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http://dx.doi.org/10.6111/JKCGCT.2016.26.4.131

Analysis of surface defect in RE : YAG (RE = Nd3+, Er3+, Yb3+) single crystal using chemical polishing and etching  

Shim, Jang Bo (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology)
Kang, Jin Ki (NTS Ltd.)
Lee, Young Kuk (Thin Film Materials Research Center, Korea Research Institute of Chemical Technology)
Abstract
The conditions for chemical polishing and etching technique were investigated to reveal surface defects in RE : YAG ($RE=Nd^{3+},\;Er^{3+},\;Yb^{3+}$) single crystals grown by Czochralski method. The optimal condition for chemical polishing was in 85 % $H_3PO_4$ solution at $330^{\circ}C$ for 30 minutes with a specimen fixed in the vertical direction. In addition, the optimal condition for chemical etching was in 85 % $H_3PO_4$ solution at $260^{\circ}C$ for 1 hour, and $70{\sim}80{\mu}m$ sized triangular etch pits were observed on (111) face. As a result of defect density analysis, $1.9{\times}10^3/cm^2$ for Nd(1 %) : YAG, $4.3{\times}10^2/cm^2$ for Er(7.3 %) : YAG, and $5.1{\times}10^2/cm^2$ for Yb(15 %) : YAG were measured.
Keywords
YAG; Chemical polishing; Chemical etching; Etch pit density;
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