• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.40 no.1
• /
• pp.9-15
• /
• 2015

A CMOS band-pass delta-sigma modulator(BPDSM) and cascode class-E power amplifier have been developed CMOS for Class-S power amplifier applications. The BPDSM is operating at 1-GHz sampling frequency, which converts a 250-MHz sinusoidal signal to a pulse-width modulated digital signal without the quantization noise. The BPDSM shows a 25-dB SQNR(Signal to Quantization Noise Ratio) and consumes a power of 24 mW at an 1.2-V supply voltage. The class-E power amplifier exhibits an 18.1 dBm of the maximum output power with a 25% drain efficiency at a 3.3-V supply voltage. The BPDSM and class-E PA were fabricated in the Dongbu's 110-nm CMOS process.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.44 no.3 s.357
• /
• pp.92-97
• /
• 2007

Switching mode amplifiers have been studied widely for use at microwave frequency range, and the class E amplifier which is a type of switching mode amplifier offers very high efficiency approaching 100%. In this paper, 2.4GHz microwave class E amplifier with 66% power added efficiency (PAE) and 17.6dBm output has been linearized for use at wireless LAN transmitter, and digital predistortion technique with look up table is applied. With -3dBm input power of wireless LAN, measured output spectrum can meet the required IEEE 802.11g standard spectrum mask, and the digital predistortion output spectrum has been improved by 5dB of ACPR at 20MHz offset from center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.6
• /
• pp.593-596
• /
• 2015

In this paper, we design a high efficiency class E power amplifier operating at low drain bias voltage for wireless power transfers. A 13.56 MHz power amplifier is designed at drain bias voltage of 12.5 V using Si MOSFET with the breakdown voltage of 40 V. High quality-factor solenoidal inductor is designed and fabricated for use in output matching circuit to improve output power and efficiency. Input matching circuit simply consists of resistor and inductor to reduce the circuit area and improve the stability. The fabricated power amplifier shows the measured output power of 38.6 dBm with the gain of 16.6 dB and power added efficiency of 89.3 % at 13.56 MHz.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.43 no.8 s.350
• /
• pp.91-96
• /
• 2006

High efficiency switching mode circuits such as class I amplifiers have been well known in the MHz frequency range. The class E amplifier is a type of switching mode amplifier offering very high efficiency approaching 100%. In this paper, the class E amplifier has been designed by using the harmonic balance method of circuit simulator. The designed amplifier is realized by using pHEMT and microstrip line, shows 66% power added efficiency (PAE) at 2.4GHz with 17.6dBm output power. With -3dBm input power of wireless LAN, measured output spec01m can meet the required IEEE 802.11g standard spectrum mask. That means the required amplifier back off of 9dB from $P_{ldB}$ to satisfy the required wireless LAN spectrum mask.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.48 no.2
• /
• pp.85-89
• /
• 2011

In this paper, a novel Class-E power amplifier using metamaterials has been realized with one RF LDMOS diffusion metal-oxide-semiconductor field effect transistor. The CRLH structure can lead to metamaterial transmission line with the Class-E power amplifier tuning capability. The CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Also, the proposed power amplifier has been realized by using the CRLH structure in the output matching network for better efficiency. Operating frequencies are chosen at 13.56 MHz in this work. The measured results show that the output power of 39.83 dBm and the gain of 11.83dB was obtained. At this point, we have obtained the power-added efficiency (PAE) of 73 % at operation frequency.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.9
• /
• pp.41-45
• /
• 2014

In this paper, a high-efficiency power amplifier is implemented by using a drain bias control circuit operated at low input power for WPT(Wireless Power Transfer). Adaptive bias control circuit was added to high-efficiency class-E amplifier. It was possible to obtain the overall improvement in efficiency by adjusting the drain bias at low input power. The proposed adaptive class-E amplifier is implemented by using the input and output matching network and serial resonant circuit for improvement in efficiency. Drain bias control circuit consists of a directional coupler, power detector, and operational amplifier for adjusting the drain bias according to the input power. The measured results show that output powers of 41.83 dBm were obtained at 13.56 MHz. At this frequency, we have obtained the power added efficiency(PAE) of 85.67 %. It was confirmed increase of PAE of an average of 8 % than the fixed bias from the low input power level of 0 dBm ~ 6 dBm.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2005.11a
• /
• pp.87-90
• /
• 2005

High-efficiency switched-mode circuits such as the class-E amplifier are well-known in the MHz frequency range. The class-E amplifier is a type of switching mode amplifier offering very high efficiency approaching 100%. In this paper of the class-E amplifier by using pHEMT device, the design has been done theoretically and experimentally, with simulation by using the harmonic balance method using circuit simulator. The amplifier using microstrip circuit and the pHEMT demonstrate 66% power-added- efficiency (PAE) at 2.4GHz with 17.6dBm of output power.

• Journal of Advanced Navigation Technology
• /
• v.27 no.6
• /
• pp.849-854
• /
• 2023

In this paper, a high-efficiency power amplifier was designed by applying the operating point Class J using LDMOS(laterally diffused metal oxide semiconductor) and optimizing the output matching circuit so that the second harmonic impedance becomes the reactance impedance. The designed power amplifier has a frequency of 108 ~ 110 MHz, Characteristics of PAE(power added efficiency) is 71.5% at P_SAT output (54.5 dBm), 55.5% at P_1dB output (51.5 dBm), and 24.38% at 45 dBm. The CSB(carrier with sideband) amplifier, which is the reference signal in the spatial modulation method, has an operating output of 45 dBm ~ 35 dBm, and linear SDM(sum in the depth of modulation) characteristics(40% ± 0.3%) were obtained. We measure the characteristics in amplitude modulation according to the bias operating point of the power amplifier for CSB and propose the optimal operating point to obtain linear modulation characteristics.

• ETRI Journal
• /
• v.34 no.6
• /
• pp.885-891
• /
• 2012

This paper proposes a high-efficiency power amplifier (PA) with uneven bias. The proposed amplifier consists of a driver amplifier, power stages of the main amplifier with class AB bias, and an auxiliary amplifier with class C bias. Unlike other CMOS PAs, the amplifier adopts a current-mode transformer-based combiner to reduce the output stage loss and size. As a result, the amplifier can improve the efficiency and reduce the quiescent current. The fully integrated CMOS PA is implemented using the commercial Taiwan Semiconductor Manufacturing Company 0.18-${\mu}m$ RF-CMOS process with a supply voltage of 3.3 V. The measured gain, $P_{1dB}$, and efficiency at $P_{1dB}$ are 29 dB, 28.1 dBm, and 37.9%, respectively. When the PA is tested with 54 Mbps of an 802.11g WLAN orthogonal frequency division multiplexing signal, a 25-dB error vector magnitude compliant output power of 22 dBm and a 21.5% efficiency can be obtained.

• Journal of Advanced Navigation Technology
• /
• v.9 no.2
• /
• pp.164-169
• /
• 2005

In this paper, the high efficiency Doherty power amplifier using adaptive bias technique has been designed and realized for 2.3GHz Wibro applications. The RF performances of the Doherty power amplifier using adaptive bias technique have been compared with those of a class AB amplifier alone, and conventional Doherty amplifier. The Maximum PAE of designed Doherty power amplifier with adaptive bias technique has been 36.6% at 34.0dBm output power. The proposed Doherty power amplifier showed an improvement 1dB at output power and 7.6% PAE than a class AB amplifier alone.