• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.13-13
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• 2010

Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.

• Polymer(Korea)
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• v.29 no.2
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• pp.135-139
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• 2005

In this study, poly(ethylene imine) (PEI) modified by methoxypoly(ethylene glycol) (mPEG) and folate as a gene carrier was synthesized to decrease cytotoxicity and to improve in vivo targeting. mPEG was modified by glutaric anhydride (GA) to endow carboxylic end group, followed by the activation reaction with EDC (N-ethyl-N'-(3-dimethyl-aminopropyl) carbodiimide) and NHS (N-hydroxysuccinimide). The activated carboxylic end group of mPEG was reacted with the amines of PEI to give mPEG graft PEI. The mPEG-folate-graft-PEI was synthesized by the reaction of mPEG-PEI with folate pre-activated by EDC/NHS. The obtained copolymers were characterized by $^1H-NMR$ and FT-IR. Gel retardation assay and fluorescence measurement indicated that DNA formed the complexes with the synthesized copolymers above N/P charge ratio 2. The size of complexes was ranging from 100 nm to 300 m. In conclusion, we confirmed that the synthesized copolymer have the possibility as a DNA carrier.

• Journal of Information Display
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• v.10 no.4
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• pp.143-148
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• 2009

The theoretical current density equations for organic semiconductors was derived according to the internal carrier emission equation based on the diffusion model at the Schottky barrier contact and the mobility equation based on the field dependence model, the so-called "Poole-Frenkel mobility model." The electric field becomes constant because of the absence of a space charge effect in the case of a higher injection barrier height and a lower sample thickness, but there is distribution in the electric field because of the space charge effect in the case of a lower injection barrier height and a higher sample thickness. The transition between the injection- and bulk-limited currents was presented according to the Schottky barrier height and the sample thickness change.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.588-588
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• 2012

Zn-doped $TiO_2$ mesoporous microspheres with high photocatalytic activity were synthesized via combined sol-gel and solvothermal methods for photocatalytic water splitting. It is found that the photocatalytic water splitting and photocatalytic degradation activity can be enhanced by doping an appropriate amount of Zn. Our results reveal that Zn doping inhibits the recombination of photo-generated charge carriers of $TiO_2$ and improves the probability of photo-generated charge carrier separation and hence the photocatalytic activity of $TiO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.72-72
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• 2011

Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.133-137
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• 2007

We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of $1.55{\mu}m$, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.408-411
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• 2019

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at $150^{\circ}C$. The capacitance decreases at $200^{\circ}C$ ZTO heat treated at $150^{\circ}C$ shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.2 s.245
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• pp.186-192
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• 2006

We applied a new charging system using the condensation and evaporation method to charge the submicron particles with a uniform charging performance. The monodispersed NaCl submicron particles were condensed by n-butanol vapor and grew up to micron droplets with a same size, regardless of their initial size. Those condensed droplets were charged in an indirect corona charger. The indirect corona charger consisted of the ion generation zone and the particle charging zone. In the ion generation zone, Ions were generated by corona discharge and some of them moved into the particle charging zone by a carrier gas and mixed with the condensed droplet. And finally, the charged and condensed droplets dried through an evaporator to shrink to their original size. The average charge and penetration rate of the particles before and after evaporation were measured by CPC and aerosol electrometer and compared with those of a conventional corona charger. The results showed that the average charge was $5\~7$ charges and the penetration rate was over $90\%$, regardless of the initial particle size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.354-357
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• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• Macromolecular Research
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• v.11 no.4
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• pp.250-255
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• 2003

We prepared the photorefractive sol-gel glass based on organic-inorganic hybrid materials containing a charge transporting molecule, second-order nonlinear optical (NLO) chromophore, photosensitizer, and plasticizer. Carbazole and 2-{ 4-[(2-hydroxy-ethyl)-methyl-amino]-benzylidene}-malononitrile were reacted with isocyanato-triethoxy silane and the functionalized silanes were employed to fabricate the efficient photorefractive media induding 2,4,7-trinitrot1uorenone (TNF) to form a charge transfer complex. The prepared sol-gel glass samples showed a large net gain coefficient and high diffraction efficiency at a certain composition. As the concentration of photosensitizer increased, the photorefractive properties were enhanced due to an increment of charge carrier density. Dynamic behavior of the diffraction efficiency was also investigated with the concentration of the photosensitizer.