• Journal of the Korean institute of surface engineering
• /
• v.47 no.5
• /
• pp.269-274
• /
• 2014

Electroless plating process as a solution deposition method is a viable means of preparing conductive metal films on non-conducting substrates through chemical reactions. In the present study, the preparation and properties of electroless Ni-plating on flexible silicone rubber are described. The process has been performed using a conventional Ni(P) chemical bath. Additives and complexing agents such as ammonium chloride and glycine were added and the reaction pH was controlled by NaOH aqueous solution. Ni deposition rate and crystallinity have been found to vary with pH and temperature of the plating bath. It was shown that Ni-films having the high crystallinity, enhanced adhesion and optimum electric conductivity were formed uniformly on silicone rubber substrates under pH 7 at $70^{\circ}C$. The conductive Ni-plated silicone rubber showed a high electromagnetic interference shielding effect in the 400 MHz-1 GHz range.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc1
• /
• pp.42-46
• /
• 2012

The effect of the parameters for few-layered graphene growth by thermal CVD on nickel substrate was investigated. Graphene can be synthesized by using different strategies. Chemical vapor deposition (CVD) has known as one of the most attractive methods to produce graphene due to its good film uniformity, compatibility and large scale production. The control of parameters such as temperature, growth time and pressure in CVD process has been widely recognized as the most important process in graphene growth. Different carbon precursors, methane and acetylene, were introduced in the quartz tube with a variety of growth conditions. Raman spectroscopy was used to confirm the presence of a few- or multi-layered graphene.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.9
• /
• pp.2695-2697
• /
• 2010

• Korean Journal of Materials Research
• /
• v.33 no.11
• /
• pp.491-496
• /
• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• Bulletin of the Korean Chemical Society
• /
• v.24 no.2
• /
• pp.183-188
• /
• 2003

The micro-patterning of multi-layered thin films containing CdS and $Ta_2O_5$ layers on ITO substrate with various structures was successfully obtained by combining three different techniques: chemical solution depositions, sol-gel, and microcontact printing (μCP) methods using octadecyltrichlorosilane (OTS) as the organic thin layer template. $Ta_2O_5$ layer was prepared by sol-gel casting and CdS one obtained by chemical solution deposition, respectively. Parallel and cross patterns of multi-layers with $Ta_2O_5$ and CdS films were fabricated additively by successive removal of OTS layer pre-formed. This study presents the designed architectures consisting of the two types of feature having horizontal dimensions of 170 ㎛ and 340 ㎛ with constant thickness ca. 150 nm of each deposited materials. The thin film lay-out of the cross-patterning is composed of four regions with chemically different layer compositions, which are confirmed by Auger electron microanalysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.2
• /
• pp.104-110
• /
• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.10
• /
• pp.646-650
• /
• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.4
• /
• pp.226-230
• /
• 2018

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

• Korean Chemical Engineering Research
• /
• v.46 no.6
• /
• pp.1063-1068
• /
• 2008

The photocatalytic degradation of methylene blue water solution was carried out by irradiating microwave and UV light simultaneously using $TiO_2$ photocatalyst balls prepared by Chemical Vapor Deposition method. A microwave-discharged electrodeless UV lamp was developed to use microwave and UV simultaneously for photocatalytic reactions. The results of photocatalytic degradation of methylene blue showed that the decomposition rate increased with the microwave intensity, the circulating fluid velocity and auxiliary oxidizing agents added. Especially, the rate constant of $H_2O_2$-added photocatalytic reaction increased about three times from $0.0061min^{-1}$ to $0.0197min^{-1}$ when microwave was additionally irradiated. This study demonstrates that the microwave irradiation can play a very important role in photocatalytic degradation using peroxides although it is not easy to quantitatively assess the effect of microwave on photocatalytic reactions from the experimental data of this study.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2003.10a
• /
• pp.27-29
• /
• 2003

Solution-based MOD-TFA deposition technology of YBCO layers offers a route to low-cost YBCO coated conductors. Since the structures and properties of grown thin film by MOD process are strongly influenced by chemistry of precursor solution, the chemical modification of precursor solution for MOD process are important for improvement of the electrical properties of YBCO films. In this study, the precursor solution for MOD process are modified by chemical additives and solvents. The microstructure and texture of YBCO films grown by chemically modified precursor solution were characterized with SEM/EDS, XRD.