• Korean Journal of Materials Research
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• v.21 no.6
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• pp.309-313
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• 2011

The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and $PdCl_2$ solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 $nF/cm^2$, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of $10^4{\mu}A$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.95-99
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• 1993

a-Si : H TFTs for image sensor have been fabricated and their operational characteristics have been investigated. Hydrogenated amorphous silicon nitride(a-SiN : H) films were used for the gate insulator and $n^{+}$-a-Si : H films were depostied for the source and drain contact. The thicknesses of a-SiN : H and a-Si : H films were $2000{\AA}$, respectively and the thickness of $n^{+}$-a-Si : H film was $500{\AA}$. Also the channel length and channel width of a-Si : H TFTs were $50{\mu}m$ and $1000{\mu}m$, respectively. The ON/OFF current ratio, threshold voltage, and field effect mobility of fabricated a-Si : H TFTs were $10^{5}$, 6.3 V, and $0.15cm^{2}/V{\cdot}s$, respectively.

• Journal of Korea Foundry Society
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• v.22 no.3
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• pp.109-113
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• 2002

A good fluidity of high strength Al-alloys is required to cast thin wall castings needed to reduce the weight of cast parts. The fluidity, measured as the length to which the metal flows in a standard channel, is affected by many factors, such as the pouring temperature, solidification type of the alloy, the channel thickness, melt head, mold materials and temperature, coating etc. Therefore the experimentally measured fluidity scatters very much and makes it difficult to estimate the fluidity of a melt with a few measurements. The effect of Ti content and grain refinement on the fluidity of high strength aluminum alloy was investigated with a test casting with 8 thin flow channels to reduce the scattering of the fluidity results. The fluidity of Al-4.8%Cu-0.6%Mn Al-6.2%Zn-1.6%Mg-1.0%Cu and well-known commercial aluminum alloy, A356 was tested. Initial content of Ti was varied from 0 to 0.2wt% and Al-5Ti-B master alloy was added for grain refinement. The flow length varied linearly with superheat. By adding Ti and Al-5Ti-B, the fluidity increased. The grain size decreased by adding grain refiner at the same time. The fluidity depended on the degree of grain refinement. The fluidity of the alloy solidifying in mushy type is improved by grain refinement, because grain refinement increases the solid fraction at the time of flow stoppage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Design & Manufacturing
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• v.17 no.3
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• pp.8-14
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• 2023

In this study, basic research was conducted on manufacturing technology of thick-walled light guide a component that controls the light source of automobile lamps. As a preliminary study for manufacturing the final injection molded parts, a model for analyzing the influence of micro patterns on light guides is presented. The optical characteristics of the light guide were analyzed according to the change of the curvature radius of the micro-optical pattern, and the injection molding characteristics of the light guide according to the change of injection molding conditions were analytically evaluated. It was confirmed that the luminance uniformity improves as the R value decreases for changes in the micro-pattern R value, but it was confirmed that there are technical limitations in actual injection mold core processing and high-replication injection molding. Injection molding analysis showed that cooling channel design is very important compared to general injection molding due to thick-wall characteristics and thickness variation. It was also confirmed that the cooling channel has a great influence on the cycle time and birefringence result due to residual stress. As a result of analyzing the influence of filling time, holding condition, and cooling on shrinkage, it was found that the cooling water temperature has a significant effect on the shrinkage of ultra-fine light guide parts, and the holding condition also has a significant effect.

• Steel and Composite Structures
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• v.35 no.5
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• pp.611-625
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• 2020

Experimental investigation and finite element analysis of corroded cold-formed steel (CFS) columns are presented. 11 tensile coupon specimens and 6 stub columns of corroded CFS that had a channel section of C160x60x20 were subjected to monotonic tensile tests and axial compression tests, respectively. The degradation laws of the mechanical properties of the tensile coupon specimens and stub columns were analysed. An appropriate finite element model for the corroded CFS columns was proposed and the influence of local corrosion on the stability performance of the columns was studied by finite element analysis. Finally, the axial capacity of the experimental results was compared with the predictions obtained from the existing design specifications. The results indicated that with an increasing average thickness loss ratio, the ultimate strength, elastic modulus and yield strength decreased for the tensile coupon specimens. Local buckling deformation was not noticeable until the load reached about 90% of the ultimate load for the non-corroded columns, while local buckling deformation was observed when the load was only 40% of the ultimate load for the corroded columns. The maximum reduction of the ultimate load and critical buckling load was 57% and 81.7%, respectively, compared to those values for the non-corroded columns. The ultimate load of the columns with web thickness reduced by 2 mm was 53% lower than that of the non-corroded columns, which indicates that web corrosion most significantly affects the bearing capacity of the columns with localized corrosion. The results predicted using the design specifications of MOHURD were more accurate than those predicted using the design specifications of AISI.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.194.1-194.1
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• 2015

Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Journal of Korean Society of Steel Construction
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• v.21 no.5
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• pp.515-526
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• 2009

There are three main production processes in the manufacture of concrete-filled square steel columns. The first process is known as the 'box-type process' or 'four-seam method,' wherein four beams are welded together at the seams. The second is the 'cold-forming process' or 'two-seam method,' wherein the seams of two channel beams are welded together. The third is the 'pressing process' or 'one-seam method,' wherein a circular column is pressed until it becomes a square column. In calculating the production cost for the making of a steel tube, it is very important to consider the welding process to be used and the desiredthickness of the steel tube, such as a square column that was developed under a new method, formed through the four-seam flare welding method at the center of the steel column width, following the L-shape formation. Certain tests were suggested in this study to evaluate the welding amount of concrete-filled square steel columns. With the parameters of the production method of a square steel column, the thickness of the steel square columns, and the welding amount, six specimens were produced. A structural test and finite-element analysis were conducted to assess the behavior of the steel column according to the water pressure inside the steel columns.