB was obtained. At this point, we have obtained the power-added efficiency (PAE) of 73 % at operation frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.1
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• pp.83-88
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• 2007

The reliability characteristics of class-E RF power amplifier are studied, based on the degradation of MOSFET electrical characteristics. The class-E power amplifier operates as a switch mode operation to achieve high efficiency. This operation leads to high voltage stress when MOSFET switch is turned-off. The increase in threshold voltage and decrease in nobility caused by high voltage stress leads to a drop in the drain current. In the class-E power amplifier the effects caused by the degradation of MOSFET drain current is a drop of the power efficiency and output power. But the small inductor in the class-E load network allows the reliability to be improved. After $10^{7}\;sec$. the drain current decreases 46.3% and the PAE(Power Added Efficiency) decreases from 58% to 36% when the load inductor is 1mH. But when the load inductor is 1nH the drain current decreases 8.89% and the PAE decreases from 59% to 55%.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.43-46
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• 2012

In this paper, high efficiency power amplifier is implemented with high gain amplifier. Two-stage amplifier using adaptive bias control circuit improve efficiency at low input power. Fixed bias circuit and adaptive bias circuit both have about 76 % efficiency at maximum power level. However amplifier using an adaptive bias control circuit has 70 % at 6 dBm input power level when the amplifier using fixed bias circuit has 50%. The proposed power amplifier using the adaptive bias control circuit can have high efficiency at lower power level.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.593-596
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• 2015

In this paper, we design a high efficiency class E power amplifier operating at low drain bias voltage for wireless power transfers. A 13.56 MHz power amplifier is designed at drain bias voltage of 12.5 V using Si MOSFET with the breakdown voltage of 40 V. High quality-factor solenoidal inductor is designed and fabricated for use in output matching circuit to improve output power and efficiency. Input matching circuit simply consists of resistor and inductor to reduce the circuit area and improve the stability. The fabricated power amplifier shows the measured output power of 38.6 dBm with the gain of 16.6 dB and power added efficiency of 89.3 % at 13.56 MHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.2
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• pp.72-75
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• 2012

In this paper, high-efficiency DC-AC converter is implemented for the wireless power transmission. The DC-AC converter is implemented by combining the oscillator and power amplifier. Because the conversion efficiency of wireless power transmitter is strongly affected by the efficiency of power amplifier, the high-efficiency power amplifier is implemented by using the Class-E amplifier structure. Also, because the output power of oscillator connected to the input stage of power amplifier is low, high-gain two-stages power amplifier using the drive amplifier is implemented to realize the high-output power DC-AC converter. The dual band harmonic suppression filter is implemented to suppress 2nd, 3rd harmonics of 13.56 MHz. The output power and conversion efficiency of DC-AC converter are 40 dBm and 80.2 % at the operation frequency of 13.56 MHz.