• Tribology and Lubricants
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• v.15 no.1
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• pp.90-97
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• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.29-30
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• 2007

• 한국가시화정보학회:학술대회논문집
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• 2004.11a
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• pp.48-51
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• 2004

Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.433-434
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• 2002

Chemical mechanical polishing refers to a process by which silicon and partially-processed integrated circuits (IC's) built on silicon substrates are polished to produce planar surfaces for the continued manufacturing of IC's. Chemical mechanical polishing is done by pressing the silicon wafer, face down, onto a rotating platen that is covered by a rough polyurethane pad. During rotation, the pad is flooded with a slurry that contains nanoscale particles. The pad deforms and the roughness of the surface entrains the slurry into the interface. The asperities contact the wafer and the surface is polished in a three-body abrasion process. The contact of the wafer with the 'soft' pad produces a unique elastohydrodynamic situation in which a suction force is imposed at the interface. This added force is non-uniform and can be on the order of the applied pressure on the wafer. We have measured the magnitude and spatial distribution of this suction force. This force will be described within the context of a model of the sliding of hard surfaces on soft substrates.

• Design & Manufacturing
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• v.13 no.1
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• pp.13-18
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• 2019

The size and prospects of the domestic semiconductor equipment market are increasing every year. In the case of various parts used inside semiconductor equipments, high durability such as high strength and abrasion resistance is demanded. Particularly, the gases used in semiconductor production processes are toxic. In order to prevent such toxic gas leakage, a precision processing technique and a surface treatment technique for preventing corrosion are required. Electro-polishing is an electro-chemical method of polishing a metal surface to make it smooth and polished. Electro-polishing is mainly used in the finishing process of metal surface. Unlike mechanical polishing, electro-polishing is used in many fields, such as fine chemical etching equipment, since no damaged layer or burr, fine polishing groove and particles are generated. However, in order to withstand the gas used in the semiconductor equipment, the parts must have high corrosion resistance. However, the surface hardness generally become lowered through electro-polishing. Therefore, in this study, surface hardness were experimentally observed before and after electro-polishing. Then, a method of improving hardness by preparing a nitrided layer by plasma ion nitriding treatment.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.179-184
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• 2000

Chemical Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active and abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves hydrodynamic behavior. The liquid slurry is trapped between the work piece and pad forming a hydrodynamic film. For the first step to understand material removal mechanism of the CMP process, the hydrodynamic analysis is done with semiconductor wafer. Three-dimensional Reynolds equation is applied to get pressure distribution of the slurry film. Shear stress distributions on the wafer surface are also analyzed

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.263-268
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• 1999

Langasite, a new piezoelectric material was polished by CMP(chemical mechanical polishing). To enhance the polishing rate, alumina abrasives were added to commercial ILD1300 slurry which contains silica abrasive. The effect of added alumina 0 the silica slurry on the polishing rate and damage of langasite was investigated, Experimental results show that the polishing rate and roughness increases with increasing added alumina particle size, Crystallinity of the langasite is also lowered by alumina addition.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.53-57
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• 2007

In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.221-224
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• 2002

Recently, simulation of Chemical Mechanical Polis hing is becoming more important because Process parameters on the material removal rate are complicated. And pattern-depent effects are a key concern in CMP processes. In this paper, we have been studied the changes of pattern density vs. oxide thickness with Stine's simulation model. We also have estimated the effective density using optimal window size with density mask, and have made a study of the change of oxide thickness as a function of polishing time.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.1
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• pp.196-203
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• 2002

Generally, non-uniformity and removal rate are important factors on measurements of both wafer and die scale. In this study, we verify the effects of the pressure and relative velocity on the results of the chemical mechanical polishing and the effect of pattern density on inter layer dielectric chemical mechanical polishing of patterned wafer. We suggest an appropriate modeling equation, transformed from Preston\`s equations which was used in glass polishing, and simulate the removal rate of patterned wafer in chemical mechanical polishing. Results indicate that the pressure and relative velocity are dominant factors for the chemical mechanical polishing and pattern density effects on removal rate of pattern wafers in die scale. The modeling is well agreed to middle and low density structures of the die. Actually, the die used in Fab. was designed to have an appropriate density, therefore the modeling will be suitable for estimating the results of ILD CMP.