• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.6
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• pp.665-670
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• 2015

In this paper, We proposed a broadband RF amplifier for Microwave band receiver. We also proposed a broadband RF amplifier, designed by using EM simulation for reliable amplification of the received signal. Connected to a source terminal to via, it minimizes those which are the active elements of source-side oscillation as the operating element in an ideal GND, and a constant gain characteristic in a broadband. The goal of this was to obtain stable amplification characteristics. For implementing this architecture, we designed the broadband(500 MHz ~ 7 GHz) RF amplifier by using commercial GaAs FET, which operate on 720 MHz, 4,595 MHz, and 6,035 MHz by impedance matching. The voltage gain is 10.635 dB ~ 14.407 dB(737.5 MHz ~ 6.0575 GHz), P1dB is 20 dBc of band(1st harmonic/2nd harmonic).

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.739-745
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• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.50-58
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• 2000

A Mach-Zehnder type $Ti:LiNbO_3$ optical modulator with a grooved $SiO_2$ buffer layer, was evaluated in terms of an electrode structure. The finite element method was performed to find out the optinum design parameters of electrodes. characteristic impedance ($Z_o$), MW effective index ($N_{eff}$) and attenuation constant ($a_o$)of fabricated traveling-wave electrodes were measured and compared with those obtained by the simulation expectation. For an optical modulator with 11${\mu}m$thick electrodes and a grooved $SiO_2$ buffer layer, the 3dB bandwidth based on the RF measurement results turned out to be 18GHz.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.4
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• pp.103-109
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• 1999

In this paper, we proposed to a new structure of T-shaped fed microstrip slot antenna using 2-layers dielectric material with a directional radiation characteristic. When the slot antenna of bi-directional radiation want to radiate only one direction, the reflector must be set up, but this antenna does'nt need set up reflector. T-shaped microstrip feed line is proposed for a better impedance matching to the microstrip slot antenna in a various range of slot widths. It was also found that the bandwidth of this antenna is proportional to the slot width. It was also found that the radiation resistance of this feed line structure is quite constant and low regardless to the slot width. We also analyzed this antenna by using the FDTD method, and calculating waves and electric field distribution in the time domain. we also are calculated return loss, VSWR, and radiation pattern in the frequency domain by Fourier transforming the time domain results, respectively. From the measured results, bandwidth was 34.8% in the center frequency. These results were in relatively good accordance with the calculated values.

• Proceedings of the KSR Conference
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• 2007.05a
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• pp.1656-1664
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• 2007

This paper introduces a study of improvement for a defect diagnosis of the UM71C track circuit using on HSL. The track circuit on HSL has long operation section. Therefore, when the worker maintain, many times and efforts are spent. So, periodically, we have operated a inspection car. However, we don't know exactly the state changed of the inspection data when track circuit has defect. Actually, We fixed a sample area within operation section on HSL and performed the simulations for short circuit current that is reflected characteristic impedance and propagation factor. We compared the measuring data with the result of the simulation. Using verified simulation program, we estimated inspection data as the malfunction number and the change of capacity of compensation capacitor. These study need to secure of the safety as the train operation. Also, It needs to make a criteria of analysis for the maintenance through comparison simulation data and inspection data.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.1-5
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• 2000

Co-fired resistors for high frequency MCM-C (Multi Chip Module-Cofired) were fabricated and measured their RF properties from DC to 6 GHz. LTCC (Low Temperature Co-fired Ceramics) substrates with 8 layers were used as the substrates. Resisters and electrodes were printed on the 7th layer and connected to the top layer by via holes. Deviation from DC resistance of the resistors was resulted from the resister pastes, resistor size, and via length. From the experimental results, the suitable equivalent circuit model was adopted with resistor, transmission line, capacitor, and inductor. The characteristic impedance $Z_{o}$ of the transmission line from the equivalent circuit can explain the RF behavior of the buried resistor according to the structural variation.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.1
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• pp.215-220
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• 2016

In this paper, a wideband antenna accomplished by adding a double sleeve of a rectangular planar monopole structure is proposed. In order to impedance matching of proposed antenna, the antenna performance was improved by adding two gap sleeves and outer sleeve for double sleeve structure. HFSS simulator of ANSYS corp. was used in order to confirm the antenna parameter characteristic. According to the simulation results, the VSWR was less than 2 for the range of 2.5GHz~10.5GHz. The frequency bandwidth is 8GHz. The frequency range of the actual fabricated antenna was 2.92GHz~10.32GHz, the frequency bandwidth is 7.4GHz. The measured radiation pattern frequency is 3GHz, 6GHz and 9GHz. The results are similar with dipole antenna pattern in all frequency. The antenna size is $40{\times}40mm^2$. The utilization possibility of the ultra-wideband planar monopole antenna could be confirmed according to compare and analyze the simulation and measurement data.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.510-515
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• 2011

In this paper, an artificial transmission line coupler with slotted-triangular patches, which is compact and spacesaving structure, is proposed. The proposed structure has specific features of not only convenience for adjusting the characteristic impedance and the phase of its coupled line by varying the lengths of the slots of the artificial transmission lines in designing a coupler but also the maximized coupling value at less than ${\lambda}$/4 electrical length so that it can be designed in compact and small dimensions, while conventional coupled line couplers are generally limited in compact and miniaturized designs by their ${\lambda}$/4 transmission lines. A fabricated 15 dB test-coupler at 2.4 GHz band by proposed design method shows good agreement with theory and simulation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.7
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• pp.721-727
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• 2014

In this paper, an broadband Schiffman phase shifter is proposed using vertically installed coupled lines. It consists of the typical coupled lines and a extra coupled lines which is installed vertically on the original coupled lines plane. Phase responses of Schiffman phase shifter with vetically installed coupled lines are analyzed in consideration of the phase velocity of two independent transmission modes and the characteristic impedances. The $90^{\circ}$ Schiffman phase shifters with high impedance ratio is realized at 2.4 GHz, which cannot be implemented with the conventional coupled lines. The measured results show that the bandwidth is 1.5~3.2 GHz(70.8 %) within the phase errors ${\pm}5^{\circ}$. The measured return loss is found to be better than 12.4 dB and insertion loss is less than 1.2 dB over the operating frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.1065-1071
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• 2010

In this paper, we proposed a novel harmonic load circuit to design a high efficiency class-F amplifier. The proposed load circuit controls termination impedances to enhance the efficiency of class-F power amplifier. The termination impedances at the 2nd and the 3rd harmonics are showed short and open condition, respectively. Also, a fabricated load circuit showed an attenuation characteristic more than 29 dB, that is enough to eliminate harmonics of the class-F power amplifier. The measured drain and power-added efficiency are 75.7 % and 71.3 % at the point of maximum output power 35.17 dBm.