• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.55-56
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• 2009

Small RFID tag antenna were fabricated on Si substrate and their physical and electrical properties were evaluated. With decreasing the size of tag antenna on Si substrate, small SMD-type RFID tags could be fabricated, which is very useful for PCB tracking. Firstly, tag antenna pattern and the electromagnetic properties were simulated with HFSS. The frequency was 13.56MHz, the line-width and line-gap were modeled in the range of $50{\sim}200{\mu}m$. S parameters, SRF, and Q value were calculated from geometry. When the line-width and line-gap were 100um and the loop-turn was 10, the SRF was 80MHZ and the Q value was ca. 9. When the microstrip antenna pattern of aluminum was fabricated by using DC sputtering, Vpp of ca. 1.6V was obtained when the reader-tag distance was 40mm.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1198-1199
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• 2006

Type I clathrate $Ba_8Al_{16}Si_{30}$ was produced by arc melting and hot pressing and thermoelectric properties were investigated. Negative Seebeck coefficient at all temperatures measured, which means that the majority carriers are electrons. Electrical conductivity decreased by increasing temperature and thermal conductivity was 0.012 W/cmK at room temperature and dimensionless thermoelectric figure of merit (ZT) was 0.01 at 873K.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.292-296
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• 2003

In an attempt to enhance phase transformation and homogenization of Mn-doped $FeSi_2$, mechanical alloying of elemental powders was applied. Cold pressing and sintering in vacuum were carried out to produce a dense microstructure, and then isothermal annealing was employed to induce a phase transformation to the $\beta$-$FeSi_2$semiconductor. Phase transitions in this alloy system during the process were investigated by using XRD, EDS and SEM. As-milled powders after 100 h of milling were shown to be metastable state. As-sintered iron silicides consisted of untransformed mixture of $\alpha$-$Fe_2$$Si_{5}$and $\varepsilon$-FeSi phases. $\beta$-$FeSi_2$phase transformation was induced by subsequent isothermal annealing at $830^{\circ}C$, and near single phase of $\beta$-$FeSi_2$was obtained after 24 h of annealing. Thermoelectric properties in terms of Seebeck coefficient, and electrical conductivity were evaluated and correlated with phase transformation. Seebeck coefficient electrical resistivity and hardness increased with increasing annealing time due to $\beta$ phase transformation.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.21-25
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• 2009

By using Si CMOS process, small RFID tag antenna were fabricated on Si substrate and their electrical properties were evaluated. Firstly, tag antenna pattern and the electromagnetic properties were simulated with HFSS. The frequency was 13.56 MHz, the line-width and line-gap were modeled in the range of $50{\sim}200{\mu}m$. S parameters, SRF, and Q value were calculated from geometry. When the line-width and line-gap were $100{\mu}m$ and $100 {\mu}m$, respectively and the loop-turn was 10, the SRF was 80 MHZ and the Q value was ca. 9. When the microstrip antenna pattern of aluminum $2{\mu}m$ was fabricated by using DC sputtering, Vpp of ca. 4.3 V was obtained when the reader and tag were closely contacted.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.121-125
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• 2011

Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${\mu}m$ and a resistivity of 3 $\Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${\mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.844-849
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• 2011

Two kind of Ag-pastes were prepared for integrating the bulk Si solar cell. One is the Ag-paste with Pb-based glass frit and the other is that with Bi-based glass frit. The pastes were the mixture of 84 wt% Ag, 2 wt% glass frit, 11 wt% solvent of buthyl cabitol acetate, and 2 wt% additives. After fabricating the Ag-pastes, they was coated on a $SiN_x$/n+/p- stacks of a commercial mono-Si solar cell. The solar cell efficiency was 17.6% in the case of the Pb-based Ag-paste. However that was 16.2% in the solar cell integrated with the Bi-based Ag-paste. The lower performance in Bi-based Ag-paste was caused by the higher series resistance and the lower shunt resistance in comparison with the Pb-based Ag-paste.

• Journal of Adhesion and Interface
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• v.10 no.1
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• pp.30-34
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• 2009

The effect of pressure on the thermal conductivity in two-phase composite system was studied. Thermally conductive polypropylene (PP)/silicon carbide (SiC) composites were prepared by applying various pressures from 0 to 20 MPa. The thermal conductivity of the composite was 1.86 W/mK at 20 MPa, increased by 40% compared to the value of at 0 MPa. It was 9 times higher than that of unfilled polypropylene. It implies the pressure induces the easy path for phonon transport. Also, the experimental values were compared with Maxwell's prediction and Agari's prediction. Agari's prediction gave a better agreement compared to that of Maxwell's prediction due to the consideration of interactions between filler-filler and filler-polymer.

• Journal of Institute of Convergence Technology
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• v.9 no.1
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• pp.37-41
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• 2019

The government has designated the hydrogen industry as one of the three most innovative industries and is making a lot of investment and support. Chungcheongbuk-do and Chungju are developing strategies to foster local industries in line with these government policies. Hyundai Mobis's Chungju plant, located in Chungju, is the only fuel cell plant in Korea and is emerging as the center of hydrogen cars as the government's hydrogen mobility industry expands. Chungcheongbuk-do and Chungju City seek to attract relevant institutions and companies based on their regional strengths. In this paper, the current status of hydrogen industry in Chungcheongbuk-do and Chungju-si is discussed and future plans are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.766-772
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• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.