• Journal of Power Electronics
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• v.10 no.2
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• pp.115-124
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• 2010

In this paper, a simple yet efficient auto mode-hop ripple control structure for buck converters with light load operation enhancement is proposed. The converter, which operates under a wide range of input and output voltages, makes use of a state-dependent hysteretic comparator. Depending on the output current, the converter automatically changes the operating mode. This improves the efficiency and reduces the output voltage ripple for a wide range of output currents for given input and output voltages. The sensitivity of the output voltage to the circuit elements is less than 14%, which is seven times lower than that for conventional converters. To assess the efficiency of the proposed converter, it is designed and implemented with commercially available components. The converter provides an output voltage in the range of 0.9V to 31V for load currents of up to 3A when the input voltage is in the range of 5V to 32V. Analytical design expressions which model the operation of the converter are also presented. This circuit can be implemented easily in a single chip with an external inductor and capacitor for both fixed and variable output voltage applications.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.5
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• pp.458-465
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• 2013

This paper proposes a novel soft-switched auxiliary resonant circuit to provide a Zero-Voltage-Transition at turn-on for a conventional PWM boost converter in a PFC application. The proposed auxiliary circuit enables a main switch of the boost converter to turn on under a zero voltage switching condition and simultaneously achieves both soft-switched turn-on and turn-off. Moreover, for the purpose of an intelligent multi-chip power module fabrication, the proposed circuit is designed to satisfy several design constraints including space saving, low cost, and easy fabrication. As a result, the circuit is easily realized by a low rated MOSFET and a small inductor. Detail operation and the circuit waveform are theoretically explained and then simulation and experimental results are provided based on a 1.8 kW prototype PFC converter in order to verify the effectiveness of the proposed circuit.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.58-62
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• 2008

$Ni_{0.4}Zn_{0.4}Cu_{0.2}Fe_2O_4$ ferrite was fabricated by solid stat reaction method and sol-gel method. Because of the drawbacks of each method, we combined these two methods together. We proposed and experimentally verified that nanocrystalline ferrite additive was effective on improving the densification behavior and magnetic properties of NiZnCu ferrites for multilayer chip inductors. The initial permeability of the toroidal core Sample with 20 wt% nanocrystalline ferrite increased from 78.1 to 178.2 as annealing temperature is increased from $880^{\circ}C$ to $920^{\circ}C$. The density, shrinkage and saturation magnetization were increased with increasing annealing temperature, which was attributed to the decrease of additive grain size and increase of sintering density.

• Journal of the Korean Magnetics Society
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• v.20 no.5
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• pp.182-186
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• 2010

Effect of cobalt substitution on the sintering behavior and magnetic properties of a NiZnCu ferrite was studied. $Ni_{0.36-x}Co_xZn_{0.44}Cu_{0.22}Fe_{1.98}O_4(0{\leq}x{\leq}0.04)$ ferrite was fabricated by a solid stat reaction method. It was proposed and experimentally verified that $Co^{2+}$ substituted NiZnCu ferrite was effective on improving the quality factor and magnetic properties of NiZnCu ferrites for multilayer chip inductors. The ferrite was sintered without sintering aids, at $880{\sim}920^{\circ}C$, for 2 h and the initial permeability, quality factor, density, shrinkage, saturation magnetization, and coercivity were also measured. The quality factor (Q) was increased linearly up to x = 0.01 and decreased rapidly over x = 0.01. As the cobalt content increased, the initial permeability and density of the ferrites decreases. The initial permeability of toroidal sample for $Ni_{0.35}Co_{0.01}Zn_{0.44}Cu_{0.22}Fe_{1.98}O_4$ ferrites sintered at $900^{\circ}C$ was 130 at 1 MHz and quality factor was 230.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1055-1063
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• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.715-720
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• 2016

This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.8
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• pp.128-135
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• 2013

This paper presents a high dimming ratio Power-LED driver IC with high power which is capable of controlling LEDs. In order to accomplish a high dimming ratio LED driver, the preloading inductor current methodology is proposed for the power stage of the proposed method to achieve the fast transient response time during the Power-LED load switching. The information containing the current flowing on the LEDs can be utilized to predict the amount of the current on the inductor. The minimum LED current rising time of existing high dimming ratio Power-LED driver is limited by $3{\mu}s$, however that of the proposed high dimming ratio Power-LED driver is reduced about 1/10. The LED driver is implemented with 0.35um 60V BCDMOS 2-poly 4-metal process. The measurement results show that the proposed LED driver system features the minimum rising time as small as 240ns at the dimming frequency of 1KHz with a 12V of input voltage, nine white LEDs and 353mA of LED current. The LED rising time and power conversion efficiency of the chip are measured to be 240ns and 93.72%, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.28-34
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• 2010

In this paper, the transceiver for RFID reader using 13.56MHz as a carrier frequency and meeting International Standard ISO 14443 type A, 14443 type B and 15693 is presented. The receiver is composed of envelope detector, VGA(Variable Gain Amplifier), filter, comparator to recovery the received signal. The proposed automatic reference voltage generator, positive peak detector, negative peak detector, and data slicer circuit can adjust the decision level of reference voltage over the received signal amplitudes. The transmitter is designed to drive high voltage and current to meet the 15693 specification. By using inductor loading circuit which can swing more than power supply and drive large current even under low impedance condition, it can control modulation rate from 30 percent to 5 percent, 100 perccnt and drive the output currents from 5 mA to 240 mA depending on standards. The 13.56 MHZ RFID reader is implemented in $0.18\;{\mu}m$ CM08 technology at 3.3V single supply. The chip area excluding pads is $1.5mm\;{\times}\;1.5mm$.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.195-200
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• 2002

Low temperature sintering of Co$_2$Z type Ba ferrites with various oxide additives has been studied. Co$_2$Z phase was obtained by 2 step calcination and XRD peaks showed a good agreement with the peaks of the standard Co$_2$Z phase, except for some minor extra peaks. ZnO-B$_2$O$_3$ glass, ZnO-B$_2$O$_3$ and CuO, ZnO-B$_2$O$_3$ and Bi$_2$O$_3$, and ZnO-Bi$_2$O$_3$ glass were added to lower sintering temperatures. Specimens were sintered at the temperature range between 900 $^{\circ}C$ and 1000 $^{\circ}C$. In the single addition of ZnO-B$_2$O$_3$ glass, the specimen with 7.5 wt％ showed the highest shrinkage. Specimens with complex addition of ZnO-B$_2$O$_3$ glass with CuO or Bi$_2$O$_3$ showed higher shrinkages and initial permeabilities than single addition of ZnO-B$_2$O$_3$ glass. Shrinkages and initial permeabilities of the specimens with ZnO-Bi$_2$O$_3$ glass were higher than those of ZnO-B$_2$O$_3$ glass addition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.23-30
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• 2006

This paper presents a design of a high-efficiency CMOS DC-DC boost converter using a current-sensing feedback method. High-precision current-sensing circuity is incorporated in order to sense the current flowing in the inductor, which determines the switching scheme of the pulse-width modulation. The external components or large chip area for the frequency compensation can be avoided while maintaining the stable operations of the converter. Various input/output voltage levels can be available through the external resistor strings. The designed DC-DC converter is fabricated in a 0.18-um CMOS technology with a thick-gate oxide option. The converter shows the maximum efficiency over 90% for the output voltage of 3.3V and load current larger than 200mA. The load regulation is 1.15% for the load current change of 100mA.