• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.1058-1062
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• 1997

Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1363-1366
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• 2012

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.485-486
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• 2011

• 한국진공학회지
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• 제6권3호
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• pp.242-248
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• 1997

기존의 다공질 실리콘 제작 방법인 chemical etching 방법을 병행하면서 새로운 제 작 방법으로서 dry etching 기술을 적용하여 다공질 실리콘을 제작하였다. 또한, 비교를 위 해 E-beam lithography 기술로 실리콘 구조물을 제작하였는데 이 경우 기술상 문제로 약 0.3$\mu\textrm{m}$의 직경을 가진 구조물이 최소의 크기였다. 따라서 새로운 방법으로 4인치 wafer위에 mask 역할을 해주는 다이아몬드 분말을 spin coater로 입힌 후 Reactive Ion Etching(RIE) 방법으로 미세구조의 다공질 실리콘을 제작하였다. 다양한 조건으로 제작된 sample들의 morphology를 SEM과 AFM 등을 이용하여 분석하였고 이 morphology에 대응하는 PL스펙 트럼을 측정하였다. 그 결과, 다이아몬드 분말을 이용한 dry etching방법으로 제작된 다공질 실리콘의 PL peak의 위치가 chemical etching 방법의 다공질 실리콘의 PL peak 위치인 760nm에 비해 높은 에너지인 590nm로 나타났다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.959-962
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• 2000

In this study, the micro shaft was fabricated by high speed etching process. The integration of the kinetic energy of circumference and the effect of etching takes less time to fabricate the micro shaft than any other conventional methods. First, the end part of the rod(SKD11) was dipped in chemical solution(FeCl$_3$) and the rod rotated at high speed(3500-10000rpm). Experimental setup was simply composed of high speed motor. chemical solution and $\Phi$ 1 mm rod. The main factors of diameter control are chemical concentration, reaction time and rpm. has a result. the diameter of the dipped rod was decreased by 200${\mu}{\textrm}{m}$ by high speed rotation and its shape and surface was good. From this experiment, we found the possibility to manufacture micro shaft without very expensive equipment.

• 반도체디스플레이기술학회지
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• 제5권2호
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• pp.41-46
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• 2006

Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

• 반도체디스플레이기술학회지
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• 제16권3호
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• pp.41-46
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• 2017

This study aims to select suitable co-solvents and to obtain optimal process conditions in order to improve process efficiency and productivity through experimental results obtained under various experimental conditions for the etching and rinsing process using liquid carbon dioxide and supercritical carbon dioxide. Acetone was confirmed to be effective through basic experiments and used as the etching solution for MEMS-wafer etching in this study. In the case of using liquid carbon dioxide as the solvent and acetone as the etching solution, these two components were not mixed well and showed a phase separation. Liquid carbon dioxide in the lower layer interfered with contact between acetone and Mems-wafer during etching, and the results after rinsing and drying were not good. Based on the results obtained under various experimental conditions, the optimum process for treating MEMS-wafer using supercritical CO2 as the solvent, acetone as the etching solution, and methanol as the rinsing solution was set up, and MEMS-wafer without stiction can be obtained by continuous etching, rinsing and drying process. In addition, the amount of the etching solution (acetone) and the cleaning liquid (methanol) compared to the initial experimental values can be greatly reduced through optimization of process conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.187-190
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• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2/Ar$ mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• 한국결정성장학회지
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• 제26권4호
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• pp.131-134
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• 2016

Czochralski 법으로 성장한 RE : YAG ($RE=Nd^{3+}\;,Er^{3+}\;,Yb^{3+}$) 단결정의 표면 결함을 측정하는 chemical polishing 및 etching 조건에 대하여 조사하였다. 최적의 chemical polishing 조건은 시편을 수직 방향으로 고정하고 85 % $H_3PO_4$ 용액에서 $330^{\circ}C$, 30분 동안 진행한 것이었다. 또한 최적의 chemical etching 조건은 85 % $H_3PO_4$ 용액에서 $260^{\circ}C$, 1시간 동안 진행한 것이었고, (111) 면에 $70~80{\mu}m$ 크기의 삼각형 etch pit들이 관찰되었다. 결함 밀도 분석 결과, Nd(1 %) : YAG는 $1.9{\times}10^3$개/$cm^2$, Er(7.3 %) : YAG는 $4.3{\times}10^2$개/$cm^2$, Yb(15 %) : YAG는 $5.1{\times}10^2$개/$cm^2$로 측정되었다.