• Journal of Information Display
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• 제11권1호
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• pp.8-11
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• 2010

In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.

• 한국세라믹학회지
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• 제56권2호
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• pp.111-129
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• 2019

Recently, all-solid-state batteries (ASSBs) have attracted increasing interest owing to their higher energy density and safety. As the core material of ASSBs, the characteristics of the solid electrolyte largely determine the performance of the battery. Thus far, a variety of inorganic solid electrolytes have been studied, including the NASICON-type, LISICON-type, perovskite-type, garnet-type, glassy solid electrolyte, and so on. The garnet Li₇La₃Zr₂O₁₂ (LLZO) solid electrolyte is one of the most promising candidates because of its excellent comprehensively electrochemical performance. Both, experiments and theoretical calculations, show that cubic LLZO has high room-temperature ionic conductivity and good chemical stability while contacting with the lithium anode and most of the cathode materials. In this paper, the crystal structure, Li-ion transport mechanism, preparation method, and element doping of LLZO are introduced in detail based on the research progress in recent years. Then, the development prospects and challenges of LLZO as applied to ASSBs are discussed.

• 한국세라믹학회지
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• 제39권2호
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• pp.184-189
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• 2002

본 연구는, PbO-base 유리계의 정보와의 비교 등을 통해 Bi-base 조성 PDP rib으로의 새로운 유리조성 설계를 위한 기초연구의 일환이다. PbO와 유사한 밀도값 및 작업 용이성을 갖고 있는 Bi를 도입한 $Bi_2O_3-B_2O_3-ZnO$ 조성계에 대해, 연화점, 열팽창계수, 에칭성, 유전율 등의 특성측정 및 XPS로 조성에 따른 구조변화 등을 조사하였다. $Bi_2O_3$를 50∼80 wt%까지 폭넓게 첨가된 $Bi_2O_3-B_2O_3-ZnO$계 유리들은 조성에 따라 연화점이 400∼480$^{\circ}C$, 열팽창계수가 $68{\sim}72{\times}10^{-7}/^{\circ}C$, 유전상수는 13∼25으로서 동조성의 Pb-base 조성계와 유사한 물성치를 나타내었다. 특히, Bi의 함유량이 70∼65 wt%의 조성의 경우, 성분 및 물성의 미세조정 등을 통해 rib 재료의 출발조성으로서 적용가능성이 확인되었다. $Bi_2O_3$의 양이 감소함에 따라 $O_{1s}$ peak에서의 결합에너지의 증가와 반가폭(FWHM)이 감소하였는데, 이는 비가교산소의 증가에 기인하였다.

• 한국결정성장학회지
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• 제6권2호
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• pp.238-246
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• 1996

$\beta$-SiC와 AIN의 혼합분말로부터 열간가압소결에 의하여 고밀도의 SiC-AIN 고용체가 $1870^{\circ}C$에서 $2030^{\circ}C$ 사이의 온도범위에서 제조되어졌다. 온도와 SiC/AIN의 비 및 seed의 존재에 따라 AIN과 $\beta$-SiC(3C) 분말의 반응은 2 H (wurzite) 구조로의 전이를 나타내었다. 결정상들은 SiC-rich 및 AIN-rich 고용체로 구성되었다. $2030^{\circ}C$, 1시간에서 5 wt%의 $\alpha$-SiC seed를 첨가한 50 % AIN/50% SiC의 조성에 대하여 완전한 고용체가 얻어졌으며, 미세구조가 비교적 균일한 2 H상의 결정립 크기를 가지고균일한 성장경향을 나타내었다. SiC-AIN 고용체에 있어서 $\alpha$-SiC seed의 변수가 전이기구 및 결정립의 크기와 모양을 비롯한 결정립 크기의 분포, 조성의 불균일성과 구조적 결함 등에 영향을 미칠 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• 한국융합학회논문지
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• 제8권5호
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• pp.161-167
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• 2017

상온에서 단일소자의 경우 $0.98{\mu}A$ 문턱전류를 나타내는 $32{\times}32$ 광양자테 레이저 어레이를 제작하였다. 제작된 어레이의 전체 소자들의 문턱전류 및 밀도, 전압은 20 mA, $0.068A/cm^2$, 1.38 V의 값을 나타내었다. 발광 광양자테 어레이는 GaAs 물질이 다중-양자 우물 활성 영역을 구성하고, 칩이 차지하는 면적은 $1.65{\times}1.65mm^2$였으며, 소자들의 피크파워 파장은 $858.8{\pm}0.35nm$, 상대적인 레이저 세기는 $0.3{\pm}0.2$, 선폭은 $0.2{\pm}0.07nm$로 비교적 균일한 특성을 보였다. 또한, 레이저 어레이의 각도 의존적 청색 이동 특성을 이용한 파장 분할 멀티플렉싱 시스템 실험을 진행하였고, 각도에 따라 10 nm 정도 파장이 변하는 현상을 발견하였으며, 거리에 따른 레이저 세기를 측정한 결과 6 m에서도 감지할 수 있음을 확인하였다.

• The Plant Pathology Journal
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• 제36권4호
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• pp.335-345
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• 2020

Tomato grey mould has been one of the destructive fungal diseases during tomato production. Ten mM of menadione sodium bisulfite (MSB) was applied to tomato plants for eco-friendly control of the grey mould. MSB-reduced tomato grey mould in the 3rd true leaves was prolonged at least 7 days prior to the fungal inoculation of two inoculum densities (2 × 10⁴ and 2 × 10⁵ conidia/ml) of Botrytis cinerea. Protection efficacy was significantly higher in the leaves inoculated with the lower disease pressure of conidial suspension compared to the higher one. MSB-pretreatment was not effective to arrest oxalic acid-triggered necrosis on tomato leaves. Plant cell death and hydrogen peroxide accumulation were restricted in necrotic lesions of the B. cinereainoculated leaves by the MSB-pretreatment. Decreased conidia number and germ-tube elongation of B. cinerea were found at 10 h, and mycelial growth was also impeded at 24 h on the MSB-pretreated leaves. MSB-mediated disease suppressions were found in cotyledons and different positions (1st to 5th) of true leaves inoculated with the lower conidial suspension, but only 1st to 3rd true leaves showed decreases in lesion sizes by the higher inoculum density. Increasing MSB-pretreatment times more efficiently decreased the lesion size by the higher disease pressure. MSB led to inducible expressions of defence-related genes SlPR1a, SlPR1b, SlPIN2, SlACO1, SlChi3, and SlChi9 in tomato leaves prior to B. cinerea infection. These results suggest that MSB pretreatment can be a promising alternative to chemical fungicides for environment-friendly management of tomato grey mould.

• 한국유기농업학회지
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• 제19권2호
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• pp.229-243
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• 2011

최근에 소비자들의 안전 농산물에 대한 관심과 정부의 정책적인 친환경농업에 대한 지원은 유기농 재배를 지속적으로 발전시켜 왔다. 본 연구는 유기농 재배 과원과 관행 과원간의 토양 물리성과 화학성 및 미생물성에 대한 시기별 비교분석을 통하여 변화양상을 구명하고자 수행되었다. 토양 가비중과 고상 및 경도는 유기농 과원에서 통계적으로 유의성있게 낮게 나타났다. 토양 pH와 유기물 함량은 3월에서 8월까지 증가하는 경향이 나타났고, 유기농 과원에서 관행과원에 비하여 높은 경향을 나타내었다. 전질소와 유효인산은 처리구에 상관없이 3월에서 8월까지 각각 감소하는 경향을 보였으며, 유기농 과원에서 관행과원보다 전질소는 높았으나 유효인산은 낮은 경향을 나타내었다. 토양 미생물 탄소 생체량은 처리구에 상관없이 3월부터 8월까지 증가(유기농 36%, 관행 15%)하였고, 미생물 질소생체량은 6월에 가장 높았고, 유기농 과원에서 관행과원보다 지속적으로 높은 미생물 생체량을 나타내었다. 토양중 dehydrogenase와 chitinase activity는 3월과 8월보다 6월에 가장 높았고, ${\beta}$-glucosidase activity는 시기적으로 점차 감소(유기농 38%, 관행 48%)하였으며, acid phosphatase activity는 증가하였다. 유기농 배 과원토양에서 관행재배에 비하여 6월에 조사된 acid phosphatase activity를 제외하고는 모든 효소활성이 시기에 상관없이 높은 분포를 나타내었다.

• 생태와환경
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• 제36권3호통권104호
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• pp.311-321
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• 2003

낙동강의 하류지역 (낙동강, 서낙동강 및 조만강)의 수질오염에 있어서 저질퇴적층의 영향을 파악하기 위하여 저질과 저층수의 환경을 조사하였다. 세 지점에서 수질을 모니터링 하였을 때, 고수온기인 5 ${\sim}$ 8월에 수표면과 저층간의 수온, 용존 산소, $PO_4\;^{3-}$, $NH_4\;^+$의 차이가 컸다. 7 ${\sim}$ 8월 중에 저층의 용존 산소는 대체로 5 mg $O_2/l$ 이하로 유지되는 빈도가 높았고, 이 기간에 저질-수층 경계면에서 $PO_4\;^{3-}$와 $NH_4\;^+$의 이동이 활발할 것으로 추정된다. 저질에 가까운 저층에서 무기 영양염 농도와 수층chl-a 농도는 지역적으로 낙동강<서낙동강<조만강의 순이었고 수심이 얕고 저질 퇴적층이 발달할수록 수질에 미치는 영향이 컸다. 저질의 유기물 함량은 하류 쪽으로 갈수록 증가하였고, 낙동강보다는 서낙동강 수계에서 더 높았으며 저질의 가비중과 역 상관관계로서 오염도 뿐 아니라 저질입도와 관련이 있었다. 저질 공극수내 $PO_4\;^{3-}$와 $NO_3\;^-$은 수층보다 그 농도가 매우 낮았으나 $NH_4\;^+$와 $SiO_2$농도는 수층과 유사하거나 더 높았다. 공극수 내 $NH_4\;^+$와 $SiO_2$농도는 저질 깊이에 따라 증가하였고, $PO_4\;^{3-}$는 감소한 반면 $NO_3\;^-$은 일정하였다. 반면 저질 내 치환성 무기영양염은 공극수 무기영양염 농도보다 최대 수백배 높았으며 $PO_4\;^{3-}$, $NH_4\;^+$, $SiO_2$는 저질 깊이에 따라 감소했으나 $NO_3\;^-$는 증가하였다.