• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Journal of the Korean Society of Propulsion Engineers
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• v.21 no.3
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• pp.49-55
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• 2017

In this study, gas turbine engine inlet duct was designed to satisfy uniform flow at aerodynamic interface plane (AIP). Haack-series was selected as nose cone profile and duct outer radius($r_o$) was designed to satisfy to match with area change rate between the nose cone and outer duct wall by the 1-D sizing. The design object of the inlet duct wall profile which has the gradual area change rate was uniform Mach number in the core flow region and minimum boundary later thickness at the both inner nose wall and outer duct wall. The flow characteristics inside the inlet duct was evaluated using CFD. The static pressure distribution at the AIP showed uniform pattern within 0.16%. Based on Mach number profile, the boundary layer thickness was 2% of channel height. Kiel temperature rake location was decided less than 100 mm in front of nose cone where the Mach number is less than 0.1 in order to maximize the temperature probe recovery rate.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.9 no.2
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• pp.86-96
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• 1997

In order to investigate the formation of a shallow water front and its relation to water quality distributions, oceanographic measurements were made, and the numerical computations of the Simpson-Hunter stratification parameter log(H/U$^3$) were performed. It is shown from satellite image and hydrographic data that the shallow water front is formed near the northern Kaduk channel, and the stratification parameter log(H/U$^3$) near the front is in a range of 2.0-2.5. Measured COD (Chemical Oxygen Demand) concentrations in offshore region of the front and in the western part of the bay are below 2.0 mg/1. whereas the concentrations in Masan Bay located in the northern inside of the frontal zone are high as 3.0-5.5 mg/1. COD concentrations decrease gradually from Masan Bay toward the offshore due to the dilution by strong water mixing. Anoxic and hypoxic water masses at the bottom layer in summcr occur in the western part of Chinhae Bay and in Masan Bay, and DO (Dissolved Oxygen) concentrations become low with increasing the stratification parameter. DO concentrations outside the front are more than about 4.0 mg/1, whereas the concentrations inside the front are low. The shallow water front plays a significant role for material transport from coastal area to oceanic area, and the frontal region seems to be important physical and chemical boundaries.

• 한국지구물리탐사학회:학술대회논문집
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• 1999.08a
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• pp.48-64
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• 1999

For quantitative evaluation of geotechnical engineering properties such as rippability and diggability, clear interpretation on the subsurface velocity structures should be preceded by figuring out top soil, weathered and soft rock layers, shape of basement, fracture zones, geologic boundary and etc. from the seismic refraction data. It is very important to set up suitable field parameters, which are the configuration of profile and its length, spacings of geophones and sources and topographic conditions, for increasing field data quality Geophone spacing of 3 to 5m is recommended in the land slope area for house land development and 5 to 10m in the tunnel site. In refraction tomography technique, the number of source points should be more than a half of available channel number of instrument, which can make topographic effect ignorable. Compared with core logging data, it is shown that the velocity range of the soil is less than 700m/s, weathered rock 700${\~}$1,200m/s, soft rock 1,200${\~}$1,800m/s. And the upper limit of P-wave velocity for rippability is estimated 1,200 to 1,800m/s in land slope area of gneiss. In case of tunnel site, it is recommended in tunnel design and construction to consider that tunnel is in contact with soft rock layer where three lineaments intersecting each other are recognized from the results of the other survey.

• Journal of KIISE:Information Networking
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• v.30 no.1
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• pp.75-81
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• 2003

User authentication, including confidentiality, integrity over untrusted networks, is an important part of security for systems that allow remote access. Using human-memorable Password for remote user authentication is not easy due to the low entropy of the password, which constrained by the memory of the user. This paper presents a new password authentication and key agreement protocol suitable for authenticating users and exchanging keys over an insecure channel. The new protocol resists the dictionary attack and offers perfect forward secrecy, which means that revealing the password to an attacher does not help him obtain the session keys of past sessions against future compromises. Additionally user passwords are stored in a form that is not plaintext-equivalent to the password itself, so an attacker who captures the password database cannot use it directly to compromise security and gain immediate access to the server. It does not have to resort to a PKI or trusted third party such as a key server or arbitrator So no keys and certificates stored on the users computer. Further desirable properties are to minimize setup time by keeping the number of flows and the computation time. This is very useful in application which secure password authentication is required such as home banking through web, SSL, SET, IPSEC, telnet, ftp, and user mobile situation.

• Geophysics and Geophysical Exploration
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• v.8 no.3
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• pp.201-206
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• 2005

Interpretation of high-resolution seismic profiles from the southeastern continental shelf of Korea reveals that the sedimentary deposits consist of seven seismic units formed during the late Quaternary. These units comprise lowstand, transgressive, and highstand systems tracts. The lowstand systems tract consists of a lowstand prograding wedge (SU1) and a mass flow deposit (SU2) including slumps and slides. The transgressive systems tract contains four seismic units: an ancient beach/shoreface deposit (SU3), a channel-fill deposit (SU4), a transgressive sand layer (SU5), and a transgressive sand ridge (SU6). The highstand systems tract consists of an inner-shelf mud deposit (SU7) derived from the Nakdong and Seomjin rivers during the last 6 ka when sea level was close to the present level.

• Journal of IKEEE
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• v.25 no.3
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• pp.501-505
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• 2021

In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with gate dielectrics of HfO₂ and the mixed layers of HfO₂ and Al₂O₃, and investigated the effect of gate dielectric on electrical characteristics of a-ITGZO TFTs. When only HfO₂ was used as the gate dielectric, the mobility and subthreshold swing (SS) were 32.3 cm²/Vs and 206 mV/dec. For the a-ITGZO TFTs with gate dielectric made of HfO₂ and Al₂O (2:1, 1:1), the mobilities and SS were 26.4 cm²/Vs (2:1), 16.8 cm²/Vs(1:1), 160 mV/dec (2:1) and 173 mV/dec (1:1). On the other hand, the hysteresis window shown in transfer curves of the a-ITGZO TFTs was lessened from 0.60 to 0.09 V by the increase of Al₂O₃ ratio in gate dielectric, indicating that the interface trap density between the gate dielectric and channel layer decreases due to Al₂O₃.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Journal of Wetlands Research
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• v.24 no.4
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• pp.320-330
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• 2022

The Hangang river estuary, which is a natural estuary without structures such as estuary barrage, is an ecological pathway connecting the sea and rivers. Accordingly, Hangang river estuary has various species, and there is very valuable. Sediment classification in Hangang river estuary is three-dimensionally and diversely is distributed. Sediment classification in Hangang river estuary is also sensitively changed according to various factors such as climate change and river development. It is typically cause to landform and to develop a compound cross section. In Janghang wetland, the plant success is remarkable according to the morphological change at river bed. The purpose of this study is to identify the mechanism of wetland formation based on the observation on-site. As a result of the observation, Janghang wetland where was artificially created, has been grown according to the river bed change based on the flow rate and the plant success. The viscous surface layer material(fine grains of wash rod properties), which is not the main material(sand) of the river bed, but sub-materials of river bed, jas been settled on the pioneer plants(bolboschoenus planiculmis, etc.). It is an important role in the growth of a compound cross section and a wetland. After the wetland developed to the compound cross section, it is observed that the pioneer plants are transferred to other plant species.

• Clean Technology
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• v.28 no.4
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• pp.323-330
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• 2022

Microfluidic paper-based analytical devices (μPADs) have recently been in the spotlight for their applicability in point-of-care diagnostics and environmental material detection. This study presents a double-sided printing method for fabricating 3D-μPADs, providing simple and cost effective metal ion detection. The design of the 3D-μPAD was made into an acryl stamp by laser cutting and then coating it with a thin layer of PDMS using the spin-coating method. This fabricated stamp was used to form the 3D structure of the hydrophobic barrier through a double-sided contact printing method. The fabrication of the 3D hydrophobic barrier within a single sheet was optimized by controlling the spin-coating rate, reagent ratio and contacting time. The optimal conditions were found by analyzing the area change of the PDMS hydrophobic barrier and hydrophilic channel using ink with chromatography paper. Using the fabricated 3D-μPAD under optimized conditions, Ni²⁺, Cu²⁺, Hg²⁺, and pH were detected at different concentrations and displayed with color intensity in grayscale for quantitative analysis using ImageJ. This study demonstrated that a 3D-μPAD biosensor can be applied to detect metal ions without special analysis equipment. This 3D-μPAD provides a highly portable and rapid on-site monitoring platform for detecting multiple heavy metal ions with extremely high repeatability, which is useful for resource-limited areas and developing countries.