• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.376-382
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• 2001

Magnetic and transport properties in the ceramic specimen of L $a_{0.7}$S $r_{0.3}$Fe $O_3$ with orthohombic structure has been investigated. Weak ferromagnetism has been observed in a ceramic sample of L $a_{0.7}$S $r_{0.3}$Fe $O_3$. Large dielectric relaxation of Debye type is observed in paramagnetic states within the temperature range of 130K~200K. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dispersion is related to holes hopping between F $e^{3+}$ and F $e^{4+}$ ions. The temperature dependencies of thermoelectric power and Dc conductivity suggest that the charge carrier responsible for the conduction are strongly localized. These experimental results have been interpreted in terms of a hopping process involving small polaron.n.laron.n.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.244-244
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• 2012

Polymer memory devices have attracted considerable attention because of their advantages such as low cost potential, good scalability, flexibility, simplicity in structure, and large capacity for data storage. Metal/poly (4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/metal system has been found to show an electrical bi-stable behavior. Here, we show a novel set-up of 6F-TPA PI/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found, leading to a write-once-read-many (WORM) behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.297-298
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• 2011

Metal/poly (4,4'-aminotriphen-ylene hexafluoroisopropylidenediphthalimide) (TP6F PI)/metal structure exhibited an electrically volatile phase transition with high (OFF) or low (ON) resistive states when voltage between electrodes swept. Here, we demonstrate a noble set-up in which holes are injected by photoelectron emission process during the voltage sweep instead of direct charge carrier injection via metal electrode, which enables direct investigation into changed electronic structures of TP6F PI both in ON and OFF states using photoemission spectroscopy methods. In the I-V measurement, TP6F PI shows a non-volatile behavior. In spectroscopic results, this non-volatile behavior is leaded from the structural modification of the O=C double bond in phthalimide of TP6F PI by hole injection.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.181-182
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• 2012

본 연구에서는 반도체 기술의 핵심으로 알려있는 플라즈마 표면 처리 공정을 이용하여 인위적으로 그래핀과 기능기 반응을 통한 도핑효과를 일으켜, 전계효과(Electric Field Effect)를 인가하였을 때 그래핀 내에서 발생하는 Electron & Hole carrier 들의 accumulation & Depletion 효과에 의한 Charge Density 변화를 Graphene Field Effect Transistors (GFETs) 소자의 전기적 특성 변화를 확인하였다. 특히, 그래핀 내 Conduction of electron을 높이기 위하여, $N_2+H_2$ 가스 조합을 플라즈마 방전가스로 사용하였으며, Optical Emission Spectroscopy (OES) 및 Langmuir-probe 측정을 통하여 합성가스의 ICP 방전 상태 및 효과를 예측하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.150-150
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• 2014

지구상 존재하는 화석연료의 고갈에 대한 우려와 함께 최근 들어 지구 온난화로 인해 야기되고 있는 심각한 지구환경 문제에 대한 관심이 고조되고 있다. 이산화탄소로 대표되는 지구 온난화를 일으키는 공해물질의 많은 부분이 현재 주에너지원으로 사용되는 화석연료에 기인하기 때문에 이를 대체할 수 있는 청정에너지 개발은 이미 세계적 당면 과제라고 할 수 있다. 그 중, 수소에너지는 청정에너지로써의 역할 뿐만 아니라 에너지 저장매체로써의 기능 또한 담당할 수 있어 주목 받고 있다. 본 연구에서는 텅스텐 광촉매를 사용하여 물을 수소와 산소로 분해 하고자 하였고 C70을 도입하여 분해 효율을 향상시키고자 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.113-116
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• 1996

The drain current of the MOSFET in the off state(i.e., Id when Vgs=0V) is undesired but nevertheless important leakage current device parameter in many digital CMOS IC applications (including DRAMs, SRAMs, dynamic logic circuits, and portable systems). The standby power consumed by devices in the off state have added to the total power consumed by the IC, increasing heat dissipation problems in the chip. In this paper, hot-carrier-induced degra- dation and gate-induced-drain-leakage curr- ent under worse case in P-MOSFET\`s have been studied. First of all, the degradation of gate-induced- drain-leakage current due to electron/hole trapping and surface electric field in off state MOSFET\`s which has appeared as an additional constraint in scaling down p-MOSFET\`s. The GIDL current in p-MOSFET\`s was decreased by hot-electron stressing, because the trapped charge were decreased surface-electric-field. But the GIDL current in n-MOS77T\`s under worse case was increased.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.91-96
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• 2005

We report the efficient red light-emitting diodes based on the fluorescent dye 4-(dicyanomethylene)-2-i-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) and 5,6,11,12-tetraphenyl naphthacene (rubrene) codoped in the tris(8-hydroxyquinoline)aluminum $(Alq_3)$. Luminance efficiency of 2.2 cd/A with a Commission International De L'Eclairage (CIE) chromaticity coordinate of x, y = (0.640, 0:350) are achieved at the driving current density of $20\;mA/cm^2$. Adding the rubrene to the DCJTI in tris(8-hydroxyquinoline)aluminum $(Alq_3)$, the red color purity and luminance efficiency improved comparing to the DCJTI only doped devices because the rubrene molecules assist the polarization effect of DCJTI by molecular interaction and enhance the energy transfer from $(Alq_3)$ to DCJTI.

• Proceedings of the Korean Biophysical Society Conference
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• 2002.06b
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• pp.36-36
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• 2002

In the present study, we investigated effects of extracellular zinc (Zn$\^$2＋/) on T-type Ca$\^$2＋/ channel isoforms (${\alpha}$lG, ${\alpha}$lH, and ${\alpha}$lI) stably expressed in HEK 293 cells. Ca$\^$2＋/ currents were measured using 10 mM Ca$\^$2＋/ as a charge carrier under whole cell-ruptured patch configuration. Zn$\^$2＋/ blocked the ${\alpha}$lH currents with a 100- and 200-fold higher potency (IC$\sub$50/ = 2.5 ${\mu}$M) when compared with those for blockade of the ${\alpha}$1G and ${\alpha}$1I currents, respectively.(omitted)