• Clinical and Experimental Pediatrics
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• v.52 no.2
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• pp.213-219
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• 2009

Purpose:Iron is a critical nutritional element that is essential for a variety of important biological processes, including cell growth and differentiation, electron transfer reactions, and oxygen transport, activation, and detoxification. Iron is also required for neoplastic cell growth due to its catalytic effects on the formation of hydroxyl radicals, suppression of host defense cell activities, and promotion of cancer cell multiplication. Chronic transfusion-dependent patients receiving chemotherapy may have iron overload, which requires iron-chelating therapy. We performed this study to demonstrate whether the iron chelating agent deferoxamine induces apoptosis in Saos-2 osteosarcoma cells, and to investigate the underlying apoptotic mechanism. Methods:To analyze the apoptotic effects of an iron chelator, cultured Saos-2 cells were treated with deferoxamine. We analyzed cell survival by trypan blue and crystal violet analysis, apoptosis by nuclear condensation, DNA fragmentation, and cell cycle analysis, and the expression of apoptotic related proteins by Western immunoblot analysis. Results:Deferoxamine inhibited the growth of Saos-2 cell in a time- and dose-dependent manner. The major mechanism for growth inhibition with the deferoxamine treatment was by the induction of apoptosis, which was supported by nuclear staining, DNA fragmentation analysis, and flow cytometric analysis. Furthermore, bcl-2 expression decreased, while bax, caspase-3, caspase-9, and PARP expression increased in Saos-2 cells treated with deferoxamine. Conclusion:These results demonstrated that the iron chelating agent deferoxamine induced growth inhibition and mitochondrial-dependent apoptosis in osteosarcoma Saos-2 cells, suggesting that iron chelating agents used in controlling neoplastic cell fate can be potentially developed as an adjuvant agent enhancing the anti-tumor effect for the treatment of osteosarcoma.

• Korean Chemical Engineering Research
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• v.51 no.6
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• pp.666-670
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• 2013

Recovery method of silicon wafer from defective products generated from manufacturing process of silicon solar cells was studied. The removal effect of the N layer and antireflection coating (ARC) of the waste solar cell were investigated at room temperature ($25^{\circ}C$) by variation of concentration of $H_3PO_4$, $NH_4HF_2$, and concentration and types of chelating agent. Removal efficiency was the best in the conditions; 10 wt% $H_3PO_4$ 2.0 wt% $NH_4HF_2$, 1.5 wt% Hydantoin. Increasing the concentration of $H_3PO_4$, the surface contamination degree was increased and the thickness of the silicon wafe became thicker than the thickness before surface treatment because of re-adsorption on the silicon wafer surface by electrostatic attraction of the fine particles changed to (+). The etching method by mixed solution of $H_3PO_4$-$NH_4HF_2$-chelating agents was expected to be great as an alternative to conventional RCA cleaning methods and as the recycle method of waste solar cells, because all processes are performed at room temperature, the process is simple, and less wastewater, the removal efficiency of the surface of the solar cell was excellent.

• Journal of the Korean Chemical Society
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• v.23 no.3
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• pp.141-151
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• 1979

The selective absorption of metal ions by chelating agent-loaded resins was studied in aqueous media. The resins were prepared by loading the conventional anion exchange resin, Dowex 1-X8 (50 to 100 mesh) with chelating agents containing sulfonic group, such as 8-hydroxy-quinoline-5-sulfonic acid (HQS) and 7-nitroso-8-hydroxyquinoline-5-sulfonic acid (NHQS). The stability of the resin was markedly influenced by the following factors; (1) the affinity and concentration of anions in the external solution, (2) the pH of the media. The optimum conditions for the absorption of metal ions were determined with respect to the pH, shaking time, and the effect of anion concentration in the medium. Under the optimum condition the order of the absorption of metal ions such as Fe(Ⅲ), Cu(Ⅱ), Pb(Ⅱ), and Zn(Ⅱ) was in accord with that of the stability constants of the chelates. The total capacities of the resins were found in the range of 0.6∼1.6 mmole metal per gram.

• Korean Chemical Engineering Research
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• v.52 no.5
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• pp.638-646
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• 2014

The effect of in-organic chelating agents with Fe(II) and Fe(III) in modified Fenton was evaluated to degradation BTEX (benzene, toluene, ethylbenzene, xylene). Citric acid and pyrophosphate were used in experimentals and an optimum chelating agent for BTEX degradation was determined. In $H_2O_2$/Fe(III)/citric acid, degradation of BTEX was decreased when concentration of citric acid was increased. In $H_2O_2$/Fe(III)/pyrophosphate, degradation of BTEX was increased when concentration of pyrophosphate was increased and degradation for BTEX was relatively high compared with $H_2O_2$/Fe(III)/citric acid. In $H_2O_2$/Fe(II)/chelating agents, degradation for BTEX was high and pH variation was minimized when molar ratio of Fe(II) and citric acid was 1:1. Optimum molar concentration of Fe(II), citric acid and $H_2O_2$ were 7 mM, 7mM and 500 mM for degradation of 100 mg/L of benzene to obtain best efficiency of $H_2O_2$, least precipitation of iron and best degradation.

• Journal of Ginseng Research
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• v.31 no.3
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• pp.154-158
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• 2007

In order to increase the content of germanium in ginseng adventitious roots, the effects of chelating agents on germanium content and root growth were investigated in the submerged cultures of ginseng adventitious roots. Chelating agents such as citric acid, oxalic acid, phosphoric acid, EDTA (Ethylenediamine tetraacetic acid) or EGTA (Ethylene glycol-bis $({\beta}-aminoethylether)-tetraacetic$ acid) were administrated in the submerged culture of ginseng root containing 50 ppm $GeO_2$. After 6 weeks of cultivation, fresh weight, germanium and saponin contents in the roots were analyzed. Among chelating agents, addition of 1.0mM phosphoric acid was found to be best for germanium accumulation. Under this condition, germanium content increased 1.4 times as compared to that of the control. The germanium content in the adventitious roots also increased with addition of EDTA or EGTA, while they inhibited the growth of ginseng adventitious root. Citric and oxalic acids were not effective for increasing germanium content in adventitious roots. As the results, it suggests that the phosphoric acid can be proved as the optimal agent for the enhancement of germanium accumulation in ginseng adventitious roots. These results can be served as a guideline for the mass production of ginseng adventitious roots containing germanium by large-scale production.

• Membrane and Water Treatment
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• v.6 no.2
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• pp.141-160
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• 2015

This study aims to investigate the impacts of chemical cleaning on the performance of a reverse osmosis membrane. Chemicals used for simulating membrane cleaning include a surfactant (sodium dodecyl sulfate, SDS), a chelating agent (ethylenediaminetetraacetic acid, EDTA), and two proprietary cleaning formulations namely MC3 and MC11. The impact of sequential exposure to multiple membrane cleaning solutions was also examined. Water permeability and the rejection of boron and sodium were investigated under various water fluxes, temperatures and feedwater pH. Changes in the membrane performance were systematically explained based on the changes in the charge density, hydrophobicity and chemical structure of the membrane surface. The experimental results show that membrane cleaning can significantly alter the hydrophobicity and water permeability of the membrane; however, its impacts on the rejections of boron and sodium are marginal. Although the presence of surfactant or chelating agent may cause decreases in the rejection, solution pH is the key factor responsible for the loss of membrane separation and changes in the surface properties. The impact of solution pH on the water permeability can be reversed by applying a subsequent cleaning with the opposite pH condition. Nevertheless, the impacts of solution pH on boron and sodium rejections are irreversible in most cases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.339-342
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• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.804-812
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• 1994

Stable PZT coating sol was prepared using chelating agent, ethylacetoacetate(EAcAc) by sol-gel processing under ambient atmosphere. Through FT-IR spectrum analysis on solution of each reaction step, formation of metal complex was confirmed and prepared PZT sol was stable over several months. Through TG-DTA, XRD, FT-IR spetrum analysis of PZT gel powder, it was understood that the addition of EAcAc could reduce the transition temperature to ferroelectric phase, due to the increased homogeneity by matching the hydrolysis and condensation rates by chelation. Single perovskite phase was obtained by the heat-treatment at 54$0^{\circ}C$ for 30 min. The film was coated on ITO-coated glass substrate by dip coating method. After heat-treatment, PZT thin film had thickness in the range of 20~130 nm. The maximum dielectric constant of its thin film at room temperature and 1 kHz was 128.

• Bulletin of the Korean Chemical Society
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• v.29 no.5
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• pp.969-973
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• 2008

Solvent extraction using a Schiff-base, salen$(NEt_2)_2$, as a chelating agent has been conducted on several water samples to study the determination of trace Cu(II), Mn(II) and Zn(II). Experimental conditions for the formation and extraction of metal complexes were optimized with an aqueous solution similar in composition to the samples. The matrix difference between the sample and standard solutions was approximately matched, and the pH of each sample solution was adjusted to 9.5 with $NaHCO_3/NaOH$ buffer. The concentration of salen$(NEt_2)_2$ was $7.3\;{\times}\;10^{-3}$ mol/L, and the complexes were extracted into MIBK solvent followed by the measurement of AAS absorbance. The potential interference of concomitant ions was investigated, but no interference from alkaline and alkali earth ions was shown in this procedure. The given procedure is precise, as judged from the relative standard deviation of less than 5% for five measured data. The recovery of 93-103% shows that this method is quantitative for such trace metal analysis.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.516-521
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• 2018

Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.