• 제목/요약/키워드: Chlorine gas

검색결과 214건 처리시간 0.031초

염소처리가 밀가루의 리올로지 특성에 미치는 영향 (Effect of Chlorine Treatment on the Rheological Properties of Wheat Flour)

  • 한명규;장학길;신효선
    • 한국식품과학회지
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    • 제24권2호
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    • pp.127-131
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    • 1992
  • 밀가루의 리올로지 특성에 대한 염소처리의 영향을 연구하기 위하여 밀가루 100 파운드당 1, 2 및 4 oz의 액화염소가스를 각각 처리하여 각종 리올로지 특성의 변화를 비교하였다. Farinogram 특성에서 departure time, 수분흡수율, 안정도는 염소처리량 증가에 따라 점증적으로 증가하였으나 MTI는 감소하는 경향을 나타냈다. Extensogram 특성에서 염소처리하지 않은 밀가루는 신장도에 비하여 저항도가 큰 반면, 처리량이 1 oz와 2 oz는 적당한 신장도와 저항도를 갖고 있으므로 제빵에 적합한 반죽특성을 가졌다. Amylogram 특성에서 최고점도시 온도는 염소처리량 증가에 따라 거의 직선적으로 높아지는 경향을 나타냈다. 최고점도는 1 oz 처리시 다소 증가하였고 1 oz와 2 oz 처리는 처리량에 따른 변화는 없었다.

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He-Polymer Microchip Plasma (PMP) System Incorporating a Gas Liquid Separator for the Determination of Chlorine Levels in a Sanitizer Liquid

  • Oh, Joo-Suck;Kim, Y.H.;Lim, H.B.
    • Bulletin of the Korean Chemical Society
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    • 제30권3호
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    • pp.595-598
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    • 2009
  • The authors describe an analytical method to determine total chlorine in a sanitizer liquid, incorporating a lab-made He-rf-plasma within a PDMS polymer microchip. Helium was used instead of Ar to produce a plasma to achieve efficient Cl excitation. A quartz tube 1 mm i.d. was embedded in the central channel of the polymer microchip to protect it from damage. Rotational temperature of the He-microchip plasma was in the range 1350-3600 K, as estimated from the spectrum of the OH radical. Chlorine was generated in a volatilization reaction vessel containing potassium permanganate in combination of sulfuric acid and then introduced into the polymer microchip plasma (PMP). Atomic emission lines of Cl at 438.2 nm and 837.7 nm were used for analysis; no emission was observed for Ar plasma. The achieved limit of detection was 0.81 ${\mu}g\;mL^{-1}$ (rf powers of 30-70 W), which was sensitive enough to analyze sanitizers that typically contained 100-200 ${\mu}g\;mL^{-1}$ of free chlorine in chlorinated water. This study demonstrates the usefulness of the devised PMP system in the food sciences and related industries.

Corrosion at the Grain Boundary and a Fluorine-Related Passivation Layer on Etched Al-Cu (1%) Alloy Surfaces

  • Baek, Kyu-Ha;Yoon, Yong-Sun;Park, Jong-Moon;Kwon, Kwang-Ho;Kim, Chang-Il;Nam, Kee-Soo
    • ETRI Journal
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    • 제21권3호
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    • pp.16-21
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    • 1999
  • After etching Al-Cu alloy films using SiCl4/Cl_2/He/CHF3 mixed gas plasma, the corrosion phenomenon at the grain boundary of the etched surface and a passivation layer on the etched surface with an SF6 plasma treatment subsequent to the etching were studied. In Al-Cu alloy system, corrosion occurs rapidly on the etched surface by residual chlorine atoms, and it occurs dominantly at the grain boundaries rather than the crystalline surfaces. To prevent corrosion, the SF6 gas plasma treatment subsequent to etching was carried out. The passivation layer is composed of fluorine-related compounds on the etched Al-Cu surface after the SF6 treatment, and it suppresses effectively corrosion on the surface as the SF6 treatment pressure increases. Corrosion could be suppressed successfully with the SF6 treatment at a total pressure of 300 mTorr. To investigate the reason why corrosion could be suppressed with the SF6 treatment, behaviors of chlorine and fluorine were studied by various analysis techniques. It was also found that the residual chlorine incorporated at the grain boundary of the etched surface accelerated corrosion and could not be removed after the SF6 plasma treatment.

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Chlorine-based 유도결합 플라즈마를 이용한 PST 박막의 건식 식각 특성 (Dry etching properties of PST thin films using chlorine-based inductively coupled plasma)

  • 김관하;김경태;김동표;이철인;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.400-403
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    • 2003
  • Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562\;{\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

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해수 전기분해를 적용한 배연 탈질 기술에 관한 연구 (A Study on the NOx Reduction of Flue Gas Using Seawater Electrolysis)

  • 김태우;김종화;송주영
    • 한국응용과학기술학회지
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    • 제29권4호
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    • pp.570-576
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    • 2012
  • 본 연구에서는 무격막식 전기분해 처리된 해수를 산화제로하는 NO 산화반응의 특성에 대해 실험적으로 살펴보았다. 폐순환 정전류 전기분해 시스템을 통해전해 시간이 길어질수록 전해수의 유효 염소농도와 온도, 염소산 이온의 비율이 증가함을 확인하였다. 전해수가 채워진 버블링 반응기에서 전해수의 유효염소농도와 온도에 비례하여 $NO_2$로 산화되는 NO의 양이 증가하였다. 또한 산화되어 생성된 $NO_2$는 전해수에 용해되어 $HNO_3{^-}$ 이온으로 존재함을 확인하였다.

서방형 이산화염소 가스 젤팩을 이용한 병풀의 저장 중 품질 변화 (Quality Changes of Centella asiatica by Slow-released ClO2 Gas Gel-pack during Storage)

  • 이경행;유광원;배윤정;한기정;장다빈
    • 한국식품영양학회지
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    • 제35권4호
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    • pp.247-252
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    • 2022
  • To improve the shelf-life of Centella asiatica, Centella asiatica was treated with gel packs containing slow-released chlorine dioxide (ClO2) gas at 3-5 ppm for 20 days at 4℃. The weight loss rate, as well as the changes in pH, color, and texture of the treated samples, were investigated. The weight of the control and ClO2 gas-treated samples was decreased during the storage period. The change in weight of the control was slightly faster than that of the samples treated with 3 and 4 ppm ClO2 gas. The pH of the control and the ClO2 gas treated samples were decreased during the storage period and there was no significant difference between the control and ClO2 gas treated samples. Concerning color (lightness, redness, and yellowness) changes of Centella asiatica during the storage period, there was no significant difference between the control and ClO2 gas treated samples. The change in shear force in the leaf and stem of Centella asiatica during the storage period was slightly lower in the 4 ppm ClO2 gas treated samples (in the leaf) compared to the control and 3 and 4 ppm ClO2 gas treated samples (in the stem) compared to the control and 5 ppm ClO2 gas treated sample.

염소가스에 의한 철 스크랩 중 Cu의 선택적 제거 (Selective Removal of Cu in Ferrous Scrap by Chlorine gas)

  • 이소영;손호상
    • 자원리싸이클링
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    • 제27권5호
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    • pp.54-60
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    • 2018
  • 철 스크랩으로부터 제조되는 철강재의 품질은 재활용 스크랩 중의 미량원소에 의해 악영향을 받는다. 특히 철 스크랩 중의 Cu는 소량이라도 그 영향이 크기 때문에 주의하여야 하는 원소이다. 본 연구에서는 철 스크랩 중의 Cu를 염소가스에 의해 선택적으로 제거할 수 있는 가능성에 대해서 실험실적으로 검토하였다. Cu를 함유하는 모의 철 스크랩을 여러 가지 분위기의 염소가스와 반응시켰다. 실험결과 Cu는 염화되어 증발되었으나, Fe는 염소와 산소의 혼합가스 분위기에서는 표면만 산화되고 염화되지 않았다.

알루미늄 연속주조 용탕의 탈 가스 일체화 장치 개발 (An Implementation of an Integrated Degasing System for Aluminum Molten Metal in Continuous Casting)

  • 이용중
    • 한국공작기계학회논문집
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    • 제17권1호
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    • pp.1-6
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    • 2008
  • There are some methods that have been used to manage a degasing process in recent years, such as an injection method that uses aluminum molten metal powder and chemicals supplier and input method that supplies argon and nitrogen, or chlorine gas by using a gas blow-tube. However, these methods show some problems, and it shows that it is a difficult process to handle, pollution due to producing a lot of toxic gases like chlorine and fluoride gas, irregular effects, and lowering work efficiency due to the excessive processing time. The problems that are the most fatal are the producing a lot of sludge due to the reaction of aluminum molten metal with chemicals, loss of metals, and decreasing the life of refractory materials. In order to solve these problems, this paper develops a technology that is related to aluminum continuous casting molten metal and monolithic degasing apparatus. A degasing apparatus developed in this study improved the existing methods and prevented environmental pollution with smokeless, odorless, and harmlessness by using a new method that applies argon and nitrogen gas in which the methods used in the West and Japan are eliminated. The method developed in this study decreases the molten metal processing and settling time compared to the existing methods and improves the workers' health, safety, and environment because there is no pollution in processes.

이산화염소수 생성기의 생성효율 및 과.채류에 대한 침지 세정 살균효과 (Effect of an Aqueous Chlorine Dioxide Generator and Effect on Disinfection of Fresh Fruits and Vegetables by Immersion Washing)

  • 박기재;정진웅;임정호;장재희;박희주
    • 한국식품저장유통학회지
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    • 제15권2호
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    • pp.236-242
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    • 2008
  • 이산화염소수 발생 최적조건을 검토하기 위하여 생성원료인 $NaClO_2$ 농도(0.01-0.1%)와 $Cl_2$ gas 투입량(100-1,000 g/hr)에 따른 chlorite, chlorate, FAC 및 chlorine dioxide의 생성량을 조사하였다. Chlorate, FAC 및 chloride dioxide 생성량은 $NaClO_2$$Cl_2$ 투입량이 증가할 수록 생성량이 증가하는 경향을 나타내었다. 이산화염소수 최적 생성조건은 0.1% $NaClO_2$, 900 g/hr $Cl_2$ gas 농도였으며 발생한 이산화염소수의 $ClO_2$는 882 ppm, FAC는 8.0 ppm, chlorite는 검출되지 않았고 chlorate는 43.32 ppm이었다. 이때의 수율과 순도는 각각 97.0%, 96.0%였다. 상추, 치콘, 깻잎, 케일의 채소류에 대한 세정 침지 살균에서는 이산화염소수 농도의존성 감균 효과를 나타내어 3-4 log의 총균수 감소 효과가 있었다. 과일의 경우에도 농도 의존성 감균 효과는 동일하였으며 대략 3-5 log의 총균수 감균 효과가 있었다.

Mechanisms of $Cl_2$ Molecules Dissociation in a Gas Discharge Plasma in Mixtures with Ar, $O_2.N_2$

  • Efremov, A.M.;Kwon, Kwang-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권4호
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    • pp.197-201
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    • 2001
  • The influence of argon, oxygen, and nitrogen admixtures on the dissociation of $Cl_2$ molecules in a glow discharge low-temperature plasma under the constant pressure conditions was investigated. For $Cl_2/Ar$ and $Cl_2/O_2$mixtures, the concentration of chlorine atoms was observed to be a practically constant at argon or oxygen concentrations up to 50%. This invariability is a most pro bably explained by relative increase in rate of $Cl_2$ direct electron impact dissociation due to the changes in electrophysical parameters of plasma such as EEDF, electron drift rate and mean energy. For all the considered mixtures, the contribution of stepwise dissociation involving active species from gas additives (metastable atoms and molecules, vibrationally excited molecules) was found to be negligible.

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