• Journal of information and communication convergence engineering
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• 제9권5호
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• pp.583-586
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• 2011

In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length $L_g$ is varied from 30nm to 100nm, and channel thickness $t_{si}$ from 15 to 20nm according to channel length, and oxide thickness 5nm to investigate subthreshold swing. The doping of channel is fixed with $10^{16}cm^{-3}$ p-type. The results show good agreement with numerical simulations, confirming this model.

• 경영과학
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• 제17권3호
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• pp.73-95
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• 2000

In Korea, the distribution channel for agricultural products is notorious for its complexity and ineffectiveness. In this sense, the Agricultural Cooperative has tried to clarify the distribution channel and reduce its length. However, there still exist much room for improvements. The Internet shopping mall specific for agricultural product, therefore, is drawing much attention because it can reduce the length of distribution channel drastically and improve effectiveness from the distribution perspective. To test the validity of such Internet-driven shopping mall, we gathered questionnaire data from the Internet based Hannaro Shopping Mall which is run directly by the Agricultural Cooperative. We performed experiments respectively for the two groups of operating personnel and consumers. Experimental results showed that several important factors can be identified which are significant statistically and deemed to have meaningful relationship with performance variables. Our results also showed that the Internet shopping mall has a great potential for improving the effectiveness of the distribution channel of the agricultural products.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집B
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• pp.545-550
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• 2001

A two-dimensional laminar flow through a channel, on which a couple of symmetric vertical fins are attached, is investigated. The stokes flow for this channel flow is investigated analytically and laminar flow numerically. For analytic solution, the method of eigen function expansion and collocation method are employed. For numerical solution, finite difference method(FDM) is used to obtain vorticity and stream function. From the results, streamline patterns are shown and the pressure drop due to the attached fins is calculated, which depends on the length of fins and Reynolds number. While $Re, streamline pattern is symmetric, a pair of additional asymmetric solutions appear for $Re>Re_c$, where the critical Reynolds number $Re_c$ depends on the length of the fin.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.145-148
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• 2001

In this paper, polycrystalline silicon thin film transistor using by Solid Phase Crystallization(SPC) were fabricated, and these devices were measured and analyzed the electrical output and transfer characteristics along to DC voltage stress. The transfer characteristics of polycrystalline silicon thin film transistor depended on drain and gate voltages. Threshold voltage is high with long channel length and narrow channel width. And output characteristics of polycrystalline silicon thin film transistor flowed abruptly much higher drain current. The devices induced electrical stress are decreased drain current. At last, field effect mobility is the faster as channel length is high and channel width is narrow.

• Journal of Mechanical Science and Technology
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• 제17권6호
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• pp.879-887
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• 2003

The flow in a parallel walled test channel, when obstructed with a geometry at the entrance, can be forward, reverse and stagnant depending on the position of the obstruction. This interesting flow phenomenon has potential benefit in the control of energy and various flows in the process industry In this experiment, the flat plate obstruction geometry was used as an obstruction at the entry of the test channel. The parameters that influence the flow inside and around the test channel were the gap (g) between the test channel and the obstruction geometry, the length (L) of the test channel and the Reynolds number (Re). The effect of the gap to channel width ratio (g/w) on the magnitude of the velocity ratio (V$\_$i/ / V$\_$o/ : velocity inside/ velocity outside the test channel) was investigated for a range of Reynolds numbers. The maximum reverse flow observed was nearly 20% to 60% of the outside velocity for Reynolds number ranging from 1000 to 9000 at g/w ratio of 1.5. The maximum forward velocity inside the test channel was found 80% of the outside velocity at higher g/w ratio of 8. The effect of the test channel length on the velocity ratio was investigated for different g/w ratios and a fixed Reynolds number of 4000. The influence of the Reynolds number on the velocity ratio is also discussed and presented for different gap to width ratio (g/w). The flow visualisation photographs showing fluid motion inside and around the test channel are also presented and discussed.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 하계학술발표회
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• pp.162-163
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• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)

• 전기전자학회논문지
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• 제3권1호
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• pp.118-125
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• 1999

게이트 아래의 기판과 쏘오스/드레인의 접합부분 사이의 길이로 정의되는 LDD MOSFET의 metallurgical 채널 길이를 커패시턴스 측정을 이용하여 결정할 수 있는 방법을 제안하였다. 전체의 게이트 면적이 동일한 평판 모양과 손가락 모양의 LDD MOSFET 게이트 테스트 패턴의 커패시턴스를 측정하였다. 각 테스트 패턴의 쏘오스/드레인과 기판의 전압을 접지시키고 게이트의 전압을 변화시키면서 커페시턴스를 측정하였다. 두 테스트 패턴의 측정치의 차이를 그려서 최대점이 나타나는 점의 값를 간단한 수식에 대입하여 metallurgical 채널 길이를 구하였다. 이차원적 소자 시뮬레이터를 사용하여 수치해석적 모의 실험을 함으로써 제안한 방법을 증명하였다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제15권8호
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• pp.2923-2943
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• 2021

The double helix structure of DNA makes it diverse, stable and can store information with high density, and these characteristics are consistent with the requirements of molecular communication for transport carriers. In this paper, a specific structure of molecular communication system based on DNA length coding is proposed. Transmitter (Tx) adopts the multi-layer golden foil design to control the release of DNA molecules of different lengths accurately, and receiver (Rx) adopts an effective and sensitive design of nanopore, and the biological information can be converted to the electric signal at Rx. The effect of some key factors, e.g., the length of time slot, transmission distance, the number of releasing molecules, the priori probability, on channel capacity is demonstrated exhaustively. Moreover, we also compare the transmission capacity of DNA-based molecular communication (DNA-MC) system and concentration-based molecular communication (MC) system under the same parameter setting, and the peak value of capacity of DNA-MC system can achieve 0.08 bps, while the capacity of MC system remains 0.025 bps. The simulation results show that DNA-MC system has obvious advantages over MC system in saving molecular resources and improving transmission stability.

• 대한기계학회논문집B
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• 제33권4호
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• pp.264-271
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• 2009

Characteristics of a counter flowing diffusion flame, which is formulated by an oppositely-injected methane-jet flow in a narrow channel of a uniform air flow. The location of the flame fronts and the flame lengths were compared by changing the flow rates of fuel. To distinguish the effects of the narrow channel on the diffusion flame, a numerical simulation for an ideal two-dimensional flame was conducted. Overall trends of the flame behavior were similar in both numerical and experimental results. With the increase of the ratio of jet velocity to air velocity flame front moved farther upstream. It is thought that the flow re-direction in the channel suppresses fuel momentum more significantly due to the higher temperature and increased viscosity of burned gas. Actual flames in a narrow channel suffer heat loss to the ambient and it has finite length of diffusion flame in contrast to the numerical results of infinite flame length. Thus a convective heat loss was additionally employed in numerical simulation and closer results were obtained. These results can be used as basic data in development of a small combustor of a nonpremixed flame.

• 전자공학회논문지T
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• 제36T권2호
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• pp.8-13
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• 1999

본 논문은 MOSFET에서 2차원적 전위분포가 채널방향을 따라 준-선형적으로 변한다는 GCA(Gradual Channel Approximation)를 진성영역에서 수직 공핍층 폭이 준-선형적으로 변한다는 가정으로 대치하여 단채널 MOSFET에서도 적용 가능한 문턱전압의 해석적 모형을 제안하였다. 제안된 문턱전압 표현식은 유효 채널길이, 드레인전압, 기판(substrate) 바이어스 전압, 기판 도핑농도, oxide 두께 등에 대한 의존성을 통합적으로 나타내었으며, 계산된 결과는 BSIM3v3의 결과와 유사한 경향을 보이고 있다.