Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Etching Characteristics of YMnO3 Thin Films in Cl Based Inductively Coupled Plasma

  • Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • Published : 2003.04.01
Download PDF
⟨ Previous Next ⟩

Abstract

Ferroelectric YMnO$_3$ thin films were etched with Ar/C1$_2$ and CF$_4$/C1$_2$ Plasma. The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Cl$_2$/Ar gas mixing ratio of 8/2, an RF power of 800 W, a do bias of-200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium was not only etched by chemical reactions with Cl atoms, but also assisted by Ar ion bombardments in Ar/C1$_2$ plasma. In CF$_4$/C1$_2$ plasma, yttrium formed nonvolatile YF$_{x}$ compounds and remained on and the etched surface of YMnO$_3$. Manganese etched effectively by forming volatile MnCl$_{x}$ and MnF$_{y}$. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of the YMnO$_3$ thin film is more easily damaged by the Af ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.cts.s.

Keywords

References

  1. T. Toshimura, N. Fujimura, and D. Ito, 'Chara cterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed CV measurement; feiroelectricity in YMn$O_3/Y_2O_3$/Sistructure', J. Appl. Phys., Vol. 87, p. 3444, 2000 https://doi.org/10.1063/1.372364
  2. M. Alexe, G. Kastner, D. Hesse, and U. Gosele, 'Ferroelecthc semiconductor heterostructures obta ned by direct wafer bonding', Appl. Phys. Lett., Vol 70, p. 3416, 1997 https://doi.org/10.1063/1.119189
  3. D. Mou, C. S. Petterson, J. Linnros, and K. V. Rao, 'Fabrication and properties of metal/ferroelecthcs/semiconductor diodes on 4H SiC', Appl. Phys. Lett., Vol. 73, p. 1532, 1998 https://doi.org/10.1063/1.122196
  4. S. Imada, T. Kuraoka, E. Tokumitsu, and H. Ishiwara, 'Ferroelectricity of $YMnO_3$ thin films on Pt(111)/$Al_2O_3$(0001) and Pt(111)/$Y_2O_3$(111)/Si(111) structures grown by molecular beam epitaxy', Jpn. J Appl. Phys., Vol. 40, p. 666, 2001 https://doi.org/10.1143/JJAP.40.666
  5. H. N. Lee, Y. T. Kim, and Y. K. Park, 'Memorywindow of highly caxis oriented ferroelectricYMnOg thin films', Appl. Phys. Lett., Vol. 74, p. 3887, 1999 https://doi.org/10.1063/1.124213
  6. H. Kitahara, K. Tadanaga, T. Minami, N. Fujiura, and T. Ito, "Lowering the crystallization tem perature of YMn$O_3$ thin films by the Sol Gel method using an yttrium alkoxide', Jpn. J. Appl. Phys., Vol. 38, p.5448, 1999 https://doi.org/10.1143/JJAP.38.5448
  7. J. Y. Kim, B. K. Kim, K. E. Kim, S. T. Chung, and S. H. Cho, 'Sintering and dielectric properties of YMn$O_3$ ceramics with the effect of Y/Mn ratio', J. of KEEME (in Korean), Vol. 13, p. 137 (2000)
  8. T. Shibano, T. Takenaga, K. Nakamura, and T. Oomori, "Etching of (Ba,Sr)Ti$0_3$ film by chlorine plasma', J. Vac. Sci. Tech. A, Vol. 18, p. 2080, 2000 https://doi.org/10.1116/1.1286026
  9. J. K. Jung and W. J. Lee, 'Dry etching char acteristics of Pb(Zr,Ti)$0_3$ films in $CF_4$ and C1_2/CF_4$inductively coupled plasmas', Jpn. J. Appl. Phys., Vo1.40, p. 1408,2001 https://doi.org/10.1143/JJAP.40.1408
  10. 'Handbook of Chemistry and Physics', edited by D. R. Lide, CRC Press, 1998
  11. B. J. Min, E. G. Chang, and C. I. Kim, 'Dry etching characteristics of YMn$O_3$ thin films using ind actively coupled plasma', J. of KIEEME (inKorean), Vol. 14, p.93 (2001)
  12. D. P. Kim, C. I. Kim, and C. I. Lee, 'Etchingmechanism of YMn$O_3$ thin films in high density $CF_4$/Ar plasma', J. of KIEEME (in Korean), Vol. 14, p.959, 2001