• Title/Summary/Keyword: Chemically Amplified Photoresist

Search Result 5, Processing Time 0.021 seconds

Poly[(1-methacryloyloxy-4-tosyloxycyclohexane)-co-(tert-butyl methacrylate)] as an acid amplifying photoresist (산 증식형 포토레지스트로 Poly($MTC_{10}-co-tBMA_{90}$)의 합성 및 특성 연구)

  • Kuen, Kyoung-A;Lee, Eun-Ju;Lim, Kwon-Taek;Jeong, Yong-Seok;Jeong, Yeon-Tae
    • Journal of the Korean Graphic Arts Communication Society
    • /
    • v.20 no.2
    • /
    • pp.131-140
    • /
    • 2002
  • Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

  • PDF

Technology Trends for Photoresist and Research on Photo Acid Generator for Chemical Amplified Photoresist (포토 레지스트의 기술 동향과 화학 증폭형 포토레지스트에서의 광산 발생제의 연구)

  • Kim, Sung-Hoon;Kim, Sang-Tae
    • Journal of Integrative Natural Science
    • /
    • v.2 no.4
    • /
    • pp.252-264
    • /
    • 2009
  • Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

  • PDF

p-Toluenesulfonate Ester Derivatives of Benzendiol as Novel Acid Amplifiers (새로운 산증식제로 벤젠다이올의 p-톨루엔술폰산 에스터 유도체에 관한 연구)

  • Kang, Ji Eun;Hong, Kyoun Il;Lim, Kwon Taek;Jeong, Yeon Tae
    • Applied Chemistry for Engineering
    • /
    • v.16 no.5
    • /
    • pp.660-663
    • /
    • 2005
  • Aiming the development of novel acid amplifiers, 2-hydroxyphenyl-4-methylbenzenesulfonate (1), 3-hydroxyphenyl-4-methylbenzene sulfonate (2), 4-hydroxyphenyl-4-methylbenzenesulfonate (3) were synthesized as the aromatic acid amplifiers with good thermal stability. They were autocatalytically generated p-toluenesulfonic acid in the presence of small amount of acid evolved from a photoacid generator. These aromatic sulfonates showed excellent thermal stability in PtBMA film and were proven to be the first aromatic acid amplifier to act as a photosensitivity enhancer. When these compounds were coupled with a chemically amplified photoresist system, photosensitivity was enhanced up to 3~6 folds.

Preparation and Characterization of p-Styrenesulfonates of Isopropylidene Dicyclohexanol as Acid Amplifiers to Enhance the Photosensitivity of Positive-Working Photoresists (포지티브 포토레지스트의 감도 증진을 위한 산 증식제로 이소프로필리덴 디시클로헥산올의 p-스티렌술폰산 에스테르의 합성 및 특성연구)

  • Lee, Eun-Ju;Hong, Kyong-Il;Lim, Kwon-Taek;Jeong, Yong-Seok;Hong, Sung-Su;Jeong, Yeon-Tae
    • Journal of the Korean Chemical Society
    • /
    • v.46 no.5
    • /
    • pp.437-471
    • /
    • 2002
  • The photosensitivity enhancement of photoresist achieved by the addition of acid amplifiers stems from the autocatalytic decomposition of the acid amplifiers triggered by acidic species generated from a photoacid gen-erator. In this research we synthesized and evaluated 4-hydroxy-4'-p-styrenesulfonyloxy isopropylidene dicyclohex-ane(1), 4,4'-di-p-styrenesulfonyloxy isopropylidene dicyclohexane(2) and 4-p-styrenesulfonyloxy-4'-tosyloxy isopropylidene dicyclohexane(3) as novel acid amplifiers. These acid amplifiers(1-3) showed reasonable thermal stability for resist pro-cessing temperature. As estimated by the sensitivity curve, 1-3 were 2X-12X sensitive than poly(tert-butyl meth-acrylate) film in the presence of a photoacid generator and, therefore, provides practical applicability for photoimaging.

Effect of Acid Amplifier, 4-Hydroxy-4'-p-tosyloxy Isopropylidene Dicyclohexane, on the Kind of Resin in Chemically Amplified Photoresist (화학 증폭형 포토레지스트 수지의 종류에 따른 산증식제 4-Hydroxy-4'-p-tosyloxy Isopropylidene Dicyclohexane의 효과)

  • Kang, Ji Eun;Lim, Kwon Taek;Jeong, Yeon Tae
    • Applied Chemistry for Engineering
    • /
    • v.16 no.2
    • /
    • pp.262-266
    • /
    • 2005
  • We compared the effects of a representative aliphatic acid amplifier, 4-hydroxy-4'-p-tosyloxy isopropylidene dicyclohexane, doped in poly[tert-butyl methacrylate] (pTBMA), poly[tetrahydropyranyl methacrylate] (pTHPMA) or poly[tert-butoxycarbonyloxystyrene] (pTBOCST) resin film as acid labile polymer in view of thermal stability and photosensitivity enhancement. The acid amplifier was stable up to 20 min in pTBMA and pTBOCST film and up to 5 min in pTHPMA film at $120^{\circ}C$. pTBMA and pTHPMA films doped with the acid amplifier showed four times and two times higher photosensitivity, respectively. But pTBOCST showed negligible photosensitivity enhancement. Photosensitivity enhancement and thermal stability were found to be affected by the resin.