• 제목/요약/키워드: Chemical cleaning method

검색결과 124건 처리시간 0.023초

초음파 핵연료 세정장비의 시스템 구성과 제거된 크러드의 정량적 무게 측정법 (System Configuration of Ultrasonic Nuclear Fuel Cleaner and Quantitative Weight Measurement of Removed CRUD)

  • 신중철;이학윤;성운학;주영종;김용찬;한욱진
    • 한국압력기기공학회 논문집
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    • 제20권1호
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    • pp.1-6
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    • 2024
  • Crud is a corrosion deposit that forms in equipments and piping of nuclear reactor's primary systems. When crud circulates through the reactor's primary system coolant and adheres to the surface of the nuclear fuel cladding tube, it can lead to the Axial Offset Anomaly (AOA) phenomenon. This occurrence is known to potentially reduce the output of a nuclear power plant or to necessitate an early shutdown. Consequently, worldwide nuclear power plants have employed ultrasonic cleaning methods since 2000 to mitigate crud deposition, ensuring stable operation and economic efficiency. This paper details the system configuration of ultrasonic nuclear fuel cleaning equipment, outlining the function of each component. The objective is to contribute to the local domestic production of ultrasonic nuclear fuel cleaning equipment. Additionally, the paper introduces a method for accurately measuring the weight of removed crud, a crucial factor in assessing cleaning effectiveness and providing input data for the BOA code used in core safety evaluations. Accurate measurement of highly radioactive filters containing crud is essential, and weighing them underwater is a common practice. However, the buoyancy effect during underwater weighing may lead to an overestimation of the collected crud's weight. To address this issue, the paper proposes a formula correcting for buoyancy errors, enhancing measurement accuracy. This improved weight measurement method, accounting for buoyancy effects in water, is expected to facilitate the quantitative assessment of filter weights generated during chemical decontamination and system operations in nuclear power plants.

A method for properties evaluation of activated charcoal sorbents in iodine capture under dynamic conditions

  • Magomedbekov, Eldar P.;Obruchikov, Alexander V.
    • Nuclear Engineering and Technology
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    • 제51권2호
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    • pp.641-645
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    • 2019
  • Experimental equipment for studying the sorption properties of iodine sorbents using radioactive methyliodide has been developed. The sorption capacity index ${\alpha}$ is proposed as a criterion parameter for assessing the quality of impregnated activated charcoals. It was found that this parameter does not depend on the dynamic conditions during the sorbent test. It was shown that values of the sorption capacity index allow to recommend iodine sorbents for industrial gas cleaning processes.

Post Ru CMP Cleaning for Alumina Particle Removal

  • Prasad, Y. Nagendra;Kwon, Tae-Young;Kim, In-Kwon;Park, Jin-Goo
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.34.2-34.2
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    • 2011
  • The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

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질화막 성장의 하지의존성에 따른 적층캐패시터의 이상산화에 관한 연구 (A Study on the Abnormal Oxidation of Stacked Capacitor due to Underlayer Dependent Nitride Deposition)

  • 정양희
    • 한국전기전자재료학회논문지
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    • 제11권1호
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    • pp.33-40
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    • 1998
  • The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

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구리 CMP 후 버핑 공정을 이용한 연마 입자 제거 (Particle Removal on Buffing Process After Copper CMP)

  • 신운기;박선준;이현섭;정문기;이영균;이호준;김영민;조한철;주석배;정해도
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.17-21
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    • 2011
  • Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

A novel method of surface modification to polysulfone ultrafiltration membrane by preadsorption of citric acid or sodium bisulfite

  • Wei, Xinyu;Wang, Zhi;Wang, Jixiao;Wang, Shichang
    • Membrane and Water Treatment
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    • 제3권1호
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    • pp.35-49
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    • 2012
  • In membrane processes, various agents are used to enhance, protect, and recover membrane performance. Applying these agents in membrane modification could potentially be considered as a simple method to improve membrane performance without additional process. Citric acid (CI) and sodium bisulfite (SB) are two chemicals that are widely used in membrane feed water pretreatment and cleaning processes. In this work, preadsorptions of CI and SB were developed as simple methods for polysulfone ultrafiltration membrane modification. It was found that hydrogen bonding and Van Der Waals attraction could be responsible for the adsorptions of CI and SB onto membranes, respectively. After modification with CI or SB, the membrane surfaces became more hydrophilic. Membrane permeability improved when modified by SB while decreased a little when modified by CI. The modified membranes had an increase in PEG and BSA rejections and better antifouling properties with higher flux recovery ratios during filtration of a complex pharmaceutical wastewater. Moreover, membrane chlorine tolerance was elevated after modification with either agent, as shown by the mechanical property measurements.

공용매로 변형된 초임계 이산화탄소를 이용한 이온 주입 포토레지스트 세정 (Stripping of Ion-Implanted Photoresist Using Cosolvent-Modified Supercritical Carbon Dioxide)

  • 정인일;김주원;이상윤;김우식;유종훈;임교빈
    • Korean Chemical Engineering Research
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    • 제43권1호
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    • pp.27-32
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    • 2005
  • 본 연구에서는 다양한 공용매로 변형된 초임계 이산화탄소를 이용하여 웨이퍼 표면에 존재하는 이온주입 포토레지스트(IIP, ion-implanted photoresist) 및 잔류 불순물의 제거 공정을 97, 148, $200^{\circ}C$의 온도와 200, 300, 400 bar의 압력조건에서 수행하였다. 이온주입 포토레지스트는 순수 초임계 이산화탄소에 의해 제거되지 않았으나 팽윤(swelling)되는 것을 확인할 수 있었다. 또한, 단일 공용매 및 비양성자성 용매들의 혼합 공용매로 변형된 초임계 이산화탄소 시스템은 이온주입 포토레지스트를 팽윤시키나, 제거에 효과적이지 못하였다. 그러나 DMSO에 DIW가 혼합된 혼합 공용매(5%, v/v)로 변형된 초임계 이산화탄소 시스템은 $97^{\circ}C$, 200 bar의 온도, 압력 조건에서 30분 동안 세정 실험을 수행한 결과 이온 주입 포토레지스트의 제거에 효과적이었다(약 80%). 본 연구에서 사용된 혼합 공용매로 변형된 초임계 이산화탄소 시스템은 플라즈마 애싱(ashing) 및 산과 용매가 기본이 되는 습식 세정 방법의 대안으로서 화학액의 사용과 폐수를 감소시킬 수 있다.

고구려 고분벽화 오염물질 제거에 관한 연구 (Study on removal method of Brownish black and White crust on Mural in Koguryo Tomb)

  • 한경순;임권웅
    • 보존과학회지
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    • 제22권
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    • pp.99-108
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    • 2008
  • 본 연구는 고구려 벽화고분인 진파리 1, 4호분 벽화의 표면에서 관찰되는 백색과 흑갈색 오염물제거 방안수립을 위해 진행되었으며, 현장 적용실험을 실시하였다. 사전조사에서 금속현미경과 SEM/EDX를 이용하여 백색과 흑갈색 오염물질 시료의 관찰과 성분분석이 실시되었다. 시료에 대한 연구 결과 백색 오염물질은 $CaSO_4$ 혹은 $CaCO_3$로 흑갈색 오염물질은 황산칼슘화합물 혹은 $CaCO_3$와 토양침적물로 추정되며, 백색과 흑갈색 오염물질 제거를 위해 음이온교환수지와 Ammonium bicarbonate를 처리제로 선정하였다. 두 가지 모두 각각의 처리 대상에 대해 양호한 효과를 나타냈으며, 일부 피각형태로 고착화된 오염물질에 대해서는 물리적인 처리법의 병행이 필요한 것으로 확인되었다.

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