• Korean Journal of Materials Research
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• v.8 no.9
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• pp.837-842
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• 1998

As the size of the integrated circuit is scaled down the importance of Si cleaning has been emphasized. One of the major concerns is abut the removal of metallic impurities such as Cu and Fe on Si surface. In this study, we intentionally contaminated Cu and Fe on the Si wafers and cleaned the wafer by cleaning splits of the chemical mixture of $\textrm{H}_2\textrm{O}_2$ and HF and the combination of HF treatment with UV/$\textrm{O}_3$ treatment. The contamination level was monitored by TXRF. Surface microroughness of the Si wafers was measured by AFM. The Si wafer surface was examined by SEM. AES analysis was carried out to analyze the chemical composition of Cu impurities. The amount of Cu impurities after intentional contamination was abut the level of $\textrm{10}^{14}$ atoms/$\textrm{cm}^2$. The amount of Cu was decreased down to the level of $\textrm{10}^{10}$ atoms/$\textrm{cm}^2$ by cleaning splits. The repeated treatment exhibited better Cu removal efficiency. The surface roughness caused by contamination and removal of Cu was improved by repeated treatment of the cleaning splits. Cu were adsorbed on Si surface not in a thin film type but in a particle type and its diameter was abut 100-400${\AA}$ and its height was 30-100${\AA}$. Cu was contaminated on Si surface by chemical adsorption. In the case of Fe the contamination level was $\textrm{10}^{13}$ atoms/$\textrm{cm}^2$ and showed similar results of above Cu cleaning. Fe was contaminated on Si surface by physical adsorption and as a particle type.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.11
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• pp.5879-5884
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• 2013

With the rapid industrialization and economical development, the electricity demands of the industrial facilities and densely populated large cities are continuing to increase in Korea. The increase in the power consumption requires the extension of power facilities, but it is difficult to secure spaces for equipment installation in the limited space of urban areas. In addition, the 154 kV or 345 kV transmission systems in Korea has a short transmission distance, and are connected to one another in network structures that ensure the high reliability and stability of power supply. This structure reduces the impedance during the fault in power system, and increases the magnitude of in the short circuit fault current. The superconducting fault current limiter (SFCL) was devised to effectively address these existing problems. The SFCL is a new-concept eco-friendly protective device that ensures fast operation and recovery time for the fault current and does not need additional fault detection devices. Therefore, many studies are being conducted around the world. In this paper, based on the wiring method the initial fault current characteristics, current limiting characteristics, according to the incident angle and the change in inductance current limiting characteristics were analyzed in a multifaceted methods.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.12
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• pp.502-512
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• 2019

To examine the problem structure of balanced regional development policy and identify the causes of the gap between the capital and non-capital areas, this study examined the causal structure in terms of the concentration and distribution of functions in the metropolitan area and non-capital area and explored the policy leverage. As a research method, the causal map was drawn using System Dynamics techniques and policy leverage was derived through an exploration of the feedback structure. In particular, the causes of the problems in balanced regional development policies were approached by system accidents rather than by single-circuit accidents, and causality analysis was performed among the variables constituting balanced regional development policies based on system accidents. In particular, it singled out 31 variables, developed 13 feedback loops, and confirmed four major policy leverages, including relocation of the capital function, local decentralization policies, consistent development, and investment practices centered on the Non­Capital Area. Subsequently, a follow-up study by computer simulation is needed by modeling the structure of the system to identify the ripple effect of the policies of the Capital Area on the Non­Capital Area.

• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.1
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• pp.54-62
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• 2013

In this study, a wireless and non-power SAW (surface acoustic wave) temperature sensor was developed. The single inter-digital transducer (IDT) of SAW temperature sensor of which resonance frequency is 434 MHz was fabricated on $128^{\circ}$ rot-X $LiNbO_3$ piezoelectric substrate by semiconductor processing technology. To find optimal acoustic reflector for SAW temperature sensor, various kinds of acoustic reflectors were fabricated and their reflection characteristics were analyzed. The IDT type acoustic reflector showed better reflection characteristic than other reflectors. The wireless temperature sensing system consisting of SAW temperature sensor with dipole antenna and a microprocessor based control circuit with dipole antenna for transmitting signal to activate the SAW temperature sensor and receiving the signal from SAW temperature sensor was developed. The result with wireless SAW temperature sensing system showed that the frequency of SAW temperature sensor was linearly decreased with the increase of temperature in the range of 40 to $80^{\circ}C$ and the developed wireless SAW temperature sensing system showed the excellent performance with the coefficient of determination of 0.99.

• Journal of Biosystems Engineering
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• v.42 no.4
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• pp.350-357
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• 2017

Purpose: In-situ monitoring of water quality is fundamental to most environmental applications. The high cost and long delays of conventional laboratory methods used to determine water quality, including on-site sampling and chemical analysis, have limited their use in efficiently managing water sources while preventing environmental pollution. The objective of this study was to develop an on-site water monitoring system consisting mainly of an Arduino board and a sensor array of multiple ion selective electrodes (ISEs) to measure the concentration of $NO_3$ ions. Methods: The developed system includes a combination of three ISEs, double-junction reference electrode, solution container, sampling system consisting of three pumps and solenoid valves, signal processing circuit, and an Arduino board for data acquisition and system control. Prior to each sample measurement, a two-point normalization method was applied for a sensitivity adjustment followed by an offset adjustment to minimize the potential drift that could occur during continuous measurement and standardize the response of multiple electrodes. To investigate its utility in on-site nitrate monitoring, the prototype was tested in a facility where drinking water was collected from a water supply source. Results: Differences in the electric potentials of the $NO_3$ ISEs between 10 and $100mg{\cdot}L^{-1}$ $NO_3$ concentration levels were nearly constant with negative sensitivities of 58 to 62 mV during the period of sample measurement, which is representative of a stable electrode response. The $NO_3$ concentrations determined by the ISEs were almost comparable to those obtained with standard instruments within 15% relative errors. Conclusions: The use of the developed on-site nitrate monitoring system based on automatic sampling and two-point normalization was feasible for detecting abrupt changes in nitrate concentration at various water supply sites, showing a maximum difference of $4.2mg{\cdot}L^{-1}$ from an actual concentration of $14mg{\cdot}L^{-1}$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.8
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• pp.5541-5549
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• 2015

This paper introduces a safer and more power efficient heater by using induction heating, to apply to the semiconductor wafer fabrication exhaust gas cleaning system. The exhaust gas cleaning system is currently made with filament heater that generates an endothermic reaction of N2 gas for the removal of moisture. Induction theory, through the bases of theoretical optimization and electronic implementation, is applied in the design of the induction heater specifically for the semiconductor wafer exhaust system. The new induction heating design provides a solution to the issues with the current energy inefficient, unreliable, and unsafe design. A robust and calibrated design of the induction heater is used to optimize the energy consumption. Optimization is based on the calibrated ZVS induction circuit design specified by the resonant frequency of the exhaust pipe. The fail-safe energy limiter embedded in the system uses a voltage regulator through the feedback of the MOSFET control, which allows the system performance to operate within the specification of the N2 Heater unit. A specification and performance comparison from current conventional filament heater is made with the calibrated induction heater design for numerical analysis and the proof of a better design.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.961-966
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• 2003

A Multi-Layer Ceramic (MLC) chip type Band-Pass Filter (BPF) using BiNb$\_$0.975/Sb$\_$0.025/ $O_4$ LTCC (Low Temperature Co-fired Ceramics) and MLC processing is presented. The MLC chip BPF has the benefits of low cost and small size. The BPF consists of coupled stripline resonators and coupling capacitors. The BPF is designed to have an attenuation pole at below the passband for a receiver band of IMT-2000 handset. The computer-aided design technology is applied for analysis of the BPF frequency characteristics. The attenuation pole depends on the coupling between resonators and the coupling capacitance. An equivalent circuit and structure of MLC chip BPF are proposed. The frequency characteristics of the manufactured BPF is well acceptable for IMT-2000 application.

• Journal of the Korea Society of Computer and Information
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• v.18 no.3
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• pp.107-118
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• 2013

In this paper, we developed the semiconductor monitoring system for the etching process. Around the world, expert companies are competing fiercely since the semiconductor industry is a leading value-added industry that produces the essential components of electronic products. As a result, many researches have been conducted in order to improve the quality, productivity, and characteristics of semiconductor products. Process monitoring techniques has an important role to give an equivalent quality and productivity to produce semiconductor. In fact, since the etching process to form a semiconductor circuit causes great damage to the semiconductors, it is very necessary to develop a system for monitoring the process. The proposed monitoring system is mainly focused on the dry etching process using plasma and it provides the detailed observation, analysis and feedback to managers. It has the functionality of setting scenarios to match the process control automatically. In addition, it maximizes the efficiency of process automation. The result can be immediately reflected to the system since it performs real-time monitoring. UI (User Interface) provides managers with diagnosis of the current state in the process. The monitoring system has diverse functionalities to control the process according to the scenario written in advance, to stop the process efficiently and finally to increase production efficiency.

• Journal of the Korean Society of Marine Environment & Safety
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• v.21 no.6
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• pp.759-769
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• 2015

Diode rectifiers are very popular in industry. However, they include large low-order harmonics in the input current and do not satisfy harmonic current content restrictions. To reduce the harmonics to the power system, several methods have been introduced. It is heavy and expensive solution to use passive filters as the solution for high power application. Another solution for the harmonic filter is utilization of active filter, but it is too expensive solution. Diode rectifiers with configurations using switching device have been introduced, but they are very complicated. The combined 12-pulse diode rectifier with the square auxiliary voltage supply has been introduced. It has the advantages that auxiliary circuit is simple and inexpensive compared to other strategies. The advanced auxiliary voltage supply in this thesis is presented as a new solution. When the square auxiliary voltage supply applied, the improvement of THD is 6~60[%] in whole load range. But when the advanced auxiliary voltage supply applied, it shows stable and excellent reduction effect of THD as 57~71[%]. Especially, for the case with 10[%] load factor, reduction effect of THD has little effect as 6[%] in the case of inserting a square auxiliary voltage supply. But when the proposed new solution applied, reduction effect has excellent effect as 71[%]. Theoretical analysis of the combined 12-pulse diode rectifier with the advanced auxiliary voltage supply is presented and control methods of the auxiliary supply is proposed. The reduction in the input current harmonics is verified by simulation using software PSIM.