• ETRI Journal
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• v.11 no.2
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• pp.109-119
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• 1989

Based on the 2-dimensional charge-control simulation[4], a purely analytical model for MODFET's is proposed. In this model, proper treatment of the diffusion effect in the 2-DEG transport due to the gradual channel opening along the 2-DEG channel was made to explain the enhanced mobility and increased thershold voltage. The channel thickness and gate capacitance are experssed as functions of gate vlotage including subthreshold characteristics of the MODFET's analytically. By introducing the finite channel opening and an effective channel-length modulation, the slope of the saturation region of the I-V curves was modeled. The smooth transition of the I-V curves from linear-to-saturation region of the I-V curves was possible using the continuous Troffimenkoff-type of field-dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transtition section forming between the GCA and the saturated section. This factor removes the large discrepanicies in the saturation region fo the I-V curves presicted by existing 1-dimensional models. The fitting parameters chosen in our model were found to be predictable and vary over relatively small range of values.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2544-2547
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• 2008

A micro channel heat sink has been studied and optimized for mixed pressure driven and electroosmotic flows through three-dimensional numerical analysis. The effects of ionic concentration represented by zeta potential and Debye thickness are studied with the various steps of externally applied electric potential. Optimization of the micro channel heat sink has been performed considering two design variables related to the micro channel width, depth and fin width. The surrogate-based optimization is performed using a search algorithm taking overall thermal resistance as objective function. The thermal resistance is found to be more sensitive to channel width-to-depth ratio than fin width-to-depth of channel ratio.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.45-49
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• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.

• Proceedings of the Korea Institute of Convergence Signal Processing
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• 2003.06a
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• pp.110-113
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• 2003

In this paper, the multi-channel high speed data acquisition system is implemented. This high speed signal processing system for 3-D image display is applicable to the manipulation of a medical image processing, multimedia data and various fields of digital image processing. In order to convert the analog signal into digital one, A/D conversion circuit is designed. PCI interface method is designed and implemented, which is capable of transmission a large amount of data to computer. In order to, especially, channel extendibility of images acquisition, bus communication method is selected. By using this bus method, we can interface each module effectively. In this paper, 32-channel A/D conversion and PCI interface system for 3-dimensional and real-time display of the retina image is developed. The 32-channel image acquisition system and high speed data transmission system developed in this paper is applicable to not only medical image processing as 3-D representation of retina image but also various fields of industrial image processing in which the multi-point realtime image acquisition system is needed.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.6_1
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• pp.683-691
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• 2021

Bipolar plates with channel width of 0.5 mm, 0.4 mm, and 0.3 mm respectively were printed using a 3D printer. The shape of three b ipolar plates was rectangular, the channel depth was 0.5 mm, and the thickness of base was 0.5 mm. The bipolar plate with channel width of 0.5 mm had 45 channels, and their active area was 44.5 mm × 50 mm. The bipolar plate with channel width of 0.4 mm had 57 channels and its active area was 45.2 mm × 50 mm, and the bipolar plate with channel width of 0.3 mm had 75 channels and its active area was 44.7 mm × 50 mm. The bipolar plates were printed using PLA filament. The cross-sectional lengths of the bipolar plates with channel widths of 0.5 mm and 0.4 mm were identical by 96% of the designed cross-sectional length. Whereas the bipolar plate with a channel length of 0.3 mm had a large difference of 25% from the designed cross-sectional length.

• Journal of IKEEE
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• v.22 no.1
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• pp.74-79
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• 2018

We analyzed the relationship between center potential and subthreshold swing (SS) of Junctionless Cylindrical Surrounding Gate (JLCSG) and Junctionless Double Gate (JLDG) MOSFET. The SS was obtained using the analytical potential distribution and the center potential, and SSs were compared and investigated according to the change of channel dimension. As a result, we observed that the change in central potential distribution directly affects the SS. As the channel thickness and oxide thickness increased, the SS increased more sensitively in JLDG. Therefore, it was found that JLCSG structure is more effective to reduce the short channel effect of the nano MOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2267-2272
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• 2012

This study has presented the analysis of subthreshold swings based on scaling theory for double gate MOSFET. To solve the analytical potential distribution of Poisson's equation, we use Gaussian function to charge distribution. The scaling theory has been used to analyze short channel effect such as subthreshold swing degradation. These scaling factors for gate length, oxide thickness and channel thickness has been modified with the general scaling theory to include effects of double gates. We know subthreshold swing degradation is rapidly reduced when scaling factor of gate length is half of general scaling factor, and parameters such as projected range and standard projected deviation have greatly influenced on subthreshold swings.

• Proceedings of the KSME Conference
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• 2000.11b
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• pp.591-596
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• 2000

Flow through compliant tubes with linear taper in wall thickness is numerically simulated by finite element analysis. Two models are examined: a planar two-dimensional channel, and an axisymmetric tube. For verification of the numerical method, flow through a compliant stenotic vessel is simulated and compared to existing experimental data. Computational results for an axisymmetric tube show that as cross-sectional area falls with a reduction in downstream pressure, flow rate increases and reaches a maximum when the speed index (mean velocity divided by wave speed) is near unity at the point of minimum cross-section area, indicative of wave speed flow limitation or "choking" (flow speed equals wave speed) in previous one-dimensional studies. For further reductions in downstream pressure, flow rate decreases. Cross-sectional narrowing is significant but localized. When the ratio of downstream-to-upstream wall thickness is ${\le}$ 2 the area throat is located near the downstream end; as wall taper is increased to ${\ge}$ 3 the constriction moves to the upstream end of the tube. In the planar two-dimensional channel, area reduction and flow limitation are also observed when outlet pressure is decreased. In contrast to the axisymmetric case, however, the elastic wall in the two-dimensional channel forms a smooth concave surface with the area throat located near the mid-point of the elastic wall. Though flow rate reaches a maximum and then falls, the flow does not appear to be choked.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.861-864
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• 2006

In this paper conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to obtain the analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper is compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gateoxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.41-45
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• 2012

We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.