• 한국재료학회지
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• 제21권6호
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• pp.309-313
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• 2011

The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and $PdCl_2$ solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 $nF/cm^2$, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of $10^4{\mu}A$.

• 한국정보통신학회논문지
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• 제8권4호
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• pp.821-825
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• 2004

본 연구는 에치스토퍼를 기존의 방식과 다르게 적용하여 수소화 된 비정질 실리콘 박막 트랜지스터의 제조공정을 단순화하고, 박막 트랜지스터의 게이트와 소오스-드레인간의 기생용량을 줄인다. 본 연구의 수소화 된 비정질 실리콘 박막 트랜지스터는 Inverted Staggered 형태로 게이트 전극이 하부에 있다. 실험 방법은 게이트전극, 절연층 , 전도층, 에치스토퍼 및 포토레지스터층을 연속 증착한다. 스토퍼층을 게이트 전극의 패턴으로 남기고, 그 위에 n+a-Si：H 층 및 NPR(Negative Photo Resister)을 형성시킨다. 상부 게이트 전극과 반대의 패턴으로 NPR층을 패터닝하여 그것을 마스크로 상부 n+a-Si：H 층을 식각하고, 남아있는 NPR층을 제거한다. 그 위에 Cr층을 증착한 후 패터닝하여 소오스-드레인 전극을 위한 Cr층을 형성시켜 박막 트랜지스터를 제조한다. 이렇게 제조하면 기존의 박막 트랜지스터에 비하여 특성은 같고, 제조공정은 줄어들며, 또한 게이트와 소오스-드레인간의 기생용량이 줄어들어 동작속도를 개선시킬 수 있다.

• 센서학회지
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• 제2권1호
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• pp.95-99
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• 1993

영상 센서를 위한 비정질 실리콘 박막트랜지스터 (a-Si : HTFT)를 제작하고 그 동작 특성 을 조사하였다. 게이트 절연막으로는 비정질 실리콘 질화막(a-SiN : H)을 증착하였으며 소오스와 드레인 영역에서의 저항성 접합을 위해 $n^{+}$ 형 비정질 실리콘($n^{+}$-a-Si : H)을 증착하였다. 이 때 a-SiN : H막과 a-Si : H막의 두께는 각각 $2000{\AA}$, $n^{+}$-a-Si : H막의 두께는 $500{\AA}$이었다. 또한 a-Si : H TFT의 채널길이와 채널폭은 각각 $50{\mu}m$와 $1000{\mu}m$였다. 본 연구에서 제작한 a-Si : H TFT의 ON/OFF 전류비는 $10^{5}$, 문턱전압은 6.3 V 그리고 전계효과 이동도는 $0.15cm^{2}/V{\cdot}s$로 나타났다.

• 한국주조공학회지
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• 제22권3호
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• pp.109-113
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• 2002

A good fluidity of high strength Al-alloys is required to cast thin wall castings needed to reduce the weight of cast parts. The fluidity, measured as the length to which the metal flows in a standard channel, is affected by many factors, such as the pouring temperature, solidification type of the alloy, the channel thickness, melt head, mold materials and temperature, coating etc. Therefore the experimentally measured fluidity scatters very much and makes it difficult to estimate the fluidity of a melt with a few measurements. The effect of Ti content and grain refinement on the fluidity of high strength aluminum alloy was investigated with a test casting with 8 thin flow channels to reduce the scattering of the fluidity results. The fluidity of Al-4.8%Cu-0.6%Mn Al-6.2%Zn-1.6%Mg-1.0%Cu and well-known commercial aluminum alloy, A356 was tested. Initial content of Ti was varied from 0 to 0.2wt% and Al-5Ti-B master alloy was added for grain refinement. The flow length varied linearly with superheat. By adding Ti and Al-5Ti-B, the fluidity increased. The grain size decreased by adding grain refiner at the same time. The fluidity depended on the degree of grain refinement. The fluidity of the alloy solidifying in mushy type is improved by grain refinement, because grain refinement increases the solid fraction at the time of flow stoppage.

• 한국정보통신학회논문지
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• 제17권1호
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• pp.145-150
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• 2013

본 연구에서는 차세대 나노소자인 DGMOSFET에 대하여 문턱전압 이하영역에서 발생하는 단채널 효과 중 문턱전압 및 드레인유도장벽감소의 변화를 스켈링 이론에 따라 분석하였다. 포아송방정식의 분석학적 해를 구하기 위하여 전하분포함수에 대하여 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였으며 이때 가우시안 함수의 변수인 이온주입범위 및 분포편차 그리고 소자 파라미터인 채널의 두께, 도핑농도 등에 대하여 문턱전압 특성의 변화를 관찰하였다. 본 연구의 모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 문턱전압이하 특성을 분석하였다. 분석결과 스켈링 이론 적용 시 문턱전압 및 드레인유도장벽감소 현상이 변화하였으며 변화 정도는 소자파라미터에 따라 변화한다는 것을 관찰하였다.

• Design & Manufacturing
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• 제17권3호
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• pp.8-14
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• 2023

In this study, basic research was conducted on manufacturing technology of thick-walled light guide a component that controls the light source of automobile lamps. As a preliminary study for manufacturing the final injection molded parts, a model for analyzing the influence of micro patterns on light guides is presented. The optical characteristics of the light guide were analyzed according to the change of the curvature radius of the micro-optical pattern, and the injection molding characteristics of the light guide according to the change of injection molding conditions were analytically evaluated. It was confirmed that the luminance uniformity improves as the R value decreases for changes in the micro-pattern R value, but it was confirmed that there are technical limitations in actual injection mold core processing and high-replication injection molding. Injection molding analysis showed that cooling channel design is very important compared to general injection molding due to thick-wall characteristics and thickness variation. It was also confirmed that the cooling channel has a great influence on the cycle time and birefringence result due to residual stress. As a result of analyzing the influence of filling time, holding condition, and cooling on shrinkage, it was found that the cooling water temperature has a significant effect on the shrinkage of ultra-fine light guide parts, and the holding condition also has a significant effect.

• Steel and Composite Structures
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• 제35권5호
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• pp.611-625
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• 2020

Experimental investigation and finite element analysis of corroded cold-formed steel (CFS) columns are presented. 11 tensile coupon specimens and 6 stub columns of corroded CFS that had a channel section of C160x60x20 were subjected to monotonic tensile tests and axial compression tests, respectively. The degradation laws of the mechanical properties of the tensile coupon specimens and stub columns were analysed. An appropriate finite element model for the corroded CFS columns was proposed and the influence of local corrosion on the stability performance of the columns was studied by finite element analysis. Finally, the axial capacity of the experimental results was compared with the predictions obtained from the existing design specifications. The results indicated that with an increasing average thickness loss ratio, the ultimate strength, elastic modulus and yield strength decreased for the tensile coupon specimens. Local buckling deformation was not noticeable until the load reached about 90% of the ultimate load for the non-corroded columns, while local buckling deformation was observed when the load was only 40% of the ultimate load for the corroded columns. The maximum reduction of the ultimate load and critical buckling load was 57% and 81.7%, respectively, compared to those values for the non-corroded columns. The ultimate load of the columns with web thickness reduced by 2 mm was 53% lower than that of the non-corroded columns, which indicates that web corrosion most significantly affects the bearing capacity of the columns with localized corrosion. The results predicted using the design specifications of MOHURD were more accurate than those predicted using the design specifications of AISI.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.194.1-194.1
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• 2015

Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• 한국강구조학회 논문집
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• 제21권5호
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• pp.515-526
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• 2009

콘크리트 충전강관에 사용되는 강관의 제작법은 재단된 4장의 플레이트를 모서리에서 용접하는 일반강관 제작법과, ㄷ형으로 절곡성형과정을 거쳐 2-Seam으로 용접하는 제작방법, 그리고 원형강관을 압축하여 4각형태로 만드는 방법등이 일반적으로 사용되며, 강관제작에 사용되는 용접방법과 용접량의 선택은 강관 제작비용에 큰 부분을 차지하고 있다. 새로운 제작형식으로 개발된 각형강관은 4장의 플레이트를 ㄱ형으로 절곡성형한 후 강관 폭의 중앙에서 4-Seam Flare 용접하는 방식이다. 본 연구에서는 새로운 제작형식의 CFT 각형 기둥에 대하여 용접량 평가를 위한 실험방법을 제시하고, 강관 제작법, 강관두께 및 용접량을 변수로 총 6개의 실험체를 제작하여 구조실험 및 해석을 수행하여 강관내부의 수압에 따른 강관의 거동을 평가하였다.