• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.15-22
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• 2007

We present the morphological evolution at different source powers in the ion-enhanced etching of GaAs(100) in $BCl_3-Cl_2$ plasma. With little ion bombardment at floating potential, the surface develops <110< ridges and {111} facets, as it does in purely chemical etching. The morphology develops in less than 1 minute and grows bigger over time. The etched surfaces show different morphologies at different source powers with constant pressures of gases. Lowe. source power (100 W) produces poorly developed crystallographic surfaces while higher source power (900 W) produces well developed crystallographic surfaces. This is attributed to the availability of excited reactive species(chlorine atoms) depending on source powers. With more concentration of the reactive species at higher source powers, the surface of GaAs(100) would be a surface that is expected from thermodynamics while the surface morphology would be determined by sputtering in the lack of reactive species. Statistical analysis of the surfaces, based on scaling theory, revealed two spatial exponents: one(smaller than one) is formed by atomic scale mechanisms, the other(larger than one) is formed by larger scale mechanisms which is believed to develop facets.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.250-261
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• 2007

We present the morphological evolution at different source powers in the ion-enhanced etching of GaAs(100) in $BCl_3-Cl_2$ plasma. With little ion bombardment at floating potential, the surface develops <110> ridges and {111} facets, as it does in purely chemical etching. Higher source power (900 W) produces well developed crystallographic surfaces while lower source power (100 W) produces poorly developed crystallographic surfaces. This is attributed to the availability of excited reactive species (chlorine atoms) depending on source powers. With more concentration of the reactive species at higher source powers, the surface of GaAs(100) would be a surface that is expected from thermodynamics while the surface morphology would be determined by sputtering in the lack of reactive species. Statistical analysis of the surfaces, based on scaling theory, revealed two spatial exponents: one (smaller than one) is formed by atomic scale mechanisms, the other (larger than one) is formed by larger scale mechanisms which is believed to develop facets. When samples are biased, the surfaces experienced bombardment resulting in suppression of ridge formation at high source power and islands formation at low source power.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.32 no.1
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• pp.78-88
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• 2022

Objectives: To develop the smart sensor to protect worker's health from chemical exposure by adopting ICT (Information and Communications Technology) technologies. Methods: To develope real-time chemical exposure monitoring system, IoT (Internet of Things) sensor technology and regulations were reviewed. We developed and produced smart sensor. A smart sensor is a system consisting of a sensor unit, a communication unit, and a platform. To verify the performance of smart sensors, each sensor has been certified by the Korea Laboratory Accreditation Scheme (KOLAS). Results: Chemicals (TVOC; Total Volatile Organic Compounds, Cl₂: Chlorine, HF: Hydrogen fluoride and HCN: Hydrogen cyanide) were selected according to a priority logic (KOSHA Alert, acute poisoning statistics, literature review). Notifications were set according to OEL (occupational exposure limit). Sensors were selected based on OEL and the capabilities of the sensors. Communication is designed to use LTE (Long Term Evolution) and Wi-Fi at the same time for convenience. Electronic platform were applied to build this monitoring system. Conclusions: Real-time monitoring system for OEL of hazardous chemicals in workplace was developed. Smart sensor can detect chemicals to complement monitoring of traditional workplace environmental monitoring such as short term and peak exposure. Further research is needed to expand the scope of application, improve reliability, and systematically application.