• Title/Summary/Keyword: Cheong-song

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Thermal Stability of Titanium and Cobalt Thin Films on Silicon Oxide Spacer (티타늄과 코발트 박막의 산화규소 스페이서에 대한 열적안정성)

  • Cheong, Seong-Hwee;Song, Oh-Sung;Kim, Min-Sung
    • Korean Journal of Materials Research
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    • v.12 no.11
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    • pp.865-869
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    • 2002
  • We investigated the reaction stability of titanium, cobalt and their bilayer films with side-wall spacer materials of SiO$_2$ for the salicide process. We prepared Ti 350 $\AA$, Co 150 $\AA$, Co 150 $\AA$/Ti 100 $\AA$ and Ti 100 $\AA$/Co 150 $\AA$ films on 1000 $\AA$-thick thermally grown SiO$_2$ substrates, respectively. Then the samples were rapid thermal annealed at the temperatures of $500^{\circ}C$, $600^{\circ}C$, and $700^{\circ}C$ for 20 seconds. We characterized the sheet resistance of the metallic layers with a four-point probe, surface roughness with scanning probe microscope, residual phases with an Auger depth profilometer, phase identification with a X-ray diffractometer, and cross-sectional microstructure evolution with a transmission electron microscope, respectively. We report that Ti reacted with silicon dioxide spacers above $700^{\circ}C$, Co agglomerated at $600^{\circ}C$, and Co/Ti, Ti/Co formed CoTi compound requiring a special wet process.

Identification of Fusarium leaf spot(Fusarium nivale) newly reported In Korea (수도갈색엽고병(Fusarium nivale)의 동정)

  • Kwon Shin Han;Song Hi Sup;Sohn Cheong Yeol;Yamakuchi Tomio
    • Korean journal of applied entomology
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    • v.12 no.3
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    • pp.121-124
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    • 1973
  • From the new rice variety Tong-il, disease symptoms similar to Fusarium leaf spot reported in Japan was observed in Korea. Causal organism was isolated and identified as Fusarium nivale causing Fusarium leaf spot through the study of conidia shape, ascus formation on diseased spot, and ascospore. These results also showed good agreement with that of other investigators. Under the field condition, marked occurrence of this disease has observed by heavy nitrogen application. The optimum temperature for the growth of this fungus was $24^{\circ}C$.

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A Study on Factors Related to of Clonorchiasis Infection among the Inhabitants in the Nakdong Riverside Area (낙동강 유역 주민들의 간흡충 감염에 영향을 주는 개인요인 및 지역요인 분석)

  • Hwang, Seong-Ho;Park, Jae-Yong;Han, Chang-Hyun;Song, Yeon-Yi;Park, Kyung-Soon
    • Research in Community and Public Health Nursing
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    • v.21 no.2
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    • pp.242-251
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    • 2010
  • Purpose: This study investigated the factors of C. sinensis infection among the residents in vicinity of the Nakdong River and the infection status of fishes in the stream with C. sinensis maetacercaria. Methods: Selected five regions of the Nakdong River and collected freshwater fishes from the stream to examine their metacercarial infections; and studied the status and causes of C. sinensis infection in 552 residents living within 5 kilometers from the river. Results: Among the 552 residents studied, 13.8% were infected with C. sinensis, and among 379 freshwater fishes of 20 species collected from the five regions, 41 fishes of 8 species were infected with C. sinensis metacercaria. Conclusion: In order to prevent human C. sinensis infection and transition to chronic liver ions, we need to develop and apply good programs such as continuous health education, personal hygiene improvement, active medical treatment for those infected with C. sinensis, and residents’ voluntarily stop of eating freshwater fishes in the raw state.

Design of the low noise CMOS LDO regulator for a low power capacitivesensor interface (저전력 용량성 센서 인터페이스를 위한 저잡음 CMOS LDO 레귤레이터 설계)

  • Kwon, Bo-Min;Jung, Jin-Woo;Kim, Ji-Man;Park, Yong-Su;Song, Han-Jung
    • Journal of Sensor Science and Technology
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    • v.19 no.1
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    • pp.25-30
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    • 2010
  • This paper presents a low noise CMOS regulator for a low power capacitive sensor interface in a $0.5{\mu}m$ CMOS standard technology. Proposed LDO regulator circuit consist of a voltage reference block, an error amplifier and a new buffer between error amplifier and pass transistor for a good output stability. Conventional source follower buffer structure is simple, but has a narrow output swing and a low S/N ratio. In this paper, we use a 2-stage wide band OTA instead of source follower structure for a buffer. From SPICE simulation results, we got 0.8 % line regulation and 0.18 % load regulation.

Study on the Tribo-Characteristics of Tin-Bronze Matrix Material for Brake Pad (Brake Pad용 청동기지 복합재료의 마찰.마모특성에 관한 연구(I))

  • Song, Geon;Hwang, Soon-Hong;Kong, Ho-Sung;Choi, Woong-Soo;Cheong, Dong-Yun;Huh, Moo-Young
    • Tribology and Lubricants
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    • v.12 no.4
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    • pp.18-27
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    • 1996
  • An interlaboratory wear testing was performed in order to understand the friction behaviors and the wear mechanisms of the sintered composites. The specimens were the sintered bronze matrix composites having various contents of friction additives, friction control agents and reinforcements. The variation of the wear characteristics according to the constituents of the composites as well as the wear conditions was investigated by SEM, EPMA, OM, the hardness testing and the measurement of friction. The specimen having glass fiber as the matrix reinforcement showed a remarkable increase in wear resistance as increasing the content of glass fiber. Graphite particles in the composites exhibited the lubricating effect and also resulted in the lowering strength of the matrix. Addition of Mo powder to the composites led to the deterioration of wear properties at the room temperature, however, an enhanced wear properties were obtained in the containing Mo at an elevated temperature.

Characteristics of Gate Oxides with Cobalt Silicide Process (복합 코발트 실리사이드 공정에 따른 게이트 산화막의 특성변화)

  • Song, Oh-sung;Cheong, Seong-hwee;Yi, Sang-don;Lee, Ki-yung;Ryu, Ji-ho
    • Korean Journal of Materials Research
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    • v.13 no.11
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    • pp.711-716
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    • 2003
  • Gate length, height, and silicide thickness have all been shrinking linearly as device density has progressively increased over the years. We investigated the effect of the cobalt diffusion during the silicide formation process on the 60$\AA$-thick gate oxide lying underneath the Ti/Co and Co/Ti bilayers. We prepared four different cobalt silicides, which have similar sheet resistance, made from the film structure of Co/Ti(interlayer), and Ti(capping layer)/Co, and peformed the current-voltage, time-to-break down, and capacitance-voltage measurements. Our result revealed that the cobalt silicide process without the Ti capping layer allowed cobalt atoms to diffuse into the upper interface of gate oxides. We propose that 100$\AA$-thick titanium interlayer may lessen the diffusion of cobalt to gate oxides in 1500-$\AA$ height polysilicon gates.

Epidural Blood Patch to Treat Spontaneous Intracranial Hypotension (자발성 두개내 저압환자에서의 경막외 혈액봉합술)

  • Lee, Cheong;Song, Jun-Gol;Park, Jae-Hong;Shin, Jin-Woo;Choi, Yoon;Yun, Chang-Seob
    • The Korean Journal of Pain
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    • v.13 no.1
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    • pp.79-83
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    • 2000
  • Background: Spontaneous intracranial hypotension is a syndrome characterized by postural headache without trauma, spinal anesthesia or other medical history. The purpose of this study is to analyze the effect of epidural blood patch in spontaneous intracranial hypotension. Methods: The spontaneous intracranial hypotension patients treated with epidural blood patch were analyzed on the symptoms, radiologic images and methods of epidural blood patch retrospectively by the medical records. Results: Patients had postural headache (15 patients) including nausea/vomiting (10 patients), tinnitus (2 patients), neck stiffness (13 patients), vertigo (3 patients) and occular pain (1 patient). Brain CT and MRI showed diffuse enhancement of the pachymeninges (9 patients) and radionuclide cisternography demonstrated direct evidence of leakage (11 patients). With epidural blood patch, the symptoms were promptly relieved in 11 patients. Conclusions: We concluded that epidural blood patch is a good treatment of method in spontaneous intracranial hypotension patients.

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Effect of the Existing Rust on Bond Strength of Concrete and Reinforcement

  • Lee, Byung-Duck;Kim, Kook-Han;Yu, Hwan-Gu;Cheong, Hai-Moon;Ahn, Tae-Song
    • Proceedings of the Korea Concrete Institute Conference
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    • 2004.05a
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    • pp.478-481
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    • 2004
  • An experimental investigation on the relationship between corrosion of reinforcement and bond strength in pull-out test specimen has been conducted to establish the allowable limit of rust of reinforcement in the construction field. The reinforcing bars used in this study were rusted before embedded in pull-out test specimen. The first component of this experiment is to make reinforcing bar rust electrically based on Faraday's theory to be 2, 4, 6, 8 and $10\%$ of reinforcing bar weight. For estimation of the amount of rust by weight, Clarke's solution and shot blasting were adopted and compared. Parameters also include 24 and 45MPa of concrete compressive strengths and diameter of reinforcing bar (16, 19 and 25mm). Pull-out tests were carried out according to KS F 2441 and ASTM C 234. Results show that up to $2\%$ of rust increases the bond strength regardless of concrete strength and diameter of reinforcing bar. As expected, the bond strength increases as compressive strength of concrete increases and the diameter of bar decreases.

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A Case Study on Excavation of Tunnel in a Shallow Layer & Uneven Slope (저토피.편경사 지형에서 터널굴착사례)

  • Lee, Chun-Suk;Yoo, Ki-Cheong;Jung, Chan-Gyu;Song, Pyung-Hyun;Choi, Choong-Lak;Kwon, Min-Seok
    • Proceedings of the Korean Geotechical Society Conference
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    • 2005.10a
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    • pp.570-580
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    • 2005
  • NATM 터널에 작용하는 토압(이완하중)의 크기는 지형조건, 지질조건등에 따라 다르므로 정량적으로 산정하기에는 다소 어려움이 있으며, 실무적으로 Terzaghi(1946)가 제안한 암반의 이완하중을 적용하고 있다. Terzaghi 암반이완하중은 지형상 저토피, 편경사등을 고려하기에는 다소 무리가 있고 특히, 설계시 시공중 공용후 터널에 편토압이 작용한다고 예측하는 것은 더욱 어렵다고 할 수 있다. 본 연구에서는 저토피 편경사지형에서 터널의 문제점 보강대책방안에 대하여 종합 검토하였으며, 실제 지형상 저토피, 편경사를 이루나 암질이 양호하다고 판단되어 아칭 효과를 기대할 수 있을 것으로 예상되는 터널이 굴착과정중 설계시 추정된 지반조건과 상이하여 터널지보재(숏크리트)의 균열 및 이상 변위가 발생된 터널에서 보강대책방안으로 인버트폐합을 실시하여 안정된 터널굴착을 할 수 있었던 사례를 소개하고 저토피 편경사 지형에서 NATM 터널의 설계 시공시 유의사항에 대하여 검토하였다.

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Hardware implementation of a CMOS image sensor pixel using complemental signal path (상보형 신호경로 방식의 CMOS 이미지 센서 픽셀의 하드웨어 구현)

  • Jung, Jin-Woo;Kwon, Bo-Min;Kim, Ji-Man;Park, Ju-Hong;Park, Yong-Su;Lee, Je-Won;Song, Han-Jung
    • Journal of Sensor Science and Technology
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    • v.18 no.6
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    • pp.475-484
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    • 2009
  • In this paper, an analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure consists of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process. Measured results show that the output signal range is from 0.8 V to 3.8 V. This output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.