• 한국농공학회지
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• 제15권1호
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• pp.2853-2877
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• 1973

Models of cross-sections and channels were made in order to measure seepage losses. Cross-sections were made of sand, sandy clay loam and loam, their thicknesses being 30cm and 40cm, respectively. Flow depths kept in the cross-sections were 4cm, 6cm, 8cm and 10cm. Straight and curved channel models were provided so as to measure seepage losses, when constant water depths maintained at the heads of the channels were 7.3cm and 5.7cm, respectively. The results obtained in this experiment are presented as follows: 1) A cumulative seepage loss per unit length at a point in the channel varies in accordance with time and flow depth. The general equation of cumulative seepage loss may be as follows(Ref. to Table V.25): $$q_{cum}=\int_{o}^aq(a)dt+\int_a^bq(b)dt+\int_b^tq(c)dt$$ 2) In case that the variation of water depth through the channel is slight, the total seepage loss may be computed by applying the following general equation: $$\={q}_{cum}{\cdot}x=\int_o^tq_{cum}\frac{{\partial}x}{{\partial}t}dt$$ 3) Because seepage loss varies considerably according to water depth in case that the variation of flow depth through the channel is great, seepage loss should be computed by taking account of the change of flow depth. 4) The relation between time and traveling distance of water flow may be presented as the following general equation(Ref. to Table V.29): $$x=pt^r$$ 5) The ratios of the seepage losses of the straight channel to the curved channel are 1:1.03 for a flow depth of 7.3cm and 1:1.068 for that of 5.7cm. 6) The ratios of the seepage losses occurring through the bottom to those through the inclined plane in the channel cross-section are 1:2.24 for a water depth of 8cm and 1:2.47 for a depth of 10cm in case that soil-layer is 30cm in thickness. Similarly, those ratios are 1:2.62 and 1:2.93 in case of a soil-layer thickness of 40cm(Ref. to Table V.5).

• 한국정보통신학회논문지
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• 제18권8호
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• pp.1925-1930
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• 2014

본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 채널 내 도핑분포함수에 따른 전도중심과 문턱전압이하 스윙의 관계에 대하여 분석하였다. 비대칭 DGMOSFET의 채널크기는 매우 작기 때문에 불순물의 수가 매우 작으므로 고 도핑된 채널의 경우에 대하여 분석하였다. 이를 위하여 포아송방정식에서 해석학적 전위분포모델을 유도하였으며 도핑분포함수는 가우스분포함수를 사용하였다. 해석학적 전위분포모델을 이용하여 전도중심 및 문턱전압이하 스윙모델을 유도하였으며 채널길이 및 채널두께가 변할 때, 도핑분포함수의 변수인 이온주입범위 및 분포편차에 따른 전도중심 및 문턱전압이하 스윙의 변화를 관찰하였다. 결과적으로 전도중심이 상단게이트 단자로 이동할 때, 문턱전압이하 스윙 값은 감소하였으며 단채널 효과에 의하여 채널길이 감소 및 채널두께 증가에 따라 문턱전압이하 스윙 값은 증가하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.26.1-26.1
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• 2007

• 대한전자공학회논문지
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• 제20권2호
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• pp.1-6
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• 1983

MOS 트랜지스터의 채널이 짧아짐에 따라 threshold 전압과 punchthrough 전압이 감소하는 현상을 실리콘 게이트 NMOS 기술로 제작한 소자로써 실험적으로 관찰하였다. 또한 게이트 산화막의 두께를 50nm와 70nm로 감소시키고 보론(boron)을 임플랜트한 소자를 제작하여 게이트 산화막의 두께와 서브스트레이트의 불순물의 농도가 threshold 전압과 Punchthrough 전압의 감소에 미치는 영향을 측정하였다. 또 채널의 길이가 3㎛인 소자에 대하여 hot-electron의 방출을 플로우팅 게이트 패준 방법에 의하여 측정하였으며 그 결과 채널의 길이가 3㎛까지는 hot-electron의 방출은 문제가 되진 않음을 관찰하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집C
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• pp.47-52
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• 2001

Micro-injection molding and microfluidic devices with the help of MEMS technologies including the LIGA process are expected to play important roles in. micro-system industries, in particular the bioapplication industry, in the near future. Understanding fluid flows in micro-channels is important since micro-channels are typical geometry in various microfluidic devices and mold inserts for micro-injection molding. In the present study, both experimental and numerical studies have been carried out to understand the detailed flow phenomena in micro-channel filling process. Three sets of micro-channels of different thickness were fabricated and a flow visualization system was also developed to observe the filling flow into the micro-channels. Experimental flow observations were extensively made to find the effects of channel width and thickness, and effects of surface tension and volume flow rate and so on. And a numerical analysis system has been developed to simulate the filling flow into micro-channels with the surface tension effect taken into account. Discussed are the flow visualization experimental observations along with the predictability of the numerical analysis system.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 추계종합학술대회
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• pp.887-890
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• 2005

DGMOSFET는 CMOS 스케일링의 확장 및 단채널 효과를 보다 효과적으로 제어할 수 있는 유망란 소자이다. 특히 20nm이하의 도핑되지 않은 Si 채널에서 단채널 효과를 제어하는데 가장 효과적이다. 본 논문에서는 DGMOSFET의 해석학적 전송모델을 제시할 것이다. 단채널 효과를 해석학적으로 분석하기 위해 Subthreshold Swing(SS), 그리고 문턱전압 roll-off(${\Delta}V_{th}$) 등을 이용하였다. 여기서 제시된 모델은 이온방출효과와 source-drain 장벽을 통해 캐리어들의 양자 터널링을 포함하여 해석할 것이다. 여기서 제시된 모델은 gate길이, 채널두께, 게이트 산화막 두께 등을 설계하는데 이용할 것이다.

• 한국정보통신학회논문지
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• 제19권11호
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• pp.2643-2648
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도분포에 대한 드레인유도장벽감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자한다. DIBL은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑농도의 분포함수변화에 대하여 DIBL을 관찰하였다. 채널길이, 채널두께, 상하단 게이트 산화막 두께, 하단 게이트 전압 등을 파라미터로 하여 DIBL을 관찰하였다. 결과적으로 DIBL은 채널도핑 농도분포함수의 변수인 이온주입범위 및 분포편차에 변화를 나타냈다. 특히 두 변수에 대한 DIBL의 변화는 최대채널도핑농도가 $10^{18}/cm^3$ 정도로 고도핑 되었을 경우 더욱 현저히 나타나고 있었다. 채널길이가 감소할수록 그리고 채널두께가 증가할수록 DIBL은 증가하였으며 하단 게이트 전압과 상하단게이트 산화막 두께가 증가할수록 DIBL은 증가하였다.

• Design & Manufacturing
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• 제16권3호
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• pp.58-65
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• 2022

Micro-fluidic chip has been fabricated by lithography process on silicon or glass wafer, casting using PDMS, injection molding of thermoplastics or 3D printing, etc. Among these processes, 3D printing can fabricate micro-fluidic chip directly from the design without master or template for fluidic channel fabricated previously. Due to this direct printing, 3D printing provides very fast and economical method for prototyping micro-fluidic chip comparing to conventional fabrication process such as lithography, PDMS casting or injection molding. Although 3D printing is now used more extensively due to this fast and cheap process done automatically by single printing machine, there are some issues on accuracy or surface characteristics, etc. The accuracy of the shape and size of the micro-channel is limited by the resolution of the printing and printing direction or layering direction in case of SLM type of 3D printing using UV curable resin. In this study, the printing direction and thickness of each printing layer are investigated to see the effect on the size, shape and surface of the micro-channel. A set of micro-channels with different size was designed and arrayed orthogonal. Micro-fluidic chips are 3D printed in different directions to the micro-channel, orthogonal, parallel, or skewed. The shape of the cross-section of the micro-channel and the surface of the micro-channel are photographed using optical microscopy. From a series of experiments, an optimal printing direction and process conditions are investigated for 3D printing of micro-fluidic chip.

• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.457-458
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• 2014

In this paper, quantum mechanical simulations of the double-gate ultra-thin body (DG-UTB) MOSFETs are performed according to the International Technology Roadmap of Semiconductors (ITRS) specifications planned for 2020, to devise the way for on-current ($I_{on}$) improvement. We have employed non-equilibrium Green's function (NEGF) approach and solved the self-consistent equations based on the parabolic effective mass theory [1]. Our study shows that the [100]/<001> Ge and GaSb channel devices have higher $I_{on}$ than Si channel devices under the body thickness ($T_{bd}$) <5nm condition.

• 대한기계학회논문집A
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• 제24권9호
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• pp.2167-2173
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• 2000

The HANARO (High-flux Advanced Neutron Application Reactor) has operated since 1995. The Cold Neutron(CN) hole was implanted in the reflector tank from the design stage. Before a vacuum chamber and a moderator cell for the cold neutron source are installed into the CN hole, it is necessary to measure the exact size of the inside diameter and thickness of the CN hole to prevent the interference problem. Due to inaccessibility and high radiation field in the CN hole, a mechanical measurement method is not permitted. The immersion ultrasonic technique is considered as the best method to measure the thickness and the diameter. The 4 axis manipulator of the 2 channel of a sensor module was fabricated. The transducer of 10 MHz results in 0.03 nun of resolution. The inside diameter and thickness for 550 points of the CN hole were measured using 2 channel ultrasonic sensors. The results showed that the thickness is in the range of 13-6.7 mm and inside diameter is in the range of o 156-165. These data will be a good reference in the design of a cold neutron source facility.