• Magazine of the Korean Society of Agricultural Engineers
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• v.15 no.1
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• pp.2853-2877
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• 1973

Models of cross-sections and channels were made in order to measure seepage losses. Cross-sections were made of sand, sandy clay loam and loam, their thicknesses being 30cm and 40cm, respectively. Flow depths kept in the cross-sections were 4cm, 6cm, 8cm and 10cm. Straight and curved channel models were provided so as to measure seepage losses, when constant water depths maintained at the heads of the channels were 7.3cm and 5.7cm, respectively. The results obtained in this experiment are presented as follows: 1) A cumulative seepage loss per unit length at a point in the channel varies in accordance with time and flow depth. The general equation of cumulative seepage loss may be as follows(Ref. to Table V.25): $$q_{cum}=\int_{o}^aq(a)dt+\int_a^bq(b)dt+\int_b^tq(c)dt$$ 2) In case that the variation of water depth through the channel is slight, the total seepage loss may be computed by applying the following general equation: $$\={q}_{cum}{\cdot}x=\int_o^tq_{cum}\frac{{\partial}x}{{\partial}t}dt$$ 3) Because seepage loss varies considerably according to water depth in case that the variation of flow depth through the channel is great, seepage loss should be computed by taking account of the change of flow depth. 4) The relation between time and traveling distance of water flow may be presented as the following general equation(Ref. to Table V.29): $$x=pt^r$$ 5) The ratios of the seepage losses of the straight channel to the curved channel are 1:1.03 for a flow depth of 7.3cm and 1:1.068 for that of 5.7cm. 6) The ratios of the seepage losses occurring through the bottom to those through the inclined plane in the channel cross-section are 1:2.24 for a water depth of 8cm and 1:2.47 for a depth of 10cm in case that soil-layer is 30cm in thickness. Similarly, those ratios are 1:2.62 and 1:2.93 in case of a soil-layer thickness of 40cm(Ref. to Table V.5).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.26.1-26.1
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• 2007

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.2
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• pp.1-6
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• 1983

The reduction of threshold voltage and punchthrough voltage of short channel MOS transistors has been measured experimentally with silicon gate NMOS transistors. The effects of the gate oxide thickness and substrate doping concentration on the threshold voltage and punch-through voltage have also been measured with sample devices with boron implantation and gate oxide thickness of 50 nm and 70 nm. Hot electron emission has been measured by floating gate method for the samples with 3 ${\mu}{\textrm}{m}$ channel length. It has been concluded from this measurement that hot electron emission is not significant for the channel length of 3${\mu}{\textrm}{m}$.

• Proceedings of the KSME Conference
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• 2001.06c
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• pp.47-52
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• 2001

Micro-injection molding and microfluidic devices with the help of MEMS technologies including the LIGA process are expected to play important roles in. micro-system industries, in particular the bioapplication industry, in the near future. Understanding fluid flows in micro-channels is important since micro-channels are typical geometry in various microfluidic devices and mold inserts for micro-injection molding. In the present study, both experimental and numerical studies have been carried out to understand the detailed flow phenomena in micro-channel filling process. Three sets of micro-channels of different thickness were fabricated and a flow visualization system was also developed to observe the filling flow into the micro-channels. Experimental flow observations were extensively made to find the effects of channel width and thickness, and effects of surface tension and volume flow rate and so on. And a numerical analysis system has been developed to simulate the filling flow into micro-channels with the surface tension effect taken into account. Discussed are the flow visualization experimental observations along with the predictability of the numerical analysis system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.887-890
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• 2005

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin updoped Si channel for SCEs control, are being validated for sub-20nm scaling, A channel effects such as the subthreshold swing(SS), and the threshold voltage roll-off(${\Delta}V_{th}$). The propsed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2643-2648
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• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• Design & Manufacturing
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• v.16 no.3
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• pp.58-65
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• 2022

Micro-fluidic chip has been fabricated by lithography process on silicon or glass wafer, casting using PDMS, injection molding of thermoplastics or 3D printing, etc. Among these processes, 3D printing can fabricate micro-fluidic chip directly from the design without master or template for fluidic channel fabricated previously. Due to this direct printing, 3D printing provides very fast and economical method for prototyping micro-fluidic chip comparing to conventional fabrication process such as lithography, PDMS casting or injection molding. Although 3D printing is now used more extensively due to this fast and cheap process done automatically by single printing machine, there are some issues on accuracy or surface characteristics, etc. The accuracy of the shape and size of the micro-channel is limited by the resolution of the printing and printing direction or layering direction in case of SLM type of 3D printing using UV curable resin. In this study, the printing direction and thickness of each printing layer are investigated to see the effect on the size, shape and surface of the micro-channel. A set of micro-channels with different size was designed and arrayed orthogonal. Micro-fluidic chips are 3D printed in different directions to the micro-channel, orthogonal, parallel, or skewed. The shape of the cross-section of the micro-channel and the surface of the micro-channel are photographed using optical microscopy. From a series of experiments, an optimal printing direction and process conditions are investigated for 3D printing of micro-fluidic chip.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.457-458
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• 2014

In this paper, quantum mechanical simulations of the double-gate ultra-thin body (DG-UTB) MOSFETs are performed according to the International Technology Roadmap of Semiconductors (ITRS) specifications planned for 2020, to devise the way for on-current ($I_{on}$) improvement. We have employed non-equilibrium Green's function (NEGF) approach and solved the self-consistent equations based on the parabolic effective mass theory [1]. Our study shows that the [100]/<001> Ge and GaSb channel devices have higher $I_{on}$ than Si channel devices under the body thickness ($T_{bd}$) <5nm condition.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.9 s.180
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• pp.2167-2173
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• 2000

The HANARO (High-flux Advanced Neutron Application Reactor) has operated since 1995. The Cold Neutron(CN) hole was implanted in the reflector tank from the design stage. Before a vacuum chamber and a moderator cell for the cold neutron source are installed into the CN hole, it is necessary to measure the exact size of the inside diameter and thickness of the CN hole to prevent the interference problem. Due to inaccessibility and high radiation field in the CN hole, a mechanical measurement method is not permitted. The immersion ultrasonic technique is considered as the best method to measure the thickness and the diameter. The 4 axis manipulator of the 2 channel of a sensor module was fabricated. The transducer of 10 MHz results in 0.03 nun of resolution. The inside diameter and thickness for 550 points of the CN hole were measured using 2 channel ultrasonic sensors. The results showed that the thickness is in the range of 13-6.7 mm and inside diameter is in the range of o 156-165. These data will be a good reference in the design of a cold neutron source facility.