• Current Photovoltaic Research
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• 제7권2호
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• pp.33-37
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• 2019

In this paper, we compared the performance of $Cu(In,Ga)(S,Se)_2$ (CIGSSe) thin film solar cell with CdS buffer layer deposited by irradiating 365 nm UV light with 8 W power in Chemcial Bath Deposition (CBD) process. The effects of UV light irradiation on the thin film deposition mechanism during CBD-CdS thin film deposition were investigated through chemical and electro-optical studies. If the UV light is irradiated during the solution process, the hydrolysis of Thiourea is promoted even during the same time, thereby inhibiting the formation of the intermediate products developed in the reaction pathway and decreasing the pH of the solution. As a result, it is suggested that the efficiency of the CdS/CIGSSe solar cell is increased because the ratio of the S element in the CdS thin film increases and the proportion of the O element decreases. This is a very simple and effective approach to control the S/O ratio of the CdS thin film by the CBD process without artificially controlling the process temperature, solution pH or concentration.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.805-808
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• 2010

본 연구에서는 CdTe 및 $CuInSe_2$ 태양전지의 광투과층으로 사용되는 CdS 박막을 chemical bath deposition으로 제조하고, 반응용액의 온도에 따른 미세구조의 변화를 조사하였다. CdS 박막의 결정구조와 미세구조는 기판의 종류에 큰 변화 없이 $85^{\circ}C$ 까지는 반응용액의 온도가 증가함에 따라 기판에서의 ion-by-ion 성장이 촉진되어 CdS 박막의 성장률이 증가하며, 결정성이 향상되고 continuous하면서 매우 조밀한 미세구조를 가졌다. 그러나 온도가 $55^{\circ}C$ 이하의 경우 CdS 형성에 필요한 Cd2+ 이온의 공급이 느려져 온도에 따라 증착률이 감소하였다. 또한 핵생성 위치 수가 감소하여 입자의 크기가 증가하였고, 박막 내부에는 void가 형성되어 균일하지 못한 미세구조를 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.78-84
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• 2012

An in-situ optical monitoring method for real-time process monitoring of electrochemical copper deposition (CED) is presented. Process variables to be controlled in achieving desired process results are numerous in the CED process, and the importance of the chemical bath conditions cannot be overemphasized for a successful process. Conventional monitoring of the chemical solution for CED relies on the pH value of the solution, electrical voltage level for the reduction of metal cations, and gravity measurement by immersing sensors into a plating bath. We propose a nonintrusive optical monitoring technique using three types of optical sensors such as chromatic sensors and UV/VIS spectroscopy sensors as potential candidates as a feasible optical monitoring method. By monitoring the color of the plating solution in the bath, we revealed that optically acquired information is strongly related to the thickness of the deposited copper on the wafers, and that the chromatic information is inversely proportional to the ratio of $Cu$ (111) and {$Cu$ (111)+$Cu$ (200)}, which can used to measure the quality of the chemical solution for electrochemical copper deposition in advanced interconnection technology.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.245-245
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• 2011

$BiFeO_3$ (BFO)박막에 전위금속 Pb와 Co를 각각 치환환 박막을 chemical solution deposition 방법으로 Pt/Ti/SiO2/Si(100) 기판위에 증착하였다. Bi 자리에 Pb와 Co를 20 at.% 치환하였으며, 치환된 $Bi_{0.8}Pb_{0.2}FeO_3$ (BPFO), $Bi_{0.8}Co_{0.2}FeO_3$ (BCFO) 박막의 구조적, 자기적 특성 변화를 BFO 박막과 비교하여 조사하였다. XRD 패턴을 분석한 결과 BPFO, BCFO 박막들은 모두 rhombohedrally distorted perovskite 구조였으며 불순물인 pyrochlore 상이 약하게 관측되었다. 치환이 이루어진 BPFO, BCFO 박막들의 자기 이력곡선은 안정된 포화곡선을 나타냈으며 BFO의 포화값(5 emu/$cm^3$)에 비해 크게 증가된 55 emu/$cm^3$, 35 emu/$cm^3$의 값을 나타냈다. 또한 보자력장(coercive field, Hc)값도 BFO의 500 Oe보다 크게 증가된 1,200 Oe, 800 Oe의 값을 보였다.

• 한국표면공학회지
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• 제38권3호
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• pp.112-117
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• 2005

In this paper, CdS thin films, which were widely used as a window layer of the CdS/CdTe and the $CdS/CuInSe_2$heterojunction solar cell, were grown by chemical bath deposition, and the structural, optical and electrical properties of the films on reaction temperatures were investigated. Cadmium acetate and thiourea were used as cadmium and sulfur source, respectively. And Ammonium acetate was used as the buffer solution. As the reaction temperatures were increased, the deposition rate of CdS fllms prepared by CBD was increased and the grain size was large due to increasing reaction rate in solution, also optical transmittance of the films in visible lights was increased on rising reaction temperatures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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• pp.28-28
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• 2001

• Journal of Electrochemical Science and Technology
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• 제10권1호
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• pp.61-68
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• 2019

Well aligned $SnO_2$-doped ZnO nanorods were prepared by single step or 2-step electrochemical depositions in a mixture solution of zinc nitrate hexahydrate, ammonium hydroxide solution and 0.1 M tin chloride pentahydrate. The morphologies of electrochemically deposited $SnO_2$-doped ZnO were transformed from plain (or network) structures at low reduction potential to needles on hills at high reduction potential. Well aligned ZnO was prepared at intermediate potential ranges. Reduction reagent and a high concentration of Zn precursor were required to fabricate $SnO_2$ doped ZnO nanorods. When compared to results obtained by single step electrochemical deposition, 2-step electrochemical deposition produced a much higher density of nanorods, which was ascribed to less potential being required for nucleation of nanorods by the second-step electrochemical deposition because the surface was activated in the first-step. Mechanisms of $SnO_2$ doped ZnO nanorods prepared at single step or 2-step was described in terms of applied potential ranges and mass-/charge- limited transfer.

• 한국세라믹학회지
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• 제42권7호
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• pp.521-524
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• 2005

ZnO 2-D nanowall structure with around 100 nm thickness, which is composed of tens of nm scale ZnO single crystals, was fabricated through the low temperature chemical solution growth method. Electro Chemical Deposition (ECD) technique was applied to attach the ZnO seed crystals on ITO coated glass substrate. The ZnO nanowall structure was grown in the 0.015 mol$\%$ of aqueous solution of zinc nitrate and hexamethenamine at 60$^{\circ}C$ for 20 - 40 h. The nanowall structure depends on the ECD condition or the applied voltage and duration time. The nanowall shows a photoluminescence around 550 - 700 nm spectrum range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.339-342
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• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.