• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.783-790
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• 2005

In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1105-1108
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• 2003

In this paper, we have fabricated the hydrogenated n-channel polysilicon thin film transistor (TFT) with LDD structure and have analyzed the hot carrier degradation characteristics by electrical stress. We have compared the threshold voltage (Vth), sub-threshold slope (S), and trans-conductance (Gm) for devices with LDD (Lightly Doped Drain) structure and non-LDD at same active sizes. We have analyzed the hot carrier effects by the hydrogenation in devices. As a analyzed results, the threshold voltage, sub-threshold slope for n-channel poly-si TFT were increased, trans-conductance was decreased. The effects of hydrogenation in n-channel poly-si TFT with LDD structure were shown the lower variations of characteristics than devices of the non-LDD structure with nomal process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.44-48
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• 2008

Hole mobility characteristics of two representative biaxially strained SiGe/Si structures with high Ge contents are studied, They are single channel ($Si/Si_{1-x}Ge_x/Si$ substrate) and dual channel ($Si/Si_{1-y}Ge_y/Si_{1-x}Ge_x/Si$ substrate), where the former consists of a relaxed SiGe buffer layer with 60 % Ge content and a tensile-strained Si layer on top, and for the latter, a compressively strained SiGe layer is inserted between two layers, Owing to the hole mobility performance between a relaxed SiGe film and a compressive-strained SiGe film in the single channel and the dual channel, the hole mobility behaviors of two structures with respect to the Si cap layer thickness shows the opposite trend, Hole mobility increases with thicker Si cap layer for single channel structure, whereas it decreases with thicker Si cap layer for dual channel. This hole mobility characteristics could be easily explained by a simple capacitance model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.5
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• pp.787-793
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• 2018

In this paper, we propose a new single carrier - frequency domain equalization (SC-FDE) structure to cope with narrow band interference. In the conventional SC-FDE structure, when a high-power narrow band interference exists, channel estimation and data recovery is difficult. To relieve from this problem, this paper proposes a new SC-FDE frame structure to enable frequency-domain channel estimation in the environments that exist narrow band interference. Specifically, in the conventional method, the channel estimation is performed in time-domain first and from that, the frequency-domain channel is obtained by Fourier transform. In contrast, we proposed a new SC-FDE structure to enable frequency-domain channel estimation directly from received signals without time-domain channel estimation. The receiver performance improvement is verified through computer simulation. According to the results, the proposed technique can detect the signal with less than 2 dB loss compared with jammer-free environments, while the conventional method does not communicate with each other.

• Journal of information and communication convergence engineering
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• v.9 no.1
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• pp.27-31
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• 2011

This paper describes the optimization of spectrum sensing in terms of the throughput of a cognitive radio (CR) system. Dealing with the optimization problem of spectrum sensing, this paper evaluates the throughput of a CR system by considering such situations as the penalty time of a channel search and incumbent user (IU) detection delay caused by a missed detection of an incumbent signal. Also, this paper suggests a serial channel search scheme as the search method for a vacant channel, and derives its mean channel search time by considering the penalty time due to the false alarm of a vacant channel search. The numerical results suggest the optimum sensing time of the channel search process using the derived mean channel search time of a serial channel search in the case of a sensing hardware structure with single radio frequency (RF) path. It also demonstrates that the average throughput is improved by two separate RF paths in spite of the hardware complexity of an RF receiver.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.3A
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• pp.291-303
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• 2006

In this paper, we analyze functional requirements of the IEEE 802.22 WRAN, and propose a downlink 프레임 structure satisfying the requirements. The proposed downlink 프레임 structure maximizes e transmission efficiency by adopting the cognative radio to assign the sub-channel by reflecting the channel environment of WRAN. We also calculate the signalling overhead for both downlink and uplink, and analyze the performances of time synchronization, frequency synchronization and cell identification based on the 프리앰블 in downlink and suggest the channel estimation method tough 프리앰블 or pilot. As a final result, e stationary beamforming (SBF) algorithm with dynamic channel allocation(DCA) is proposed. The proposed OFDMA downlink 프레임 structure with channel adaptive sub-channel allocation for cognitive radio applications is verified to meet the requirements of IEEE 802.22 WRAN, by computer simulations.

• Ecology and Resilient Infrastructure
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• v.2 no.1
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• pp.33-41
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• 2015

In this study, an optimal improvement method of stream channel structure is presented for the enhancement of fish habitat suitability by genetic algorithm. The correlation between fish habitat suitability and physical disturbance in stream is analyzed according to the changes of hydraulic characteristics by channel structure rehabilitation. Zacco koreanus which is an indicator fish of the soundness of aquatic ecosystem was selected as a restoration target species by investigating the community characteristics of fish fauna and river environments in Wonju stream. The habitat suitability is investigated by PHABSIM with the habitat suitability index of Zacco koreanus. Hydraulic analysis by HEC-RAS and physical disturbance evaluation in stream are carried out. The optimal channel width modified for the enhancement of fish habitat suitability is provided. The correlation analysis between habitat suitability and physical disturbance with the change of hydraulic characteristics by channel modification showed that the proper channel modification enhanced fish habitat suitability and mitigated physical disturbance in the stream. The improvement of physical disturbance score by the channel structure rehabilitation for the enhancement of fish habitat suitability was confirmed in this study.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.21-25
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

• Interaction and multiscale mechanics
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• v.6 no.2
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• pp.157-172
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• 2013

This paper presented an investigation of macromolecular suspension in a grooved channel by using the dissipative particle dynamics (DPD) with finitely extensible non-linear elastic (FENE) bead spring chains model. Before studying the movement and evolution of macromolecules, the DPD method was first validated by modeling the simple fluid flow in the grooved channel. For both simple fluid flow and macromolecular suspension, the flow fields were analyzed in detail. It is found that the structure of the grooved channel with sudden contraction and expansion strongly affects the velocity distribution. As the width of the channel reduces, the horizontal velocity increases simultaneously. Vortices can also be found at the top and bottom corners behind the contraction section. For macromolecular suspension, the macromolecular chains influence velocity and density distribution rather than the temperature and pressure. Macromolecules tend to drag simple fluid particles, reducing the velocity with density and velocity fluctuations. Particle trajectories and evolution of macromolecular conformation were investigated. The structure of the grooved channel with sudden contraction and expansion significantly influence the evolution of macromolecular conformation, while macromolecules display adaptivity to adjust their own conformation and angle to suit the structure so as to pass the channel smoothly.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.