• Title/Summary/Keyword: Charge density

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A study of rear surface passivation by $Al_2O_3$ thin film for ultra thin silicon solar cells (초박형 태양전지를 위한 후면 패시베이션 막의 특성 연구)

  • Park, Sung-Eun;Kim, Young-Do;Tark, Sung-Ju;Kang, Min-Gu;Kwon, Soon-Woo;Yoon, Se-Wang;Kim, Dong-Hwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.06a
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    • pp.94-94
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    • 2009
  • 최근 실리콘 태양전지는 점점 얇아 지는 추세에 있다. 실리콘 태양전지에 있어 실리콘의 두께를 감소시키는 것은 실리콘 소모량을 줄이는데 있어 필수적인 조건이 되었다. 이에 따라 실리콘 표면의 passivation도 더욱 중요하게 여겨지고 있다. 실리콘 태양전지의 passivation막의 한 종류인 $Al_2O_3$는 다른 산화막 물질들과는 달리 negative fixed charge를 가지고 있고 charge의 양이 다른 산화막의 density보다 높아 p-type 실리콘의 경우 후면 passivation막으로 이용이 고려되고 있다. 본 연구에서는 atomic layer deposition으로 $Al_2O_3$막을 실리콘 위에 증착하여 열처리에 따른 그 특성을 비교하고 태양전지를 제작하였다. $Al_2O_3$막을 rapid thermal annealing을 통해 서로 다른 분위기에서 열처리 한 결과를 capacitance-voltage를 통해 측정하여 비교, 분석하였고 ellipsomety 분석을 통해 광학적 특성을 비교하였다. 또한 열처리 온도의 변화에 따른 $Al_2O_3$내에 charge에 변화가 있다는 것을 관찰하였다. 이러한 charge의 변화가 태양전지의 passivation에 영향을 주는지 관찰하기 위해 Quasi-steady state photoconductace를 통해 lifetime의 변화를 관찰 하였다. 이러한 실험결과로부터 열처리 분위기와 온도를 최적화 하여 태양전지 passivation 특성을 증가시킬 수 있었다.

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Physico-Chemical Characterization of the Layered Double Hydroxide as Pillar Host Material (Pillar Host Material로써 Layered(Mg/Al) Double Hydroxide의 물리화학적 특성화)

  • 형경우;이용석
    • Journal of the Korean Ceramic Society
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    • v.35 no.5
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    • pp.443-450
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    • 1998
  • Layered double hydroxides(LDHs) [{{{{ {Mg }_{1-x } }}{{{{ {Al }_{x } }}({{{{ {OH}_{2 } }})]ζ+({{{{ {CO }`_{3 } ^{2- } ){ }_{x/2 } }}$.${{{{ { yH}_{2 }O }} wioth variation of layer charge densitywere synthesized by co-precipitation methdo since their charge densities have a very important role to be det-ermined the physicochemical properties of layered materials. The XRD IR and thermal studies of them were discussed and the kinetic study for the decarbonation reaction was also carried out. From the results of XRD analysis we found that the lattice parameter and the unit cell volume were linearly decreased with the amount of Al substituents(x) in the vicinity of x=2∼10${\times}$1/3${\times}$10-1 but they had nearly constant values when the x are far from these vicinit. The activation energies for the decarbonation reaction of x=6.8, 10${\times}$1/3${\times}${{{{ { 10}^{-1 } }} were estimated to be 47.0, 37.6, 39.3 kcal/mol The specific surface areas(90-120 m2/g) of stable hy-drotalcite-type LDHs were dractically decreased with increasing of layer charge density.

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Emission Characteristics of Blue Fluorescence Tandem OLED with Materials of CGL (CGL의 재료에 따른 청색 형광 Tandem OLED의 발광 특성)

  • Kwak, Tea-Ho;Ju, Sung-Hoo
    • Journal of the Korean institute of surface engineering
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    • v.47 no.4
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    • pp.210-214
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    • 2014
  • We investigated emission characteristics of tandem organic light emitting devices (OLEDs) with p-type materials as charge generation layer. The tandem OLEDs were fabricated by using $MoO_x$, $WO_x$, C60 and HATCN as p-type material or not using p-type material for charge generation. When HATCN was used as p-type material, it showed high current density at low applied voltage, but increase of efficiency was small because of charge unbalance in emitting layer. In case of tandem OLED not using p-type material, applied voltage increased remarkably because of difficulty of hole injection. In case of $MoO_x$, $WO_x$ or C60 as p-type material, current emission efficiency increased greatly. In particular, current emission efficiency of tandem OLED using $MoO_x$ as p-type material increased up to 3 times than current emission efficiency of single OLED. The Commission Internationale de l'Eclairage (CIE) 1931 color coordinates were changed by overlapping of 504 nm emission wavelength. As a result, emission efficiency of tandem OLED improved compared with single OLED, but driving voltage also increased by increase of organic layer thickness.

Analysis of SOHOS Flash Memory with 3-level Charge Pumping Method

  • Yang, Seung-Dong;Kim, Seong-Hyeon;Yun, Ho-Jin;Jeong, Kwang-Seok;Kim, Yu-Mi;Kim, Jin-Seop;Ko, Young-Uk;An, Jin-Un;Lee, Hi-Deok;Lee, Ga-Won
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.34-39
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    • 2014
  • This paper discusses the 3-level charge pumping (CP) method in planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) devices to find out the reason of the degradation of data retention properties. In the CP technique, pulses are applied to the gate of the MOSFET which alternately fill the traps with electrons and holes, thereby causing a recombination current Icp to flow in the substrate. The 3-level charge pumping method may be used to determine not only interface trap densities but also capture cross sections as a function of trap energy. By applying this method, SOHOS device found to have a higher interface trap density than SONOS device. Therefore, degradation of data retention characteristics is attributed to the many interface trap sites.

Impact of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

  • Kang, Min-Seok;Bahng, Wook;Kim, Nam-Kyun;Ha, Jae-Geun;Koh, Jung-Hyuk;Koo, Sang-Mo
    • Journal of Electrical Engineering and Technology
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    • v.7 no.2
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    • pp.236-239
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    • 2012
  • In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

A Study on the Electrification Mechanism in UHV Transformer by Couette Flow (Couette 흐름현상을 이용한 초고압변압기의 유동대전 기구 연구)

  • 곽희로;정용기;권동진
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.9 no.4
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    • pp.93-102
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    • 1995
  • The purpose of this paper is to analyze the streaming electrification mechanism (SEM) generated in UHV transformer. This experiment used Couette Charger and interpreted the mechanism hydromechanically and electromagnetically. This work estimated the turbulent core density ($\rho$o) by measuring the short circuit current (isc) and the open circuit voltage (νoc) generated in Couette Charger and also studied the changes of the short circuit (isc), the open circuit voltage (νoc), the turbulent core density ($\rho$o) and the conductivity ($\sigma$) with adding BTA to restrain streaming electrification. as a result adding BTA increased the conductivity of oil and decreased the turbulent core density($\rho$o).

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CFD Simulation Tool for Anode-Supported Flat-Tube Solid Oxide Fuel Cell

  • Youssef M. Elsayed.;Lim, Tak-Hyoung;Song, Rak-Hyun;Lee, Seung-Bok;Shin, Dong-Ryul
    • Journal of the Korean Electrochemical Society
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    • v.9 no.4
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    • pp.151-157
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    • 2006
  • A two-dimensional numerical model to study the performance of anode-supported flat-tube solid oxide fuel cell (SOFC) far the cross section of the cell in the flow direction of the fuel and air flows is developed. In this model a mass and charge balance, Maxwell-Stefan equation as well as the momentum equation by using, Darcy's law are applied in differential form. The finite element method using FEMLAB commercial software is used for meshing, discritization and solving the system of coupled differential equations. The current density distribution and fuel consumption as well as water production are analyzed. Experimental data is used to verify a predicted voltage-current density and power density versus current density to judge on the model accuracy.

Discharge Characteristics of a KSTAR NBI Ion Source

  • Chang Doo-Hee;Oh Byung-Hoon
    • Nuclear Engineering and Technology
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    • v.35 no.3
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    • pp.226-233
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    • 2003
  • The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

Dielectric Properties of Barium Titanate with $Sb_2O_3$ and ZnO ($Sb_2O_3$와 ZnO를 첨가한 Barium Titanate의 유전성)

  • 윤기현;김종우;송효일
    • Journal of the Korean Ceramic Society
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    • v.21 no.2
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    • pp.121-126
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    • 1984
  • The dielectric properties of $BaTiO_3$ containing 0~0.3mol% and ZnO respectively as additives were investigated as a function of temperature from $25^{\circ}C$ to 14$0^{\circ}C$ and frequency from 24 KHz to 15MHz. The density of sintered $BaTiO_3$ was increased with addition of increasing to 0.15mol% amounts of $Sb_2O_3$ and the dielectric constant was also increased. This is due to space charge polarization with Ba vacancies. Above 0.15mol% $Sb_2O_3$ the density was decreased and the dielectric constant was also decreased due to occuring the discharge through voids. The density of sintered $BaTiO_3$ was decreased with addition of increasing to 0.15mol% amounts of ZnO and the dielectric constant was decreased due to occuring the discharge through voids. Above 0.15mol% ZnO the density was increased and the dielectric constant was also increased.

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Effects of Soil Component and Index ion on the Surface Charge Characteristics of some Korean arable soils (일부 경작지 토양의 표면전하 특성에 미치는 점토광물, 유기물 및 지표이온의 영향)

  • Ok, Yong-Sik;Choi, You-Suk;Lee, Sang-Eun;Lim, Soo-Kil;Chung, Nam-Hyun;Kim, Jeong-Gyu
    • Korean Journal of Soil Science and Fertilizer
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    • v.34 no.4
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    • pp.237-244
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    • 2001
  • Investigation on the surface charge properties of some Korean arable soils was performed by ion adsorption technique with two kinds of indifferent ion ($Na^+$ and $K^+$) at the range of pH 3 to 9 in bulk solution. The contribution of soil components(organic matter, oxides and clay mineral) on the surface charge density was determined at two soil depth with different solid particle composition When the pH of solution increased, the negative charge of soil surface was increased among the all soils, but positive charge were not appeared above pH 6. apparently. The magnitude of surface charge density measured by NaCl adsorption method showed ra nges of $0.01{\sim}2.84cmol_c{\cdot}kg^{-1}$ and $7.41{\sim}12.20cmol_c{\cdot}kg^{-1}$ at pH 3 and pH 9, respectively. Ion adsorption method using KCl as index ion overestimated than the method using NaCl as index ion. The content of organic matter is the strongest factor on the value of dCEC/dpH.

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