• Resources Recycling
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• v.22 no.2
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• pp.22-28
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• 2013

In the present study, the possibility of recovering and recycling the silicon carbide(SiC) from a silicon sludge by removing Fe and Si impurities was investigated. Si and SiC were separated from the silicon sludge using centrifugation. The separated SiC concentrate consisted of Fe, Si and SiC, in which Fe and Si were removed to recover the pure SiC. Leaching with acid/alkali solution was compared with the vapor-phase chlorination. The Fe concentration removed in the SiC was 49 ppm, and it was separated by leaching with 1 M HCl solution at $80^{\circ}C$ for 1 h. The Si concentration removed in the SiC was 860 ppm, and it was separated by leaching with 1M NaOH solution at $50^{\circ}C$ for 1 h. The SiC concentrate was chlorinated in a tubular reactor, 2.4 cm in diameter and 32 cm in length. The boat filled with SiC concentrate was located at the midpoint of the alumina tube, then, the chlorine and nitrogen gas mixture was introduced. The Fe and Si concentration removed in the SiC were 48 ppm and 405 ppm, respectively, at $500^{\circ}C$ reactor temperature, 4 h reaction time, 300 cc/min gas flow rate, and 10% $Cl_2$ gas mole fraction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.274-279
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• 2011

In this study, we investigated the analytical methods for bromine (Br) and chloride (Cl) with oxygen combustion bomb, using a halogen-containing polymer materials. On measuring Cl content, it showed less reproducibility of the results applying Mohr method or potentiometric titration method than those applying acid-base titration method. In both Br and Cl tests with an oxygen combustion bomb, their concentrations in the absorption and cleaning solution with distilled water were much higher than those in the combustion gas. On the other hand, the concentration level of Br measured by the oxygen combustion bomb method were a little bit lower than those measured by XRF or combustionion chromatography.

• Progress in Superconductivity
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• v.9 no.1
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• pp.96-101
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• 2007

[ $YBa_2Cu_3O_{7-{\delta}}$ ] films have been prepared on $LaAlO_3$ (100) single-crystal substrates by a metalorganic deposition using dichloroacetate precursors (DCA-MOD). Calcination conditions were varied in order to optimize the microstructure and the superconducting properties of YBCO film. Coated films were calcined at various temperatures ranging from $400{\sim}700^{\circ}C$ in flowing humid oxygen atmosphere. Ramping rate to calcination tempertures was $2.22^{\circ}C/min$. Conversion heat treatment was performed at $800^{\circ}C$ for 2 h in flowing Ar gas containing 1000 ppm oxygen with a humidity of 9.45%. Observations of surface and cross sectional SEM microstructure showed that the particle size in the calcined film increased in the range of 100-200 nm with heating rate and the calcination temperature. SEM EDS analysis showed that 13 a/o of chlorine was contained in the calcined film. It was also observed that the porosity increased with the heating rate and temperature. Porous microstructure was developed when YBCO films were prepared using porous calcined film. Dense microstructure and high $J_c$ over $1\;MA/cm^2$ was obtained when calcination was carried out at the temperature of $500^{\circ}C$ with a heating rate of $2.22^{\circ}C/min$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.263-263
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• 2013

This work examines the dynamic properties of ice surfaces in vacuum for the temperature range of 140~180 K, which extends over the onset temperatures for ice sublimation and the phase transition from amorphous to crystallization ice. In particular, the study focuses on the transport processes of excess protons and chloride ions in ice and their segregative behavior to the ice surface. These phenomena were studied by conducting experiments with a relatively thick (~100 BL) ice film constructed with a bottom $H_2O$ layer and an upper $D_2O$ layer, with excess hydronium and chloride ions trapped at the $H_2O$/$D_2O$ interface as they were generated by the ionization of hydrogen chloride. The migration of protons, chloride ions, and water molecules to the ice film surface and their H/D exchange reactions were measured as a function of temperature using the methods of low energy sputtering (LES) and Cs+ reactive ion scattering (RIS). Temperature programmed desorption (TPD) experiments monitored the desorption of water and hydrogen chloride from the surface. Our observations indicated that both hydronium and chloride ions migrated from the interfacial layer to segregate to the surface at high temperature. Hydrogen chloride gas desorbs via recombination reaction of hydronium and chloride ions floating on the surface. Surface segregation of these species is driven by thermodynamic potential gradient present near the ice surface, whereas in the bulk, their transport is facilitated by thermal diffusion process. The finding suggests that chlorine activation reactions of hydrogen chloride for polar stratospheric ice particles occur at the surface of ice within a depth of at most a few molecular layers, rather than in the bulk phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.200-200
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• 2013

기존 메모리 반도체에 비교해 빠른 재생속도와 높은 집적도, 비휘발성 등의 특성을 가지는 MRAM (Magnetic Random Access Memory)은 DRAM, flash memory 등을 대체할 수 있는 차세대 기억 소자로서 CoFeB/MgO/CoFeB로 구성된 한 개의 MTJ (Magnetic Tunnel Junction)를 단위 메모리로 사용한다. 이 MTJ 물질들은 고밀도 플라즈마를 이용한 건식 식각공정시 Cl2, BCl3 등과 같은 chlorine 을 포함한 가스를 이용하여 왔으나 식각 후 sidewall에서 발생하는 부식과 식각 선택비 확보의 어려움 등으로 마스크 물질에 제약을 받고 소자 특성이 감소하게 되는 등의 문제가 있다. 따라서 이러한 식각 문제점을 해결하기 위한 대안으로 noncorrosive 가스인 CO/NH3, CH3OH, CH4 등을 이용한 MTJ 식각 연구가 진행되어 오고 있으며 이중 CO/NH3 혼합가스는 부식성이 없고 hard mask와의 높은 선택비를 가지는 기체로 CO gas에 NH3 gas를 첨가하게 되면 etch rate이 증가하는 특성을 보인다. 또한 rf pulse-biased power를 이용하여 이온의 입사를 시간에 따라 제어함으로써 pulse off time 때 etch gas와 MTJ 물질간의 chemical reaction을 향상시킬 수 있다. 따라서 본 연구에서는 CO/NH3 혼합가스를 이용하여 다양한 rf pulse-biased power 조건에서 MTJ 물질인 CoFeB, MgO와 hard mask 물질인 W을 식각 한 뒤 식각특성을 분석하였으며 MTJ surface의 chemical binding state, surface roughness 측정을 진행하였다. 식각 샘플의 측정은 Alpha step profiler, XPS (X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy)를 통해 진행되었다. Time-averaged pulse bias에서는 duty ratio가 감소할수록 etch rate의 큰 감소 없이 CoFeB/W, MgO/W 물질의 etch selectivity가 향상됨을 확인할 수 있었으며 pulse off time 구간에서의 chemical reaction 향상으로 인해 식각부산물의 재증착이 감소하고 CoFeB의 surface roughness가 감소하는 것을 확인하였다.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.496-502
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• 1999

In this study, n-GaN samples were etched using planar inductively coupled $Cl_2$/$H_2$plasmas and the effects of plasma conditions on the etch properties, surface composition, and ohmic contact formation were investigated as a function of gas combination. As the addition of hydrogen to the $Cl_2$plasma increased to 100%, GaN etch rates decreased due to the reduction of chlorine radical density. Even though the variation of the surface composition is limited under $50\AA$, the surface composition was also changed from Ga-rich to N-rich with the increased addition of hydrogen to $Cl_2$. Etch products by the reaction between Ga in GaN and Cl in $Cl_2$ plasma were investigated using OES analysis during the GaN etching. The value of specific resistivity of the contact formed on the n-GaN etched using 100% $Cl_2$plasma was 3.1$\times$10\ulcorner$\Omega$$\textrm{cm}^2$, and which was lower than that formed on the non-etched n-GaN. However, the resistively was increased with the increased hydrogen percent in $Cl_2$/$H_2$.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.161-171
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• 1997

Anodic regeneration of PCB enchant and cathodic deposition of copper using electrochemical method has been studied. Cu(I)/Cu(II) concentration ratio as a function of Cu(I) oxidation at the anode was measured from the potential difference between platinum and Ag/AgCl/4M KCl electrodes. Chlorine gas evolution was minimized by maintaining Cu(I) concentration above a specific concentration and using non-porous graphite electrode. Dendritic copper deposition was observed at the cathode and the optimum conditions for Cu deposition was identified as the current density of $360mA/cm^2$, and copper concentration of 12 g/l. Titanium was the most effective cathode material which showed a higher current efficiency and copper recovery. The current efficiency decreased with increasing temperature, but the highest power efficiency was achieved at $50^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.328-329
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• 2012

$SF_6$ gas는 반도체 및 디스플레이 제조공정 중 Dry etch과정에서 널리 사용되는 gas로 자연적으로 존재하는 것이 아닌 사용 목적에 맞춰 인위적으로 제조된 gas이다. 디스플레이 산업에서 $SF_6$ gas가 사용되는 Dry etch 공정은 주로 ${\alpha}$-Si, $Si_3N_4$ 등 Si계열의 박막을 etch하는데 사용된다. 이러한 Si 계열의 박막을 식각하기 위해서는 fluorine, Chlorine 등이 사용된다. fluorine계열의 gas로는 $SF_6$ gas가 대표적이다. 하지만 $SF_6$ gas는 대표적인 온실가스로 지구 온난화의 주범으로 주목받고 있다. 세계적으로 온실가스의 규제에 대한 움직임이 활발하고, 대한민국은 2020년까지 온실가스 감축목표를 '배출전망치(BAU)대비 30% 감축으로' 발표하였다. 따라서 디스플레이 및 반도체 공정에는 GWP (Global warming Potential)에 적용 가능한 대체 가스의 연구가 필요한 상황이다. 온실가스인 $SF_6$를 대체하기 위한 방법으로 GWP가 낮은 $C_3F_6$가스를 이용하여 $Si_3N_4$를 Dry etching 방법인 RIE (Reactive Ion Etching)공정을 한 후 배출되는 가스를 측정하였다. 4인치 P-type 웨이퍼 위에 PECVD (Plasma Enhanced Chemical Vapor Deposition)장비를 이용하여 $Si_3N_4$를 200 nm 증착하였고, Photolithography공정을 통해 Patterning을 한 후 RIE공정을 수행하였다. RIE는 Power : 300 W, Flow rate : 30 sccm, Time : 15 min, Temperature : $15^{\circ}C$, Pressure : Open과 같은 조건으로 공정을 수행하였다. 그리고 SEM (Scanning Electron Microscope)장비를 이용하여 Etching된 단면을 관찰하여 단차를 확인하였다. 또한 Etching 전후 배출가스를 포집하여 GC-MS (Gas Chromatograph-Mass Spectrophotometry)를 측정 및 비교하였다. Etching 전의 경우에는 $N_2$, $O_2$ 등의 가스가 검출되었고, $C_3F_6$ 가스를 이용해 etching 한 후의 경우에는 $C_3F_6$ 계열의 가스가 검출되었다.

• Korean Journal of Food Science and Technology
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• v.29 no.3
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• pp.427-431
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• 1997

A simultaneous and rapid gas chromatographic determination of organophosphorus, organo-chlorine, carbamate, and pyrethroid pesticides in polished rice was developed. The pesticides were extracted from samples with acetone by automated soxhlet apparatus and this extract was evaporated to dryness. The residue was dissolved in hexane, the solvent was applied to a Sep-Pak florisil catridge, was eluted with 50% ethyl acetate in n-hexane, and was injected to dual GC-ECD/NPD system. This simple method affords a high recovery of hydrophilic pesticides, allows rapid analysis, and is cheap to perform. Except for dichlorvos and captan, recoveries of 46 pesticides were over 60%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.