• Title/Summary/Keyword: Charge carriers

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Electrical Transport and Magnetic Properties in ${(LaMn) }_{1-λ }O }_{3 }$ (${(LaMn) }_{1-λ }O }_{3 }$의 전기전도 및 자기적 특성)

  • 정우환
    • Journal of the Korean Ceramic Society
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    • v.35 no.8
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    • pp.885-889
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    • 1998
  • The temperature dependence of dc conductivity and magnetic properties of cation deficient {{{{ { {(LaMn) }_{1-λ }O }_{3 } }} systems has been investigated,. Above 160K the magnetic susceptibility of all samples followed the Curie-Weiss law. The Curie temperature decreased as the cation deficiency increased. This is due to a strong Jahn-Teller effect originated from electrons of {{{{ { Mn}^{3+ } }} In the case of samples annealed in air and oxygen at-mosphere the charge carriers responsible for conduction in the ferromagnetic regime below the Curie tem-perature are believed to have both magnetic and lattice characteristics. However the conduction carriers in the paramagnetic regime above the Curie temperature are though to be formed by hopping process of small polarons which were generated by assistance of the Jahn-Teller effect.

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Charge Transport and Electroluminescence in Insulating Polymers (절연층 폴리머의 전하 전송 및 EL 특성)

  • Choi, Yong-Sung;Ahn, Seong-Soo;Kim, Byung-Chul;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04c
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    • pp.91-97
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    • 2008
  • Polymers submitted to thermo/electrical stress suffer from ageing that can drastically affect their functional behaviour. Understanding the physico/chemical processes at play during ageing and defining transport regimes in which these mechanisms start to be critical is therefore a prime goal to prevent degradation and to develop new formulation or new materials with improved properties. It is thought that a way to define these critical regimes is to investigate under which conditions (in terms of stress parameters) light is generated in the material by electroluminescence (EL). This can happen through impact excitation/ionization involving hot carriers or upon bi-polar charge recombination (a definition that excludes light from partial discharges, which would sign an advanced stage in the degradation process). After a brief review of the EL phenomenology under DC, we introduce a numerical model of charge transport postulating a recombination controlled electroluminescence. The model output is critically evaluated with special emphasize on the comparison between simulated and experimental light emission. Finally, we comment some open questions and perspectives.

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Thioacetic-Acid Capped PbS Quantum Dot Solids Exhibiting Thermally Activated Charge Hopping Transport

  • Dao, Tung Duy;Hafez, Mahmoud Elsayed;Beloborodov, I.S.;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.457-465
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    • 2014
  • Size-controlled lead sulfide (PbS) quantum dots were synthesized by the typical hot injection method using oleic acid (OA) as the stabilizing agent. Subsequently, the ligand exchange reaction between OA and thioacetic acid (TAA) was employed to obtain TAA-capped PbS quantum dots (PbS-TAA QDs). The condensation reaction of the TAA ligands on the surfaces of the QDs enhanced the conductivity of the PbS-TAA QDs thin films by about 2-4 orders of magnitude, as compared with that of the PbS-OA QDs thin films. The electron transport mechanism of the PbS-TAA QDs thin films was investigated by current-voltage (I-V) measurements at different temperatures in the range of 293 K-473 K. We found that the charge transport was due to sequential tunneling of charge carriers via the QDs, resulting in the thermally activated hopping process of Arrhenius behavior.

Single Carrier Spectroscopy of Bisolitons on Si(001) Surfaces

  • Lyo, In-Whan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.13-13
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    • 2010
  • Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.

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Thermoelectric Imaging of Epitaxial Graphene

  • Jo, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.113.2-113.2
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    • 2014
  • Heat is a familiar form of energy transported from a hot side to a colder side of an object, but not a notion associated with microscopic measurements of electronic properties. A temperature difference within a material causes charge carriers, electrons or holes, to diffuse along the temperature gradient inducing a thermoelectric voltage. Here we show that local thermoelectric measurements can yield high sensitivity imaging of structural disorder on the atomic and nanometre scales. Using this imaging technique, we discovered a defect-mediated dimensional evolution of strain-response patterns in epitaxial graphene with increasing thickness.

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An analysis method of reflectance spectra of strongly correlated electron systems

  • Hwang, Jungseek
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.1
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    • pp.14-18
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    • 2013
  • We introduce a generic method to analyze optical 17reflectance spectra of strongly correlated electron systems including high-temperature superconductors by using an extended Drude model and Allen's approach. We explain the process step by step from reflectance through the optical conductivity and the scattering rate to the bosonic spectral function. Through the process we are able to get important information on the interactions between charge carriers from measured optical conductivity of the strongly correlated electron systems including copper oxide and iron pnitide high temperature superconductors.

Partial Discharge Characteristics at a Internal Void Using a Pulse Superimposing Technique (펄스 중첩법을 이용한 내부 보이드에서의 부분방전 특성.)

  • Kang, Ji-Hoon;Shin, Doo-Sung;HwangBo, Seung;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1624-1626
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    • 1997
  • In this paper, a new PD measurement technique of pulse superposition method was proposed in order to investigate both PD mechanism and phase related PD patterns. From the experimental results, we could find that the polarity and the phase angle of the superposed pulse take great effects on PD characteristics and these method make it possible to get the physical information which statistical approach can not give. We could conclude that the changes of PD characteristics in the void surrounded by polymers may be attributed to the injection of charge carriers thereby formation of space charge in the surface and/or the bulk of the polymer.

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Simulation Method of Threshold Voltage Shift in Thin-film Transistors (박막트랜지스터의 문턱전압 이동 시뮬레이션 방안)

  • Jung, Taeho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.5
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    • pp.341-346
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    • 2013
  • Threshold voltage shift caused by trapping and release of charge carriers in a thin-film transistor (TFT) is implemented in AIM-SPICE tool. Turning on and off voltages are alternatively applied to a TFT to extract charge trapping and releasing process. Each process is divided into sequentially ordered processes, which are numerically modeled and implemented in a computer language. The results show a good agreement with the experimental data, which are modeled. Since the proposed method is independent of TFT's behavior models implemented in SPICE tools, it can be easily added to them.

Enhancement of Photo-reduction of Water by Exploiting Zn Doped Mesoporous $TiO_2$

  • Ali, Zahid;Kang, Dae-Joon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.588-588
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    • 2012
  • Zn-doped $TiO_2$ mesoporous microspheres with high photocatalytic activity were synthesized via combined sol-gel and solvothermal methods for photocatalytic water splitting. It is found that the photocatalytic water splitting and photocatalytic degradation activity can be enhanced by doping an appropriate amount of Zn. Our results reveal that Zn doping inhibits the recombination of photo-generated charge carriers of $TiO_2$ and improves the probability of photo-generated charge carrier separation and hence the photocatalytic activity of $TiO_2$.

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Optoelectronic and electronic applications of graphene

  • Yang, Hyun-Soo
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.67.2-67.2
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    • 2012
  • Graphene is expected to have a significant impact in various fields in the foreseeable future. For example, graphene is considered to be a promising candidate to replace indium tin oxide (ITO) as transparent conductive electrodes in optoelectronics applications. We report the tunability of the wavelength of localized surface plasmon resonance by varying the distance between graphene and Au nanoparticles [1]. It is estimated that every nanometer of change in the distance between graphene and the nanoparticles corresponds to a resonance wavelength shift of ~12 nm. The nanoparticle-graphene separation changes the coupling strength of the electromagnetic field of the excited plasmons in the nanoparticles and the antiparallel image dipoles in graphene. We also show a hysteresis in the conductance and capacitance can serve as a platform for graphene memory devices. We report the hysteresis in capacitance-voltage measurements on top gated bilayer graphene which provide a direct experimental evidence of the existence of charge traps as the cause for the hysteresis [2]. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found [3]. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching.

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