• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.435-440
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• 2002

In this study, we have investigated photo-induced changes of optical energy gap( $E_{OP)}$ and photoluminescence (PL) in amorphous ($\alpha$-) S $e_{100-x}$G $e_{x}$ (x=5, 25 and 33) thin films prepared by conventional thermal evaporation method. In the $\alpha$-S $e_{100-x}$G $e_{x}$ thin film, the $E_{OP}$ is obtained by a linear extrapolation of the ($\alpha$hν)$^{\frac{1}{2}}$ versus hν plot to the energy axis using the optical absorption coefficient ($\alpha$) calculated from the extinction coefficient k measured in the wavelength range of 290~900nm. Although the values of $\Delta$ $E_{OP}$ are very different, all films exhibit photo-induced photo-darkening (PD) effect that is a red shift of $E_{OP}$ . In particular, $\Delta$ $E_{OP}$ in $\alpha$-S $e_{75}$ G $e_{25}$ thin film exhibits the largest value (i, e., $\Delta$ $E^{OP}$ ~40meV for $\alpha$-S $e_{95}$ G $e_{5}$ , $\Delta$ $E_{OP}$ ~200meV for $\alpha$-S $e_{75}$ G $e_{25}$ , $\Delta$ $E_{OP}$ ~130meV for $\alpha$-S $e_{67}$ G $e_{33}$ ). PL spectra in $\alpha$-SeGe by hν$_{HeCd}$ have no-Stokes shift (SS) and show a tendency dependent on both composition and illumination time. We explain the energy-induced phenomena such as the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..tc..

• 한국건축시공학회지
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• 제17권4호
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• pp.385-391
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• 2017

공동주택의 공종별 책임 하자 보증기간은 과학적인 분석에 근거를 두지 않고 있어. 기간의 적절성이 분쟁의 원인이 되고 있다. 이에 따라 본 연구에서는 2010~2011기준 국토교통부 하자심사 분쟁조정위원회에 접수된 하자제기건수 중 공동주택 하자 중 가장 많이 제기된 마감공사의 하자실태를 파악하여 하자보수기간의 적절성을 평가하고자 하였다. 마감공사의 하자청구건수를 분석한 결과 대부분의 공종별 하자는 2년 이후에도 나타나고 있으며, 60% 정도만이 하자담보책임기간 내에 청구되고 있는 실정이다. 공종별 하자는 상호간에 연관성을 가지고 있으며 이러한 점은 시공의 관리 차원에서 고려되어 공법의 개선이 필요한 것으로 나타났다. 공동주택의 선호도에 큰 영향을 끼치는 시공능력평가 순위와 하자발생의 상관성이 낮은 것으로 보아 실제 수행하는 전문업체의 하자관련 검증 절차가 필요한 것으로 판단된다.

• Bulletin of the Korean Chemical Society
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• 제13권2호
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• pp.127-131
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• 1992

Changes in network structures of ${\alpha}-Nb_2O_5$ in the X MgO+(1-X) ${\alpha}-Nb_2O_5$ solid solutions occurring as the MgO doping level (X) was varied were investigated by means of infrared spectroscopy and X-ray analysis. X-ray diffraction revealed that all the synthesized specimens have the monoclinic structure. The FT-IR spectroscopy showed that the system investigated forms the solid solutions in which $Mg^{2+}$ ions occupy the octahedral sites in parent crystal lattice. Electrical conductivities were measured as a function of temperature from 600 to $1050{\circ}$ and $P_{O2}$ form $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. The defect structure and conduction mechanism were deduced from the results. The $1}n$ value in ${\alpha}{\propto}{P_{O2}^{1}n}}$ is found to be -1/4 with single possible defect model. From the activation energy ($E{\alpha}$ = 1.67-1.73 eV) and the1/n value, electronic conduction mechanism is suggested with a doubly charged oxygen vacancy.

• Nuclear Engineering and Technology
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• 제41권1호
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• pp.21-38
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• 2009

The use of multi scale modeling concepts and simulation techniques to study the destabilization of an ultrathin layer of oxide interface between a metal substrate and the surrounding environment is considered. Of particular interest are chemo-mechanical behavior of this interface in the context of a molecular-level description of stress corrosion cracking. Motivated by our previous molecular dynamics simulations of unit processes in materials strength and toughness, we examine the challenges of dealing with chemical reactivity on an equal footing with mechanical deformation, (a) understanding electron transfer processes using first-principles methods, (b) modeling cation transport and associated charged defect migration kinetics, and (c) simulation of pit nucleation and intergranular deformation to initiate the breakdown of the oxide interlayer. These problems illustrate a level of multi-scale complexity that would be practically impossible to attack by other means; they also point to a perspective framework that could guide future research in the broad computational science community.

• 한국표면공학회지
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• 제29권6호
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• pp.660-665
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• 1996

Thin films of indium oxide and indium tin oxide have been prepared by d.c. magnetron sputtering onto the fused silica substrates kept at 90, 200 and $300^{\circ}C$. In order to elucidate the optical absorption process in low energy region below 3 eV, we have analyzed the absorption coefficients obtained from reflectance and transmittance measurements for these films based on the Lucovsky model. It has been found for the first time that a defect center in the band gap is located at 0.8~1.4 eV below the Fermi level in all films and arises from oxygen vacancies in their films. The optical absorption in low energy region is explained to be dominated by the transition of electrons trapped at the positively charged (+2e) oxygen vacancies with s-like nature to the conduction band formed from the 5s-orbit in indium atoms.

• Bulletin of the Korean Chemical Society
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• 제13권3호
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• pp.248-252
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• 1992

$ZrO_2-dopedYb_2O_3solid$ solutions containing 1, 3, 5, 7 and 9 mol% $ZrO_2were$ synthesized from spectroscopically pure $Yb_2O_3$ and $ZrO_2$ powders and found to be rare earth C-type structure by XRD technique. Electrical conductivities were measured as a function of temperatures from 700 to $1050^{\circ}C$ and oxygen partial pressures from 1${\times}$$10^-5$ to 2${\times}$ $10^-1$atm. The electrical conductivities depend simply on temperature and the activation energies are determined to be 1.56-1.68 $_eV$. The oxygen partial pressure dependence of the electrical conductivity shows that the conductivity increases with increasing oxygen partial pressure, indicating p-type semiconductor. The $PO_2$ dependence of the system is nearly power of 1/4. It is suggested from the linearity of the temperature dependence of electrical conductivity and only one value of 1/n that the solid solutions of the system have single conduction mechanism. From these results, it is concluded that the main defects of the system are negatively doubly charged oxygen interstitial in low. $ZrO_2doping$ level and negatively triply charged cation vacancy in high doping level and the electrical conduction is due to the electronic hole formed by the defect structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

• 대한화학회지
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• 제37권4호
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• pp.390-395
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• 1993

비화학량론적 화합물 $CeO_2-x의 비호학량 x값과 전기전도도를 600~1200$^{\circ}C$의 온도 범위와 $2{\times}10^{-1}{\sim}1{\times}10^{-4}$ atm이 산소분압 범위에서 측정하였다. 결함생성 엔탈피는 흡열과정임을 보이며 산소분압의존성 도는 1/n 값은 -1/3.18 ∼ -1/3.69까지 변하였다. 전기전도도의 활성화에너지와 1/n값은 각각 1.75 eV 와 -1/4이었다. 비화학량 x값, 전기전도도 $\sigma$값 및 열역학적 데이타로부터 이산화세륨의 결함구조는 1가로 하전된 산소공위이며 과잉금속이 전도성 전자주게의 역할을 하는 n-형 반도체이다.

• 한국콘텐츠학회논문지
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• 제1권1호
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• pp.8-14
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• 2001

본 논문에서는 의료영상에서 특정 장기를 추출하여 질환 부위를 인식하는 알고리즘을 제안한다. 의료영상이 추출되어진 장기 부위에서 질환을 인식하기 위하여 단일 신경회로망을 이용하면 신경회로망의 학습 능력과 일반화 능력이 한정적이므로 성능개선에 많은 문제가 있다. 따라서 추출된 장기로부터 질환부위를 인식하는 것은 신경회로망을 복합적인 방법, 즉 RBF (Radial Basis Function), BP (Back Propagation)로 구성하여 단일 신경회로망의 단점을 극복하였다. 본 논문에서 제안하는 알고리즘은 입력 의료영상의 다양한 형태 변화에 적응력이 뛰어남을 실험결과로 알 수 있었다. 그리고, 전체 알고리즘의 수행시간이 장기추출 알고리즘을 포함하여 일반적으로 10초 이내에 수행됨을 실험 결과 알 수 있었다. 제안된 알고리즘은 실시간으로 의료영상의 질환부위를 인식하여 판별 자동화를 통해 원격의료에 사용 되어 질 수 있다.

• 한국세라믹학회지
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• 제47권1호
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• pp.19-25
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• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.