• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.117-122
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• 2016

In this paper, we propose 24-GHz CMOS radio frequency (RF) power amplifier for short-range automotive collision avoidance radars. This circuit contains common source stage with inter-stages conjugate matching circuit as a class-A mode amplifier. The proposed circuit is designed using TSMC $0.13-{\mu}m$ mixed signal/RF CMOS process ($f_T/f_{MAX}=120/140GHz$). It operates at the supply voltage of 2V, and it is designed to have high power gain, low insertion loss and low noise figure in the low supply voltage. To reduce total chip area, the circuit used transmission lines instead of the bulky real inductor. The designed CMOS power amplifier showed the smallest chip size of $0.1mm^2$, the lowest power consumption of 40mW, the highest power gain of 26.5dB, the highest saturated output power of 19.2dBm and the highest maximum power-added efficiency of 17.2% as compared to recently reported results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.989-994
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• 2005

A MMIC(Monolithic Microwave Integrated Circuit) switch chip using InGaAs/GaAs p-HEMT process has been designed for MSM(Microwave Switch Matrix) of satellite communication system. An absorptive type MMIC switch is adopted for good reflection coefficients performances of input and output ports at both on and off states. And, a quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3 GHz band to reduce the chip size. This MMIC switch covers the frequency range of $3.2\~3.6\;GHz$. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of $1.6\;mm{\times}1.3\;mm$ demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the performance coincides with simulation results.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.2
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• pp.325-331
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• 2010

In this study, highly miniaturized short-wavelength meander line employing eriodically patterned ground structure (PPGS) was developed for application to miniaturized on-chip passive component on GaAs MMIC (monolithic microwave integrated circuit). The meander line employing PPGS showed shorter wavelength and slow-wave characteristic compared with conventional meander line. The wavelength of the meander line employing PPGS structure was 17 % of the conventional meander line on GaAs MMIC. Due to its slow-wave structure, the meander line employing PPGS exhibited large propagation constant than conventional meander line, which resulted in larger phase shift and shunt inductance value. Above results indicate that the meander line employing PPGS is a promising candidate for application to a development of miniaturized on-chip RF components as well as inductor with a high inductance value on GaAs MMIC.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.162-172
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• 2011

In this paper, a design and fabrication of 4 W power amplifier for the WiMAX frequency band(2.3~2.7 GHz) are presented. The adopted active device is a commercially available GaN HEMT chip of Triquint Company, which is recently released. The optimum input and output impedances are extracted for power amplifier design using a specially self-designed tuning jig. Using the adopted impedances value, class-F power amplifier was designed based on EM simulation. For integration and matching in the small package module, spiral inductors and interdigital capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 50 % and harmonic suppression above 40 dBc for second(2nd) and third(3rd) harmonic at the output power of 36 dBm.

• Resources Recycling
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• v.7 no.4
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• pp.35-42
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• 1998

Surface mount technology is the biggest theme in the area of deιIronic component. To miniatunze an electronic component, s such as ferrite chip inductor, the cer뼈lic wet process for green-sheet lamination and/or screen printing method through a s solvent medium system is widely used. The preparation and characterization of NiCuZn Ferrite (NCZF) shurry and the green s sheet using the water mixed binder system has been studied. The 21 vol% of NCZF slurry was prepared by a ball milling. The p polyacrylic vinyl copolymer (Mw; 60,000) was used as a binder. Th$\xi$ mixture of distilled water, isopropyl alcohol (IPA) and 2l butoxy ethanol was used as a dispersion medium. The water content of medium varied from about 40% to 80%. As the results. Thc disp$\xi$rston stability of the NCZF slurry was attributed to the free polymer rather than the electrostatic force of the particle. T The viscosity of the NCZF slurry was greatly depended on the ratio of water content in the medium.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.4
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• pp.127-132
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• 2001

We describe the pulse forming of pulsed $CO_2$laser using multi-pulse superposition technique. A various pulse length, high duty cycle pulse forming network(PFN) is constructed by time sequence. That is, this study shows a technology that makes it possible to make various pulse shapes by turning on SCRs of three PFN modules consecutively at a desirable delay time with the aid of PIC one-chip microprocessor. The power supply for this experiment consists of three PFN modules. Each PFN module uses a capacitor, a pulse forming inductor, a SCR, a High voltage pulse transformer, and a bridge rectifier on each transformer secondary. The PFN modules operate at low voltage and drive the primary of HV pulse transformer. The secondary of the transformer has a full-wave rectifier, which passes the pulse energy to the load in a continuous sequence. We investigated laser pulse shape and duration as various trigger time intervals of SCRs among three PFN modules. As a result, we can obtain laser beam with various pulse shapes and durations from about 250 $mutextrm{s}$ to 600 $mutextrm{s}$.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.8
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• pp.1239-1245
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• 2009

Currently, so many approaching methods are being developed to optimize the antenna size. In this paper, We fabricated Inverted-F type antenna attaching lumped components to solve the limitation of antenna size. Through experiments, a basic Inverted-F type antenna was fabricated and satisfied the adequate radiation pattern. After this, we researched the effect of antenna varied by matching circuit consist of chip type resistor, inductor, and capacitor. Using that elements, the antenna was matched at aim frequency. The proposed antenna's size is $7\;{\times}\;24\;mm$ that is very small size against the resonance frequence. Measuring the developed antenna, Its return loss was -18dB. Thus, this antenna can be used for Z-wave systems.

• ETRI Journal
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• v.25 no.2
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• pp.65-72
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• 2003

To achieve cost and size reductions, we developed a low cost manufacturing technology for RF substrates and a high performance passive process technology for RF integrated passive devices (IPDs). The fabricated substrate is a conventional 6" Si wafer with a 25${\mu}m$ thick $SiO_2$ surface. This substrate showed a very good insertion loss of 0.03 dB/mm at 4 GHz, including the conductive metal loss, with a 50 ${\Omega}$ coplanar transmission line (W=50${\mu}m$, G=20${\mu}m$). Using benzo cyclo butene (BCB) interlayers and a 10 ${\mu}m$ Cu plating process, we made high Q rectangular and circular spiral inductors on Si that had record maximum quality factors of more than 100. The fabricated inductor library showed a maximum quality factor range of 30-120, depending on geometrical parameters and inductance values of 0.35-35 nH. We also fabricated small RF IPDs on a thick oxide Si substrate for use in handheld phone applications, such as antenna switch modules or front end modules, and high-speed wireless LAN applications. The chip sizes of the wafer-level-packaged RF IPDs and wire-bondable RF IPDs were 1.0-1.5$mm^2$ and 0.8-1.0$mm^2$, respectively. They showed very good insertion loss and RF performances. These substrate and passive process technologies will be widely utilized in hand-held RF modules and systems requiring low cost solutions and strict volumetric efficiencies.

• ETRI Journal
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• v.38 no.4
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• pp.654-664
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• 2016

This paper presents a transformer-based reconfigurable synchronous boost converter. The lowest maximum power point tracking (MPPT)-input voltage and peak efficiency of the proposed boost converter, 20 mV and 88%, respectively, were achieved using a reconfigurable synchronous structure, static power loss minimization design, and efficiency boost mode change (EBMC) method. The proposed reconfigurable synchronous structure for high efficiency enables both a transformer-based self-startup mode (TSM) and an inductor-based MPPT mode (IMM) with a power PMOS switch instead of a diode. In addition, a static power loss minimization design, which was developed to reduce the leakage current of the native switch and quiescent current of the control blocks, enables a low input operation voltage. Furthermore, the proposed EBMC method is able to change the TSM into IMM with no additional time or energy loss. A prototype chip was implemented using a $0.18-{\mu}m$ CMOS process, and operates within an input voltage range of 9 mV to 1 V, and an output voltage range of 1 V to 3.3 V, and provides a maximum output power of 37 mW.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.351-354
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• 2006

Recently, a fuel cell with low voltage and high current output characteristics is remarkable for new generation system It needs both a DC-DC step-up converter and DC-AC inverter to be used in fuel cell generation system Therefor, this paper, consists of an isolated DC -DC converter to boost the fuel cell voltage 380[$V_{DC}$] and a PWM inverter with LC filter to convent the DC voltage to single phase 220[$V_{AC}$]. Expressly, a tapped inductor filter with freewheeling diode is newly implemented in the output filter of the proposed high frequency isolated ZVZCS PWM DC-DC converter to suppress circulating current under the wide output voltage regulation range, thus to eliminate the switching and transformer turn-on/off over-short voltage or transient phenomena Besides the efficiency of 93-97[%]is obtained over the wide output voltage regulation ranges and load variations.