• Journal of the Korean institute of surface engineering
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• v.53 no.5
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• pp.241-248
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• 2020

The change of the deposition behavior of diamond through a pretreatment process of the base metal prior to diamond deposition using HFCVD was investigated. To improve the specific surface area of the base material, sanding was performed using sandblasting first, and chemical etching treatment was performed to further improve the uniform specific surface area. Chemical etching was performed by immersing the base material in HCl solutions with various etching time. Thereafter, seeding was performed by immersing the sanded and etched base material in a diamond seeding solution. Diamond deposition according to all pretreatment conditions was performed under the same conditions. Methane was used as the carbon source and hydrogen was used as the reaction gas. The most optimal conditions were found by analyzing the improvement of the specific surface area and uniformity, and the optimal diamond seeding solution concentration and immersion time were also obtained for the diamond particle seeding method. As a result, the sandblasted base material was immersed in 20% HCl for 60 minutes at 100 ℃ and chemically etched, and then immersed in a diamond seeding solution of 5 g/L and seeded using ultrasonic waves for 30 minutes. It was possible to obtain optimized economical diamond film growth rates.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2431-2437
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• 2014

In this study, Ni, Ni-Cu and Ni/Cu catalysts were deposited onto C-fiber textiles via the electrophoretic deposition method, and the growth characteristics of carbon nanofibers on the deposited catalyst/C-fiber textiles were investigated. The catalyst deposition onto C-fiber textiles was accomplished by immersing the C-fiber textiles into Ni or Ni-Cu mixed solutions, producing the substrate by post-deposition of Ni onto C-fiber textiles with pre-deposited Cu, and passing it through a gas mixture of $N_2$, $H_2$ and $C_2H_4$ at $700^{\circ}C$ to synthesize carbon nanofibers. For analysis of the characteristics of the synthesized carbon nanofibers and the deposition pattern of catalysts, SEM, EDS, BET, XRD, Raman and XPS analysis were conducted. It was found that the amount of catalyst deposited and the ratio of Ni deposition in the Ni-Cu mixed solution increased with an increasing voltage for electrophoretic deposition. In the case of post-deposition of Ni catalyst onto substrates with pre-deposited Cu, both bimetallic catalyst and carbon nanofibers with a high level of crystallizability were produced. Carbon nanofibers yielded with the catalyst prepared in Ni and Ni-Cu mixed solutions showed a Y-shaped morphology.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.907-912
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• 2005

Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

• Bulletin of the Korean Chemical Society
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• v.26 no.4
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• pp.563-568
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• 2005

The Pt/C and Pd/C catalysts were prepared from conventional chloride precursors by adsorption or precipitation-deposition methods. Their activities for hydrogenation reactions of cyclohexene and acetophenone were compared with those of commercial catalysts. The Pt/C and Pd/C catalysts obtained from the adsorption procedure reveal higher hydrogenation activity than commercial catalysts and the catalysts prepared by the precipitation-deposition method. Their improved performances are attributed to the decreased metal crystallite sizes of Pt or Pd formed on the active carbon support upon the adsorption of the precursors probably due to the same negative charges of the chloride precursor and the carbon support. Under the preparation conditions studied, the reduction of the supported catalysts using borohydrides in liquid phase is superior to a gas phase reduction by using hydrogen in the viewpoint of particle size, hydrogenation activity and convenience.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.196-199
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• 2012

CdS thin film was prepared on glass substrate by chemical bath deposition in an alkaline solution. The optical properties of CdS thin film were investigated using spectroscopic ellipsometry. The real (${\varepsilon}_1$) and imaginary (${\varepsilon}_2$) parts of the complex dielectric function ${\varepsilon}(E)={\varepsilon}_1(E)+i{\varepsilon}_2(E)$, the refractive index n(E), and the extinction coefficient k(E) of CdS thin film were obtained from spectroscopic ellipsometry. The normal-incidence reflectivity R(E) and absorption coefficient ${\alpha}(E)$ of CdS thin film were obtained using the refractive index and extinction coefficient. The critical points $E_0$ and $E_1$ of CdS thin film were shown in spectra of the dielectric function and optical constants of refractive index, extinction coefficient, normal-incidence reflectivity, and absorption coefficient. The dispersion of refractive index was analyzed by the Wemple-DiDomenico single-oscillator model.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.20-22
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• 1994

The preparation of $YBa_2Cu_4O_8$ thick film on Ag substrate by electrophoretic deposition was directly studied. Electrophoretic deposition was carried out in solution, which was composed of presintered $YBa_2Cu_4O_8$ powder, sodium, and 2-propanol as a solvent. The deposited thick films were heat-treated in $O_2$ at 815$^{\circ}$C for 12 hours and at 450$^{\circ}$C for 12 hours. We succeeded in obtaining superconducting $YBa_2Cu_4O_8$ films on Ag substrate. Even though the chemical reactions at the $YBa_2Cu_4O_8$/Ag interface occurred in the range of 10 ${\mu}$m, superconductivity was not depressed. The thickness of the films was in the range of 60-80 ${\mu}$ m. The characteristics of the films were examined by electric resistance measurements, X-ray diffraction, and SEM observations.

• Progress in Superconductivity
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• v.3 no.1
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• pp.125-129
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• 2001

NiO buffer layers were deposited on texture Ni tapes fur YBCO coated conductors by MOCVD(metal organic chemical vapor deposition) method, using a single solution source. Variables were deposition temperature and flow rate of $0_2$carrier gas. At higher temperatures, The NiO(111) texture was well developed, but the NiO(200) texture was developed at low temperatures. The best result was obtained at the deposition temperature of$ 470^{\circ}C$ and the gas flow rate of 200 sccm. FWHM value of $\omega$-scan fur NiO(200) of the film and $\Phi$-scan for NiO(111) of the film was $4.2^{\circ}$ and $7^{\circ}$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.264.2-264.2
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• 2013

Molecular layer deposition (MLD) is sequential, self-limiting surface reaction to form conformal and ultrathin polymer film. This technique generally uses bifunctional precursors for stepwise sequential surface reaction and entirely organic polymer films. Also, in comparison with solution-based technique, because MLD is vapor-phase deposition based on ALD, it allows epitaxial growth of molecular layer on substrate and is especially good for surface reaction or coating of nanostructure such as nanopore, nanochannel, nanwire array and so on. In this study, polyurea film that consisted of phenylenediisocyanate and phenylenediamine was formed by MLD technique. In situ Fourier Transform Infrared (FTIR) measurement on high surface area SiO2 substrate was used to monitor the growth of polyurethane and polyurea film. Also, to investigate orientation of chemical bonding formed polymer film, plan-polarized grazing angle FTIR spectroscopy was used and it showed epitaxial growth and uniform orientation of chemical bones of polyurea films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1125-1130
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• 2003

The electrophoretic deposition method using the suspension solution with additives under the electric potential was applied for the fabrication of YBCO superconductor wire. This method was able to simplify the fabrication facilities, and produce an uniform and dense thick film. To improve the critical current density of deposited films, the additive PEGs(Poly Ethylene Glycole) with the molecular weight of 600, 1000 and 3400 were used as chemical binders for the suspension solution. The organic additive (PEG) showed better effects to the properties of YBCO superconductor wire. The PEG improved the adhesion between superconductor particles and suppressed the crack on the surface, which enhanced the surface uniformity and density of YBCO deposited film. It was found that acetone suspension solution showed better deposition properties than the others. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density measured as 2300∼2400 A/$\textrm{cm}^2$ at 77 K, 0 T.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.335-338
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• 1998

Ferroelectric Sr$_2$(Nb,Ta)$_2$O$_{7}$ (SNTO) thin films were prepared by chemical solution deposition processes. SNTO thin films were spin-coated on Pt/Ti/SiO$_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. B site-rich impurity phase, i.e. [Sr(Nb,Ta)$_2$O$_{6}$], was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.s.s.