1 |
H.F. Winters and J.W. Coburn, Surf. Sci. Rep. 14, 161 (1992)
|
2 |
T. Ohmi, K. Kotani, A. Teramoto, and M. Miyashita, IEEE Electron Device Lett. 12, 652 (1991)
DOI
ScienceOn
|
3 |
M. Saitou, M. Hokama, and W. Oshikawa, Appl. Surf. Sci. 185, 79 (2001)
DOI
ScienceOn
|
4 |
T. Ngo, E.J. Snyder, W.M. Tong, R.S. Williams, and M.S. Anderson, Surf. Sci. 314, L817 (1994)
DOI
ScienceOn
|
5 |
A.-L. Barabasi, and H.E. Stanley, Fractal concepts in Surface Growth, Cambridge University Press, 1995
|
6 |
D.W. Shaw, J. Crystal Growth 47, 509 (1979)
DOI
ScienceOn
|
7 |
M. Heyen and P. Balk, J. Crystal Growth, 53, 558 (1981)
DOI
ScienceOn
|
8 |
M. Heyen and P. Balk, J. Crystal Growth, 53, 558 (1981)
DOI
ScienceOn
|
9 |
D.W. Shaw, J. Electrochem. Soc. 128, 874 (1981)
DOI
ScienceOn
|
10 |
L. Sha, R. Puthenkovilkam, Y.-S. Lin, and J.P. Chang J. Vac. Sci. Tech. B 21, 2420 (2003)
DOI
ScienceOn
|
11 |
B. Chapman, Glow Discharge Processes: Sputtering and Plasma Etching, (John Wiley and Sons, New York, 1980)
|
12 |
H.P. Gillis, 'Etching and Deposition,' in John Moore and Nicholas Spencer (eds.) Encylopedia of Chemical Physics and Physical Chemistry, (Institute of Physics, Philadelphia, PA, 2001). Chapter 2.18, pp. 2613-2630
|
13 |
K.K. Ko, K. Kamath, O. Zia, E. Berg, S.W. Pang, and P. Bhattacharya, J. Vac. Sci. Tech. B 13, 2709 (1995)
|
14 |
Z. Maktadir, K. Sato, A. Mastumuro, K. Kayukawa, and M. Shikida, Mat. Res. Soc. Symp. Proc. 605, 305 (2000)
|
15 |
T. Ngo, E.J. Snyder, W.M. Tong, R.S. Williams, and M.S. Anderson, Surf. Sci. 314, L817 (1994)
DOI
ScienceOn
|
16 |
E.A. Eklund, R. Bruinsma, J. Rudnick, and R.S. Williams, Phy. Rev. Lett. 67, 1759 (1991)
DOI
ScienceOn
|
17 |
Wafer Technology Ltd. (UK)에서 구매
|
18 |
C.C. Chen, K.V. Guinn, V.M. Donnelly, and I.P. Herman, J. Vac. Sci. Tech. A 12, 2630 (1994)
DOI
ScienceOn
|
19 |
E. Hu and C.H. Chen, Microelectronic Engineering 35, 23 (1997)
DOI
ScienceOn
|
20 |
W.M. Tong and R.S. Williams, Annu. Rev. Phys. Chem. 45, 401 (1994)
DOI
ScienceOn
|
21 |
D.W.Shaw, J. Electrochem. Soc. 128, 874 (1981)
DOI
ScienceOn
|
22 |
D.J. Whitehouse, Meas. Sci. Technol. 8, 955 (1997)
DOI
ScienceOn
|
23 |
H.P. Gillis, D.A. Choutov, K.P. Martin, and Li Song, Appl. Phys. Lett., 68, 2255 (1996)
DOI
ScienceOn
|
24 |
D.W. Shaw, J. Crystal Growth 47, 509 (1979)
DOI
ScienceOn
|
25 |
D.E. Ibbotson, D. L. Flamm, and V.M. Donnelly, J. Appl. Phys. 54, 5974 (1983)
DOI
ScienceOn
|
26 |
C. Steinbruchel, Appl. Phys. Lett. 55, 1960 (1989)
DOI
|
27 |
H.P. Gillis et al., Appl. Phys. Lett. 68, 2255 (1996)
DOI
ScienceOn
|
28 |
J.W. Coburn and H.F. Winters, J. Appl. Phys. 50, 3189 (1979)
DOI
ScienceOn
|
29 |
M.E.R. Dotto and M.U. Kleinke, Physica A 295, 149 (2001)
DOI
ScienceOn
|