• Title/Summary/Keyword: Circuit simulation

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Analytical and numerical simulation on charging behavior of no-insulation REBCO pancake coil

  • Quach, Huu Luong;Kim, Ji Hyung;Chae, Yoon Seok;Moon, Jae Hyung;Ko, Jung Hyup;Kim, Hyung-Wook;Kim, Seog-Whan;Jo, Young-Sik;Kim, Ho Min
    • Progress in Superconductivity and Cryogenics
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    • v.20 no.4
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    • pp.16-19
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    • 2018
  • This paper presents analytical and numerical simulation approaches on charging characteristics of no-insulation (NI) REBCO pancake coil by using the equivalent circuit model to estimate magnetic performance response in the coil. The analytical methods provide closed form or definite solution in the form of complete mathematical expressions but they are hard to solve the complex problems. Numerical methods have become popular with the development of the computing capabilities to solve the problems which are impossible or very hard to solve analytically. First of all, the equivalent circuit model are proposed to develop the simulation code for both analytical and numerical method. The charging test was performed under critical current to obtain magnetic field induced and terminal voltage through the radial as well as spiral current paths within the coil. To verify the validity of both proposed methods, the simulation results were compared and discussed with the experimental results.

Simulation of Microwave Integrated Circuit on Multilayered Resistive Substrats using Wave Concept Iterative Procedure

  • Akatimagool, Somsak
    • Proceedings of the IEEK Conference
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    • 2002.07a
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    • pp.515-518
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    • 2002
  • This paper presents the iterative procedure with the concept of expanded waves in the spectral and spatial domains using the fast modal algorithm. We presents its applications to microwave integrated circuits on resistive substrate. The advantage is a reduction in computation time. These calculated results are checked by comparison with the experimental and simulated results by Sonnet and Momentum program.

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Fuzzy Hardware Implementation using the Hausdorff Distance (Hausdorff Distance를 이용한 퍼지 하드웨어 구현)

  • 김종만;변오성;문성룡
    • Proceedings of the IEEK Conference
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    • 2000.06d
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    • pp.147-150
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    • 2000
  • Hausdorff distance(HD) commonly used measures for object matching, and calculates the distance between two point set of pixels in two-dimentional binary images without establishing correspondence. And it is realized as the image filter applying the fuzzy. In this paper, the fuzzy hardware realizes in order to construct the image filter applying HD, also, propose as the method for the noise removal using it in the image. MIN-MAX circuit designs the circuit using MAX-PLUS, and the fuzzy HD hardware results are obtained to the simulation. And then, the previous computer simulation is confirmed to the result by using MATLAB.

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Timing Analysis Techniques Review for sub-30 nm Circuit Designs

  • Kim, Ju-Ho;Han, Sang-Woo;Jewell, Roy
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.4
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    • pp.292-299
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    • 2010
  • With scaled technology, timing analysis of circuits becomes more and more difficult. In this paper, we review recently developed circuit simulation techniques created to deal with the cost issues of transistor-level simulations. Various techniques for fast SPICE simulations and Monte Carlo simulations are introduced. Moreover, process and aging variation issues are mentioned, along with promising methodologies.

Hot carrier effects on the performance degradation of sense amplifiers in DRAM (Hot carrier 현상에 의한 DRAM 감지증폭기의 성능저하)

  • 윤병오;장성준;유종근;정운달;박종태
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.433-436
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    • 1998
  • Hot carrier induceed the performance degradation of sense amplifier circuit in DRAM has been measured and analyzed using 0.8.mu.m CMOS process. Simulation and experimental results show that the degradation of the MOS devices affects the decrease of the half-Vcc, voltage gain and the increase of the sensing voltage gain and the increase of the sensing voltage. The dominant degradation mechanism is the capacitance imblance in the bit-line pair. We carried out the spice simulation to investigate the degradation of the sense amplifier circuit.

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New Dynamic Logic Gate Design Method for Improved TFT Circuit Performance

  • Jeong, Ju-Young;Kim, Jae-Geun
    • Journal of Information Display
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    • v.6 no.1
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    • pp.17-21
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    • 2005
  • We explored a new way of designing dynamic logic gates with low temperature polysilicon thin film transistors to increase the speed. The proposed architecture of logic gates utilizes the structural advantage of smaller junction capacitance of thin film transistors. This method effectively blocks leakage of current through the thin film transistors. Furthermore, the number of transistors used in logic gates is reduced thereby reducing power consumption and chip area. Through HSPICE .simulation, it is confirmed that the circuit speed is also improved in all logic gates designed.

Simulation of three-phase symmetrical squirrel cage induction motors with double rotor bars (대칭3상2중롱형유도전동기의 시뮬레이션)

  • 임달호;이은웅;장석명;구태만
    • 전기의세계
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    • v.30 no.6
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    • pp.366-374
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    • 1981
  • In most cases, simulation of induction machines under dynamic conditions have been based on two-phase models using constant circuit parameters. Squirrel cage induction machines with double rotor bars which are made for high starting torgue have lower rotor bars of sufficient depth they cannot be accurately represented by a constant rotor resistance under all operating condition. In this paper, the circuit of three-phase symmetrical induction machines is represented in two-axis model by tensor. A method for simulating three-phase squirrel cage induction machines in a dynamic conditions is presented, and the current distribution in double rotor bars is calculated under dynamic conditions.

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The Analysis of Inverter Circuit with Induction Heating Load (유도가열 부하를 갖는 인버터 회로의 해석에 관한 연구)

  • Roh, H.S.;Kwon, K.A.;Yang, W.J.
    • Proceedings of the KIEE Conference
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    • 1995.07a
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    • pp.424-427
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    • 1995
  • This paper proposes an analysis of an inverter circuit which has an induction heating load. Two major kinds of the inverters are E-class quasi resonant and half-bridge type. The analyses of induction heating load property and operation property are introduced. A simulation program which implements those properties is also introduced. The results of the simulation program are verified through experimental results.

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UHF Band Multi-layer VCO Design Using RF Simulator (RF 시뮬레이터를 이용한 UHF대역 다층구조 VCO 설계)

  • Rhie, Dong-Hee;Jung, Jin-Hwee
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.96-99
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    • 2001
  • In this paper, we present the simulation results of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonator, the oscillator and the buffer circuit. using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of the conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated using the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont 951AT, which will be applied for LTCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5[dBm], the phase noise was -104[dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of 9.5[mA]. The size of VCO is $6{\times}9{\times}2mm$(0.11[cc]).

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The Study on the One-stage PFC-flyback Converter using the Soft Switching Technique (소프트 스위칭 기법을 이용한 1단 PFC-flyback 컨버터)

  • Lee, Sang-Hyeok;Hwang, Jung-Goo;Park, Sung-Jun
    • The Transactions of the Korean Institute of Power Electronics
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    • v.18 no.3
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    • pp.263-269
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    • 2013
  • The flyback converter has been applied widely in isolated DC/DC power converters because this converters employ a single MOSFET switch. The leakage inductance should be minimized for high efficiency of flyback converter. but in reality, it is very difficult. Namely, The Snubber circuit is essential to recover the leakage inductance stored energy when the switch is turn off. Flyback Converter typically operates in DCM mode and when switch is turn off in hard switching, this hard switching action results in a high power losses and switching stresses. In order to overcome these problems, a novel soft switching flyback converter using resonant snubber circuit is proposed in this paper. The resonant snubber circuit is composed of the transformer leakage inductance and a capacitor. To verify and confirm the proposed resonant snubber circuit, PSIM simulation and hardware prototype are implemented. Simulation and Experimental results indicate that the proposed resonant snubber circuit is effective.