• Textile Coloration and Finishing
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• v.1 no.1
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• pp.7-18
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• 1989

The distinguishing characteristic of the glow discharge is that chemical reaction induced by partially ionized gases are limited only to the substrate surface. Most studies have been done on the plasma etching and polymerization. The graft polymerization in vapour phase by cold plasma has been rarely investigated. In this study the system of tub3ar reaction chamber with capacitively coupled electrode of alternative current of 60 Hz was employed for the graft polymerization. The graft polymerization of Acylic Acid(AA) onto the poly (ethylene terephthalate) (PET) was carried out by treatment of PET film and fabric by cold plasma (glow discharge of argon gas), followed by the supply of AA vapour. The graft yield was about 1 wt%. The surface property was determined by contact angle, the surface tension was evaluated by zisman’s plot and equation of surface tension mesurement. The results were as follows: 1. In order to obtain lower contact angle, it was effective to avoid the vicinity of electrodes for a setting position of substrate. 2. Contact angle affected on the monomer pressure and its duration of exposure to the acid vapour. 3. Polymer radical formation was influenced by the changes of the value of current density and plasma treatment time. 4. Total surface tension of plasma grafted PET film increased. With an increase in the carboxylic acid content, the dispersion force decreased, while, the polar force and hydrogen bonding force increased. 5. The contact angle decreased from $75^\circ$ to around $30^\circ$ by plasma grafting. There was no ageing effect on the contact angle after 4 months.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.16.1-16.1
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• 2011

$TiO_2$ is a promising material for gas sensors. To achieve high sensitivities, the material should exhibit a large surface-to-volume ratio and possess the high accessibility of the gas molecules to the surface. Accordingly, a wide variety of porous $TiO_2$ nanomaterials synthesized by wet-chemical methods have been reported for gas sensor applications. Nonetheless, achieving the large-area uniformity and comparability with well-established semiconductor production processes of the methods is still challenging. An alternative method is soft-templating which utilizes nanostructured inorganic or organic materials as sacrificial templates for the preparation of porous materials. Fabrication of macroporous $TiO_2$ films and hollow $TiO_2$ tubes by soft-templating and their gas sensing applications have been reported recently. In these porous materials composed of assemblies of individual micro/nanostructures, the form of links or necks between individual micro/nanostructures is a critical factor to determine gas sensing properties of the material. However, a systematic study to clarify the role of links between individual micro/nanostructures in gas sensing properties of a porous metal oxide matrix is thoroughly lacking. In this work, we have demonstrated a fabrication method to prepare highly-ordered, embossed $TiO_2$ films composed of anatase $TiO_2$ hollow hemispheres via soft-templating using polystyrene beads. The form of links between hollow hemispheres could be controlled by $O_2$ plasma etching on the bead templates. This approach reveals the strong correlation of gas sensitivity with the form of the links. Our experimental results highlight that not only the surface-to-volume ratio of an ensemble material composed of individual micro/nanostructures but also the links between individual micro/nanostructures play a critical role in evaluating the sensing properties of the material. In addition to this general finding, the facileness, large-scale productivity, and compatability with semiconductor production process of the proposed fabrication method promise applications of the embossed $TiO_2$ films to high-quality sensors.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.29-34
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• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/C1$_2$ and CF$_4$/C1$_2$ Plasma. The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Cl$_2$/Ar gas mixing ratio of 8/2, an RF power of 800 W, a do bias of-200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium was not only etched by chemical reactions with Cl atoms, but also assisted by Ar ion bombardments in Ar/C1$_2$ plasma. In CF$_4$/C1$_2$ plasma, yttrium formed nonvolatile YF$_{x}$ compounds and remained on and the etched surface of YMnO$_3$. Manganese etched effectively by forming volatile MnCl$_{x}$ and MnF$_{y}$. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of the YMnO$_3$ thin film is more easily damaged by the Af ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.cts.s.

• Journal of Radiation Protection and Research
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• v.2 no.1
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• pp.1-8
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• 1977

A base of photographic posi-film which is commecially available has been found to be a possible alpha-particle track detector. Its neutron dosimetric characteristics, i. e., alpha-particle track registrating efficiency and optimum condition of track formation by chemical etching, have been determined experimentally. The range of neutron fluence and dose capable of being measured by a neutron dosimeter consisting of alpha-particle radiator foils $(^{10}B\;and\;^{27}Al)$ and posi-flim solid state track detector, has been estimated on the basis of experimental results and theoryetical background. This detector seems to be useful for neutron dosimetry because of many favorable properties, i. e., simplicity, cheapness and a wide range of sensitivitiy.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.3 s.174
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• pp.603-612
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• 2000

Corrosion characteristics on the 12Cr alloy steel of turbine blade was electro-chemically investigated in 3.5wt% NaCI and 12.7wt% Na2S04 solution, respectively. Electro-chemical polarization test, Huey test and Oxalic acid etching test were previously conducted to estimate corrosion susceptibility of the material. And, using the horizontal corrosion fatigue tester, corrosion fatigue characteristics of 12Cr alloy steel in distilled water, 3.5wt% NaCI solution, and 12.7wt%(1M) Na2S04 solution were also fracture-mechanically estimated and compared their results. Parameter considered was room temperature, 60'C and 90'C. Corrosion fatigue crack length was measured by DC potential difference method.Obtained results are as follows,1) 12Cr alloy steel showed high corrosion rate in 3.5wt% NaCI solution and Na2S04 solution at high tempratue.2) Intergranular corrosion sensitivity of 12 Cr alloy was smaller than austenitic stainless steel.3) Corrosion fatigue crack growth rate in 3.5wt% NaCI and 12.7wt%(IM) Na2S04 solution is entirely higher than in the distilled water, and also increased with the temperature increase.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.3 no.2
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• pp.152-165
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• 1993

This study was performed at eleven small-sized plating factories located in Seoul, Incheon, Ansan, and Taejeon from July 21 to October 6, 1992. The major objectives of this study were to evaluate worker exposure to hexavalent chromium and local exhaust ventilation (L.E.V.) systems at the chromium plating operations. The most suitable L.E.V. systems for chromium plating tanks were designed as examples for recommendation to the industry. The results are summarized as follows. The range of chromium plating operations investigated included decorative, hard, and black chromium plating on several kinds of parts. Most of plating tanks were not equipped with proper control methods against emission of hexavalent chromium mists and workers were not wearing appropriate personal protectives. The ariborne hexavalent chromium concentrations showed an approximate lognormal distribution. The geometric means of both personal and area samples were within the Korean and ACGIH standards, $50{\mu}g/m^3$. However, in comparison with the NIOSH criterion, $1{\mu}g/m^3$, the geometric means of personal samples at two factories and the geometric means of area samples at two factories exceeded it. The geometric means of personal and area samples of high exposure groups (above the NIOSH criterion) were 7 and 27 times higher than those of low exposure groups (below the NIOSH criterion), respectively. The L.E.V. systems of high exposure groups were improperly designed, and the factory with the highest exposure level had no L.E.V. systems at all on chemical etching process. Whereas at factories of low exposure groups, mist control methods such as mist suppressants, tank cover, and/or auxillary L.E.V. systems were added to L.E.V systems. The evaluation of L.E.V. systems showed that there was no chromium plating operation satisfying the ACGIH criteria for capture velocity, slot velocity, and exhaust rate simultaneously. To increase performance of L.E.V. systems, it must be designed to minimize the impact of boundary layer separation. Push-pull ventilation hood and downward plenum ventilation hood were suggested for the Korean industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.236.2-236.2
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• 2014

세계 반도체 시장은 컴퓨터 기능이 더해진 모바일 기기의 수요가 증가함에 따라 메모리반도체의 시장규모가 최근 빠른 속도로 증가했다. 특히 모바일 기기에서 저장장치 역할을 하는 비휘발성 반도체인 NAND Flash Memory는 스마트폰 및 태블릿PC 등 휴대용 기기의 수요 증가, SSD (Solid State Drive)를 탑재한 PC의 수요 확대, 서버용 SSD시장의 활성화 등으로 연평균 18.9%의 성장을 보이고 있다. 이러한 경제적인 배경 속에서 NAND Flash 미세공정 기술의 마지막 단계로 여겨지는 1Xnm 공정이 개발되었다. 그러나 1Xnm Flash Memory의 생산은 새로운 제조설비 구축과 차세대 공정 기술의 적용으로 제조비용이 상승하는 단점이 있다. 이에 따라 제조공정기술을 미세화하지 않고 기존의 수평적 셀구조에서 수직적 셀구조로 설계 구조를 다양화하는 기술이 대두되고 있는데 이 중 Flash Memory의 대용량화와 수명 향상을 동시에 추구할 수 있는 3D NAND 기술이 주목을 받게 되면서 공정기술의 변화도 함께 대두되고 있다. 3D NAND 기술은 기존라인에서 전환하는데 드는 비용이 크지 않으며, 노광장비의 중요도가 축소되는 반면, 증착(Chemical Vapor Deposition) 및 식각공정(Etching)의 기술적 난이도와 스텝수가 증가한다. 이 중 V-NAND 3D 기술에서 사용하는 박막증착 공정의 경우 산화막과 질화막을 번갈아 증착하여 30layer 이상을 하나의 챔버 내에서 연속으로 증착한다. 다층막 증착 공정이 비정상적으로 진행되었을 경우, V-NAND Flash Memory를 제조하기 위한 후속공정에 영향을 미쳐 웨이퍼를 폐기해야 하는 손실을 초래할 수 있다. 본 연구에서는 V-NAND 다층막 증착공정 중에 다층막의 두께를 가상 계측하는 알고리즘을 개발하고자 하였다. 증착공정이 진행될수록 박막의 두께는 증가하여 커패시터 관점에서 변화가 생겨 RF 신호의 진폭과 위상의 변화가 생긴다는 점을 착안하여 증착 공정 중 PECVD 장비 RF matcher와 heater에서 RF 신호의 진폭과 위상을 실시간으로 측정하여 데이터를 수집하고, 박막의 두께와의 상관성을 분석하였다. 이 연구 결과를 토대로 V-NAND Flash memory 제조 품질향상 및 웨이퍼 손실 최소화를 실현하여 제조 시스템을 효율적으로 운영할 수 있는 효과를 기대할 수 있다.

• Economic and Environmental Geology
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• v.15 no.4
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• pp.189-204
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• 1982

The Geodo mine is located in the southern limb of the Hambaeg syncline. Geology of the area consists of Paleozoic-Mesozoic sedimentary Rocks and Cretaceous igneous rocks. The important igneous rocks presumably related to skarnization and ore mineralization in the area, are the early granodiorite and the late porphyritic granodiorite. Two mineralogical types of ore deposits are recognized in the area. They are the Fe-Cu deposits in the Myobong formation and the Au-Bi-Cu deposits in the Hwajeol formation. Contact metamorphism due to granodiorite intrusion includes hornfelsization, exoskarnization and endoskarnization. Wall-rock alterations related to the Fe mineralization are grouped into the hydrothermal replacement skarnization and the hydrothermal filling skarnization. Another hydrothermal alteration is associated with the Cu mineralization. Various mineralogical analyses have been applied for the identification of minerals. They include optical microscopy, chemical analysis, etching test, X-ray diffraction, and infrared absorption spectroscopic analyses. The ore minerals in these ore deposits are classified into two groups;hypogene and supergene minerals. Hypogene minerals consist of magnetite, pyrite, chalcopyrite, and chalcocite. Supergene minerals consist of chalcocite, bornite, and geothite. Ore minerals show various kinds of ore texture: open-space filling, exsolution, replacement, and cementation texture. The gangue minerals consist of quartz, diopside, epidote, garnet and plagioclase in the hornfelsic zone, garnet, diopside, scapolite, actinolite, sericite, chlorite, quartz, and calcite in the skarn zone, and, epidote, chlorite, sericite, quartz, and calcite in the late hydrothermal alteration zone. This study shows that the Fe-Cu deposits are of metasomatic pipe type with the later hydrothermal fillings, and the Au-Bi-Cu deposits are of hydrothermal fissure-filling type. The mineralization is probably related to the intrusion of porphyritic granite.